NTD6414ANT4G
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onsemi NTD6414ANT4G

Manufacturer No:
NTD6414ANT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 32A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD6414ANT4G is a high-performance N-channel power MOSFET produced by onsemi. This device is designed to provide high current handling and low on-resistance, making it suitable for a variety of power management and switching applications. The MOSFET is packaged in the TO-252 (DPAK) package, which offers good thermal performance and is widely used in industrial and automotive systems.

Key Specifications

ParameterValue
Voltage Rating (Vds)100V
Continuous Drain Current (Id)22A
Pulse Drain Current (Idm)117A
On-Resistance (Rds(on))37mΩ @ 32A, 10V
Power Dissipation (Pd)100W
Threshold Voltage (Vth)4V @ 250μA
PackageTO-252 (DPAK)

Key Features

  • High current handling capability with a continuous drain current of 22A and a pulse drain current of 117A.
  • Low on-resistance of 37mΩ at 32A and 10V, reducing power losses.
  • High voltage rating of 100V, suitable for various power management applications.
  • TO-252 (DPAK) package for good thermal performance and ease of use in different systems.
  • RoHS compliant, ensuring environmental sustainability.

Applications

  • Power management in industrial and automotive systems.
  • Switching applications such as DC-DC converters and motor control.
  • High-power audio amplifiers and other high-current electronic devices.
  • Battery management systems and charging circuits.

Q & A

  1. What is the voltage rating of the NTD6414ANT4G MOSFET?
    The voltage rating (Vds) of the NTD6414ANT4G is 100V.
  2. What is the continuous drain current of the NTD6414ANT4G?
    The continuous drain current (Id) is 22A.
  3. What is the on-resistance of the NTD6414ANT4G?
    The on-resistance (Rds(on)) is 37mΩ at 32A and 10V.
  4. What package type is the NTD6414ANT4G available in?
    The NTD6414ANT4G is available in the TO-252 (DPAK) package.
  5. Is the NTD6414ANT4G RoHS compliant?
    Yes, the NTD6414ANT4G is RoHS compliant.
  6. What are some common applications of the NTD6414ANT4G?
    Common applications include power management in industrial and automotive systems, switching applications, high-power audio amplifiers, and battery management systems.
  7. What is the pulse drain current (Idm) of the NTD6414ANT4G?
    The pulse drain current (Idm) is 117A.
  8. What is the threshold voltage (Vth) of the NTD6414ANT4G?
    The threshold voltage (Vth) is 4V @ 250μA.
  9. What is the power dissipation (Pd) of the NTD6414ANT4G?
    The power dissipation (Pd) is 100W.
  10. Where can I find detailed specifications for the NTD6414ANT4G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser, TME, and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:37mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1450 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
NTD6414AN-1G
NTD6414AN-1G
MOSFET N-CH 100V 32A IPAK

Similar Products

Part Number NTD6414ANT4G NTD6416ANT4G NTD6415ANT4G NTDV6414ANT4G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 100 V 100 V 100 V -
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 17A (Tc) 23A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V -
Rds On (Max) @ Id, Vgs 37mOhm @ 32A, 10V 81mOhm @ 17A, 10V 55mOhm @ 23A, 10V -
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 20 nC @ 10 V 29 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 25 V 620 pF @ 25 V 700 pF @ 25 V -
FET Feature - - - -
Power Dissipation (Max) 100W (Tc) 71W (Tc) 83W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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