NVF3055L108T1G
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onsemi NVF3055L108T1G

Manufacturer No:
NVF3055L108T1G
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 60V 3A SOT223
Delivery:
Payment:
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Product Introduction

Overview

The NVF3055L108T1G is a power MOSFET produced by ON Semiconductor. This N-channel, logic level MOSFET is designed for low voltage, high speed switching applications. It is packaged in a SOT-223 (TO-261) case, which is Pb-free and RoHS compliant. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Characteristic Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Gate-to-Source Voltage - Continuous VGS ±15 Vdc
Drain Current - Continuous @ TA = 25°C ID 3.0 Adc
Drain Current - Continuous @ TA = 100°C ID 1.4 Adc
Single Pulse Drain Current IDM 9.0 Apk
Total Power Dissipation @ TA = 25°C PD 2.1 Watts
Operating and Storage Temperature Range TJ, Tstg -55 to 175 °C
Static Drain-to-Source On-Resistance RDS(on) 120 mΩ
Gate Charge QT 15 nC nC
Maximum Lead Temperature for Soldering TL 260 °C

Key Features

  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free and RoHS compliant.
  • Logic level gate drive for ease of use with low voltage control signals.
  • Low on-state resistance (RDS(on)) of 120 mΩ.
  • High speed switching capabilities.
  • Surface mount SOT-223 (TO-261) package.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NVF3055L108T1G MOSFET?

    The maximum drain-to-source voltage (VDSS) is 60 Vdc.

  2. What is the continuous drain current at 25°C for this MOSFET?

    The continuous drain current (ID) at 25°C is 3.0 Adc.

  3. Is the NVF3055L108T1G Pb-free and RoHS compliant?

    Yes, the NVF3055L108T1G is Pb-free and RoHS compliant.

  4. What is the typical on-state resistance (RDS(on)) of this MOSFET?

    The typical on-state resistance (RDS(on)) is 120 mΩ.

  5. What are the operating and storage temperature ranges for this device?

    The operating and storage temperature range is -55°C to 175°C.

  6. What is the maximum gate charge (QT) for the NVF3055L108T1G?

    The maximum gate charge (QT) is 15 nC.

  7. What package type is used for the NVF3055L108T1G?

    The device is packaged in a SOT-223 (TO-261) case.

  8. Is the NVF3055L108T1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  9. What are some common applications for the NVF3055L108T1G MOSFET?

    Common applications include power supplies, converters, power motor controls, and bridge circuits.

  10. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:120mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number NVF3055L108T1G NVF3055L108T3G
Manufacturer onsemi onsemi
Product Status Not For New Designs Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 120mOhm @ 1.5A, 5V 120mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 5 V 15 nC @ 5 V
Vgs (Max) ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V 440 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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