Overview
The NTD6416ANT4G is a power MOSFET from onsemi, designed for high-performance applications. This N-Channel MOSFET is part of the NTD6416AN series and is packaged in a DPAK (TO-252) case. It is known for its low on-resistance, high current capability, and robust avalanche characteristics, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 100 | V |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 17 | A |
| Continuous Drain Current (TC = 100°C) | ID | 11 | A |
| Power Dissipation (TC = 25°C) | PD | 71 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 62 | A |
| Operating and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Source Current (Body Diode) | IS | 17 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 43 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| On-Resistance (RDS(on)) at VGS = 10 V, ID = 17 A | RDS(on) | 81 | mΩ |
Key Features
- Low On-Resistance (RDS(on)): 81 mΩ at VGS = 10 V, ID = 17 A, ensuring minimal power loss.
- High Current Capability: Continuous drain current of 17 A at TC = 25°C.
- Avalanche Tested: 100% avalanche tested to ensure robustness under high stress conditions.
- ESD Protection: HBM ESD Level Class 1B, MM ESD Level Class M2.
- AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free and RoHS Compliant: Environmentally friendly packaging.
Applications
- Power Management: Ideal for power supplies, DC-DC converters, and other power management circuits.
- Automotive Systems: Suitable for automotive applications due to its AEC-Q101 qualification.
- Switching Circuits: Used in high-frequency switching applications such as motor control, power amplifiers, and switching power supplies.
- Industrial Control: Applicable in industrial control systems, including motor drives and power inverters.
Q & A
- What is the maximum drain-to-source voltage of the NTD6416ANT4G?
The maximum drain-to-source voltage (VDSS) is 100 V.
- What is the continuous drain current at 25°C?
The continuous drain current (ID) at 25°C is 17 A.
- What is the on-resistance (RDS(on)) of the MOSFET?
The on-resistance (RDS(on)) is 81 mΩ at VGS = 10 V, ID = 17 A.
- Is the NTD6416ANT4G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and suitable for automotive and other applications requiring unique site and control change requirements.
- What is the operating temperature range of the NTD6416ANT4G?
The operating and storage temperature range is −55 to +175°C.
- Is the NTD6416ANT4G Pb-Free and RoHS compliant?
Yes, it is Pb-Free and RoHS compliant.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation (PD) at 25°C is 71 W.
- What is the single pulse drain-to-source avalanche energy?
The single pulse drain-to-source avalanche energy (EAS) is 43 mJ.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C.
- What are the typical switching times for the NTD6416ANT4G?
The typical turn-on delay time (td(on)) is 9.2 ns, rise time (tr) is 22 ns, turn-off delay time (td(off)) is 24 ns, and fall time (tf) is 20 ns.
