Overview
The NTD6416ANLT4G is an N-Channel Power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It operates with a maximum drain-to-source voltage (Vds) of 100 V and can handle a continuous drain current (Id) of up to 19 A. The MOSFET features a low on-resistance (Rds(on)) of 74 mΩ, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Drain-to-Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Id) | 19 A |
| On-Resistance (Rds(on)) | 74 mΩ |
| Gate Threshold Voltage (Vgs(th)) | 2.0 - 4.0 V |
| Reverse Recovery Charge (Qrr) | 112 nC |
| Charge Time (Ta) | 50 ns |
| Discharge Time (Tb) | 14 ns |
Key Features
- Low on-resistance (Rds(on)) of 74 mΩ for efficient power handling.
- High continuous drain current (Id) of up to 19 A.
- Maximum drain-to-source voltage (Vds) of 100 V.
- Fast switching times with a charge time (Ta) of 50 ns and discharge time (Tb) of 14 ns.
- Low reverse recovery charge (Qrr) of 112 nC.
Applications
The NTD6416ANLT4G is suitable for various high-power applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Switching and power management in automotive and industrial systems.
- High-frequency switching applications.
Q & A
- What is the maximum drain-to-source voltage of the NTD6416ANLT4G?
The maximum drain-to-source voltage (Vds) is 100 V. - What is the continuous drain current rating of the NTD6416ANLT4G?
The continuous drain current (Id) is up to 19 A. - What is the on-resistance (Rds(on)) of the NTD6416ANLT4G?
The on-resistance (Rds(on)) is 74 mΩ. - What are the typical gate threshold voltage ranges for the NTD6416ANLT4G?
The gate threshold voltage (Vgs(th)) ranges from 2.0 to 4.0 V. - What is the reverse recovery charge (Qrr) of the NTD6416ANLT4G?
The reverse recovery charge (Qrr) is 112 nC. - What are the charge and discharge times for the NTD6416ANLT4G?
The charge time (Ta) is 50 ns, and the discharge time (Tb) is 14 ns. - In what types of applications is the NTD6416ANLT4G commonly used?
The NTD6416ANLT4G is commonly used in power supplies, DC-DC converters, motor control systems, and other high-power switching applications. - Where can I find detailed specifications for the NTD6416ANLT4G?
Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Octopart. - What is the significance of low on-resistance in the NTD6416ANLT4G?
Low on-resistance reduces power losses and improves efficiency in power handling applications. - How does the fast switching time benefit the performance of the NTD6416ANLT4G?
Fast switching times enable the MOSFET to handle high-frequency switching applications efficiently.
