NTD3055-150-1
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onsemi NTD3055-150-1

Manufacturer No:
NTD3055-150-1
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CHAN 9A 60V DPAK STR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD3055-150-1 is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for low voltage, high speed switching applications and is particularly suited for use in power supplies, converters, power motor controls, and bridge circuits. The MOSFET features a drain-to-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 9.0 A at 25°C. It is available in both DPAK and IPAK packages, ensuring versatility in various design requirements.

Key Specifications

RatingSymbolValueUnit
Drain-to-Source VoltageVdss60Vdc
Drain-to-Gate VoltageVdgr60Vdc
Gate-to-Source Voltage - ContinuousVgs±20Vdc
Gate-to-Source Voltage - Non-repetitive (tp < 10 ms)Vgs±30Vdc
Continuous Drain Current @ TA = 25°CId9.0A
Continuous Drain Current @ TA = 100°CId3.0A
Single Pulse Drain Current (tp < 10 μs)Idm27A
Total Power Dissipation @ TA = 25°CPd28.8W
Operating and Storage Temperature RangeTj, Tstg-55 to 175°C
Static Drain-to-Source On-Resistance (Rds(on))Rds(on)122 mΩ (Typ)
Gate Threshold Voltage (Vgs(th))Vgs(th)2.0 - 3.0Vdc

Key Features

  • N-Channel MOSFET with high current capability of 9.0 A.
  • Low on-resistance (Rds(on)) of 122 mΩ (typical).
  • High speed switching capabilities.
  • Pb-free and RoHS compliant.
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Available in DPAK and IPAK packages.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTD3055-150-1 MOSFET? The maximum drain-to-source voltage is 60 Vdc.
  2. What is the continuous drain current at 25°C? The continuous drain current at 25°C is 9.0 A.
  3. What is the typical on-resistance (Rds(on)) of the MOSFET? The typical on-resistance is 122 mΩ.
  4. Is the NTD3055-150-1 Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  5. What are the typical applications of the NTD3055-150-1? Typical applications include power supplies, converters, power motor controls, and bridge circuits.
  6. What is the operating temperature range of the MOSFET? The operating and storage temperature range is -55°C to 175°C.
  7. Is the NTD3055-150-1 AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
  8. What packages are available for the NTD3055-150-1? It is available in both DPAK and IPAK packages.
  9. What is the maximum lead temperature for soldering purposes? The maximum lead temperature for soldering purposes is 260°C.
  10. What is the single pulse drain-to-source avalanche energy of the MOSFET? The single pulse drain-to-source avalanche energy is 30 mJ.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number NTD3055-150-1 NTD3055-150-1G
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 60 V
Current - Continuous Drain (Id) @ 25°C - 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs - 150mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id - 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 15 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 280 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 1.5W (Ta), 28.8W (Tj)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type - Through Hole
Supplier Device Package - I-PAK
Package / Case - TO-251-3 Short Leads, IPak, TO-251AA

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