onsemi NTF3055L108T1G

Manufacturer No:: NTF3055L108T1G
Manufacturer:: onsemi
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 60V 3A SOT223
Delivery:
Payment:

Product Introduction

Overview

The NTF3055L108T1G is a single N-Channel Logic Level Power MOSFET produced by onsemi. This component is designed for low voltage, high speed switching applications, making it suitable for various power management and control systems. It features the PowerTrench® T1 technology, which enhances its performance in high-frequency operations.

Key Specifications

Parameter	Value
Channel Polarity	N-Channel
V_DSS (Max)	60 V
I_D (Max)	3 A
R_DS(on) Max @ V_GS = 10 V	120 mΩ
V_GS (Max)	20 V
V_gs(th) (Max)	2.1 V
P_D (Max)	1.3 W
Package Type	SOT-223-4 / TO-261-4D
Operating Temperature	-55°C to 150°C

Key Features

RoHS Compliant
Logic Level Gate Drive
Low On-Resistance (R_DS(on))
High Speed Switching Capability
PowerTrench® T1 Technology for Enhanced Performance

Applications

Power Supplies
Converters
Power Motor Controls
Bridge Circuits

Q & A

What is the maximum drain-source voltage (V_DSS) of the NTF3055L108T1G?
The maximum drain-source voltage (V_DSS) is 60 V.
What is the maximum continuous drain current (I_D) of this MOSFET?
The maximum continuous drain current (I_D) is 3 A.
What is the typical on-resistance (R_DS(on)) at V_GS = 10 V?
The typical on-resistance (R_DS(on)) at V_GS = 10 V is 120 mΩ.
What is the maximum gate-source voltage (V_GS)?
The maximum gate-source voltage (V_GS) is 20 V.
What is the threshold voltage (V_gs(th))?
The threshold voltage (V_gs(th)) is typically 2.1 V.
What is the package type of the NTF3055L108T1G?
The package type is SOT-223-4 / TO-261-4D.
Is the NTF3055L108T1G RoHS compliant?
Yes, the NTF3055L108T1G is RoHS compliant.
What are the typical applications of the NTF3055L108T1G?
The typical applications include power supplies, converters, power motor controls, and bridge circuits.
What technology does the NTF3055L108T1G use?
The NTF3055L108T1G uses PowerTrench® T1 technology.
What is the maximum power dissipation (P_D) of the NTF3055L108T1G?
The maximum power dissipation (P_D) is 1.3 W.

In Stock

UnitPrice: $0.89

Quantity: 578

Please send RFQ , we will respond immediately.

Contact Name

Phone

Company

Country

Quantity

Same Series

Similar Products

Part Number	NTF3055L108T1G	NTF3055L108T3G
Manufacturer	onsemi	onsemi
Product Status	Active	Obsolete
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V	5V
Rds On (Max) @ Id, Vgs	120mOhm @ 1.5A, 5V	120mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id	2V @ 250µA	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 5 V	15 nC @ 5 V
Vgs (Max)	±15V	±15V
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 25 V	440 pF @ 25 V
FET Feature	-	-
Power Dissipation (Max)	1.3W (Ta)	1.3W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Supplier Device Package	SOT-223 (TO-261)	SOT-223 (TO-261)
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA

Related Product By Categories

Related Product By Brand

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	5V
Rds On (Max) @ Id, Vgs:	120mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 5 V
Vgs (Max):	±15V
Input Capacitance (Ciss) (Max) @ Vds:	440 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	1.3W (Ta)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-223 (TO-261)
Package / Case:	TO-261-4, TO-261AA