NTF3055L108T3G
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onsemi NTF3055L108T3G

Manufacturer No:
NTF3055L108T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 3A SOT223
Delivery:
Payment:
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iso45001
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iso13485

Product Introduction

Overview

The NTF3055L108T3G is a power, N-Channel, logic level MOSFET produced by onsemi. This device is designed for low voltage, high speed switching applications and is available in the SOT-223 package. It is particularly suited for use in power supplies, converters, power motor controls, and bridge circuits. The NTF3055L108T3G is Pb-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

RatingSymbolValueUnit
Drain-to-Source VoltageVDSS60Vdc
Drain-to-Gate VoltageVDGR60Vdc
Gate-to-Source Voltage (Continuous)VGS±15Vdc
Gate-to-Source Voltage (Non-repetitive, tp ≤ 10 ms)VGS±20Vdc
Drain Current (Continuous @ TA = 25°C)ID3.0Adc
Drain Current (Continuous @ TA = 100°C)ID1.4Adc
Drain Current (Single Pulse, tp ≤ 10 μs)IDM9.0Apk
Total Power Dissipation @ TA = 25°CPD2.1Watts
Total Power Dissipation @ TA = 100°CPD1.3Watts
Derate above 25°C0.014W/°C
Operating and Storage Temperature RangeTJ, Tstg-55 to 175°C
Single Pulse Drain-to-Source Avalanche EnergyEAS74mJ
Thermal Resistance (Junction-to-Ambient)RθJA72.3°C/W
Maximum Lead Temperature for SolderingTL260°C

Key Features

  • Logic level gate drive for low voltage operation.
  • High speed switching capabilities.
  • Pb-free and RoHS compliant.
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
  • Low on-resistance (RDS(on)) of 120 mΩ at VGS = 5.0 V and ID = 1.5 A.
  • High drain current of up to 3.0 A.
  • High drain-to-source voltage rating of 60 V.
  • Low gate threshold voltage (VGS(th)) range of 1.0 to 4.6 V.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTF3055L108T3G? The maximum drain-to-source voltage is 60 Vdc.
  2. What is the continuous drain current at 25°C? The continuous drain current at 25°C is 3.0 Adc.
  3. Is the NTF3055L108T3G Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  4. What are the typical applications for this MOSFET? Typical applications include power supplies, converters, power motor controls, and bridge circuits.
  5. What is the thermal resistance (junction-to-ambient) of the NTF3055L108T3G? The thermal resistance (junction-to-ambient) is 72.3 °C/W.
  6. What is the maximum lead temperature for soldering? The maximum lead temperature for soldering is 260 °C.
  7. What is the gate threshold voltage range of the NTF3055L108T3G? The gate threshold voltage range is from 1.0 to 4.6 V.
  8. Is the NTF3055L108T3G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
  9. What is the on-resistance (RDS(on)) at VGS = 5.0 V and ID = 1.5 A? The on-resistance (RDS(on)) is 120 mΩ.
  10. What is the single pulse drain-to-source avalanche energy? The single pulse drain-to-source avalanche energy is 74 mJ.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:120mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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Same Series
NVF3055L108T1G
NVF3055L108T1G
MOSFET N-CH 60V 3A SOT223
NVF3055L108T3G
NVF3055L108T3G
MOSFET N-CH 60V 3A SOT223
NTF3055L108T3LF
NTF3055L108T3LF
MOSFET N-CH 60V 3A SOT223
NTF3055L108T3LFG
NTF3055L108T3LFG
MOSFET N-CH 60V 3A SOT223
NTF3055L108T3G
NTF3055L108T3G
MOSFET N-CH 60V 3A SOT223

Similar Products

Part Number NTF3055L108T3G NTF3055L108T1G
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 120mOhm @ 1.5A, 5V 120mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 5 V 15 nC @ 5 V
Vgs (Max) ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V 440 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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