NTF3055L108T3LF
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onsemi NTF3055L108T3LF

Manufacturer No:
NTF3055L108T3LF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 3A SOT223
Delivery:
Payment:
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Product Introduction

Overview

The NTF3055L108T3LF is a power MOSFET produced by onsemi, designed for low voltage, high speed switching applications. This N-Channel, logic level MOSFET is housed in a SOT-223 package and is suitable for a variety of applications including power supplies, converters, power motor controls, and bridge circuits. It is RoHS compliant and Pb-free, making it environmentally friendly. The device is also AEC-Q101 qualified and PPAP capable, especially for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain-to-Gate Voltage VDGR 60 Vdc
Gate-to-Source Voltage VGS ± 15... ± 20 Vdc
Continuous Drain Current @ TA = 25°C ID 3.0 A
Continuous Drain Current @ TA = 100°C ID 1.4 A
Single Pulse Drain Current IDM 9.0 A
Total Power Dissipation @ TA = 25°C PD 2.1 Watts
Operating and Storage Temperature Range TJ, Tstg -55 to 175 °C
Static Drain-to-Source On-Resistance RDS(on) 120 mΩ
Thermal Resistance - Junction-to-Ambient RθJA 72.3 °C/W °C/W

Key Features

  • Logic level N-Channel MOSFET with a low on-resistance of 120 mΩ.
  • High speed switching capabilities, making it suitable for high-frequency applications.
  • RoHS compliant and Pb-free, ensuring environmental safety.
  • AEC-Q101 qualified and PPAP capable, ideal for automotive and other stringent applications.
  • Maximum drain current of 3.0 A and maximum drain-to-source voltage of 60 V.
  • Operating temperature range from -55°C to 175°C.

Applications

  • Power Supplies: Suitable for high-efficiency power supply designs.
  • Converters: Used in DC-DC converters and other power conversion circuits.
  • Power Motor Controls: Ideal for motor control circuits requiring high current and low on-resistance.
  • Bridge Circuits: Used in half-bridge and full-bridge configurations for various power applications.

Q & A

  1. What is the maximum drain-to-source voltage of the NTF3055L108T3LF MOSFET?

    The maximum drain-to-source voltage is 60 Vdc.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current rating at 25°C is 3.0 A.

  3. Is the NTF3055L108T3LF RoHS compliant?
  4. What are the typical applications of the NTF3055L108T3LF?
  5. What is the thermal resistance from junction to ambient for this MOSFET?
  6. Is the NTF3055L108T3LF AEC-Q101 qualified?
  7. What is the maximum operating temperature for this MOSFET?
  8. What is the typical on-resistance of the NTF3055L108T3LF?
  9. What package type is the NTF3055L108T3LF available in?
  10. What is the single pulse drain current rating?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:120mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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NTF3055L108T3LF
NTF3055L108T3LF
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NTF3055L108T3LFG
NTF3055L108T3LFG
MOSFET N-CH 60V 3A SOT223
NTF3055L108T3G
NTF3055L108T3G
MOSFET N-CH 60V 3A SOT223

Similar Products

Part Number NTF3055L108T3LF NTF3055L108T3LFG
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 120mOhm @ 1.5A, 5V 120mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 5 V 15 nC @ 5 V
Vgs (Max) ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V 440 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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