Overview
The onsemi NVD6416ANLT4G-VF01 is a high-performance N-Channel Power MOSFET designed for various power management and control applications. This device is part of the NVD6416ANL series and is packaged in a TO-252-3 (DPAK) surface mount configuration. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications that require unique site and control change requirements. The MOSFET features a low on-resistance (RDS(on)) of 74 mΩ, high current capability of 19 A, and a voltage rating of 100 V. It is also 100% avalanche tested and RoHS compliant, ensuring reliability and environmental compliance.
Key Specifications
| Parameter | Description | Value | Unit |
|---|---|---|---|
| FET Type | N-Channel | ||
| Drain-to-Source Voltage (Vdss) | Maximum Drain-to-Source Voltage | 100 | V |
| Drain Current (ID) | Continuous Drain Current at TC = 25°C | 19 | A |
| Drain-Source On Resistance (RDS(on)) | Maximum On Resistance at VGS = 10 V, ID = 19 A | 74 | mΩ |
| Power Dissipation (PD) | Steady State Power Dissipation at TC = 25°C | 71 | W |
| Gate-Source Voltage (Vgss) | Maximum Gate-Source Voltage | ±20 | V |
| Gate Threshold Voltage (VGS(TH)) | Gate Threshold Voltage at ID = 250 μA | 1.0 - 2.2 | V |
| Operating Temperature Range | Operating Temperature Range | -55°C to +175°C | °C |
| Package Style | Package Type | TO-252-3 (DPAK) | |
| Mounting Method | Mounting Type | Surface Mount |
Key Features
- Low RDS(on): The MOSFET has a low on-resistance of 74 mΩ, which minimizes power losses and enhances efficiency.
- High Current Capability: It can handle a continuous drain current of 19 A, making it suitable for high-power applications.
- 100% Avalanche Tested: Ensures the device can withstand high-energy pulses, enhancing reliability.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality and reliability standards.
- RoHS Compliant: The device is lead-free and complies with RoHS regulations, ensuring environmental compliance).
- Wide Operating Temperature Range: Operates from -55°C to +175°C, making it versatile for various environments).
Applications
- Automotive Systems: Suitable for automotive applications due to its AEC-Q101 qualification and PPAP capability).
- Power Management: Ideal for power management in DC-DC converters, motor control, and power supplies).
- Industrial Control: Used in industrial control systems, including motor drives and power inverters).
- Consumer Electronics: Can be used in high-power consumer electronics such as power supplies and battery chargers).
Q & A
- What is the maximum drain-to-source voltage of the NVD6416ANLT4G-VF01 MOSFET?
The maximum drain-to-source voltage is 100 V).
- What is the continuous drain current rating of this MOSFET?
The continuous drain current rating is 19 A at TC = 25°C).
- What is the on-resistance (RDS(on)) of the NVD6416ANLT4G-VF01?
The maximum on-resistance is 74 mΩ at VGS = 10 V and ID = 19 A).
- Is the NVD6416ANLT4G-VF01 RoHS compliant?
Yes, the device is RoHS compliant and lead-free).
- What is the operating temperature range of this MOSFET?
The operating temperature range is -55°C to +175°C).
- What package type is the NVD6416ANLT4G-VF01 available in?
The device is packaged in a TO-252-3 (DPAK) surface mount configuration).
- Is the NVD6416ANLT4G-VF01 suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications).
- What is the gate threshold voltage of the NVD6416ANLT4G-VF01?
The gate threshold voltage is between 1.0 V and 2.2 V at ID = 250 μA).
- What is the maximum gate-source voltage for this MOSFET?
The maximum gate-source voltage is ±20 V).
- How many devices are typically shipped per reel?
2500 devices are typically shipped per reel).
