NTD6415ANLT4G
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onsemi NTD6415ANLT4G

Manufacturer No:
NTD6415ANLT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 23A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD6415ANLT4G is a high-performance N-channel power MOSFET produced by onsemi. This device is designed to offer excellent electrical and thermal characteristics, making it suitable for a wide range of power management applications. The MOSFET features a logic-level gate drive, which simplifies the interface with microcontrollers and other logic circuits. With its robust construction in a DPAK package, it provides reliable operation in various industrial and consumer electronics environments.

Key Specifications

ParameterValueUnit
Voltage Rating (Vds)100V
Continuous Drain Current (Id)23A
Pulse Drain Current (Idm)80A
On-Resistance (Rds(on))52 mΩ @ 10V, 10A
Thermal Resistance (Junction-to-Case)1.8C/W
Thermal Resistance (Junction-to-Ambient)62.5C/W
Package TypeDPAK
Gate Threshold Voltage (Vgs(th))2 V @ 250 μAV

Key Features

  • Logic-level gate drive for easy interface with microcontrollers and logic circuits.
  • High continuous drain current of 23 A and pulse drain current of 80 A.
  • Low on-resistance of 52 mΩ at 10 V and 10 A.
  • Robust DPAK package for reliable thermal performance.
  • High voltage rating of 100 V, making it suitable for various power management applications.

Applications

The NTD6415ANLT4G is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Audio amplifiers and other high-power audio equipment.
  • Industrial control systems and automation.
  • Consumer electronics such as gaming consoles and high-end appliances.

Q & A

  1. What is the voltage rating of the NTD6415ANLT4G MOSFET?
    The voltage rating of the NTD6415ANLT4G MOSFET is 100 V.
  2. What is the continuous drain current of the NTD6415ANLT4G?
    The continuous drain current of the NTD6415ANLT4G is 23 A.
  3. What is the on-resistance of the NTD6415ANLT4G at 10 V and 10 A?
    The on-resistance of the NTD6415ANLT4G at 10 V and 10 A is 52 mΩ.
  4. What type of package does the NTD6415ANLT4G come in?
    The NTD6415ANLT4G comes in a DPAK package.
  5. What is the gate threshold voltage of the NTD6415ANLT4G?
    The gate threshold voltage of the NTD6415ANLT4G is 2 V at 250 μA.
  6. Is the NTD6415ANLT4G suitable for high-power audio equipment?
    Yes, the NTD6415ANLT4G is suitable for high-power audio equipment due to its high current and low on-resistance characteristics.
  7. Can the NTD6415ANLT4G be used in motor control systems?
    Yes, the NTD6415ANLT4G can be used in motor control and drive systems.
  8. What is the thermal resistance from junction to case for the NTD6415ANLT4G?
    The thermal resistance from junction to case for the NTD6415ANLT4G is 1.8 C/W.
  9. Is the NTD6415ANLT4G RoHS compliant?
    Yes, the NTD6415ANLT4G is RoHS compliant.
  10. What are some common applications of the NTD6415ANLT4G in consumer electronics?
    The NTD6415ANLT4G can be used in consumer electronics such as gaming consoles and high-end appliances.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:52mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1024 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NTD6415ANLT4G NTD6416ANLT4G NTD6415ANT4G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc) 19A (Tc) 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 10A, 10V 74mOhm @ 19A, 10V 55mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2.2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 40 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1024 pF @ 25 V 1000 pF @ 25 V 700 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 83W (Tc) 71W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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