NTD3055-150-1G
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onsemi NTD3055-150-1G

Manufacturer No:
NTD3055-150-1G
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 60V 9A IPAK
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The NTD3055-150-1G is a power MOSFET produced by onsemi, designed for low voltage, high speed switching applications. This N-Channel MOSFET is available in both DPAK and IPAK packages and is RoHS compliant and Pb-Free. It is particularly suited for use in power supplies, converters, power motor controls, and bridge circuits. The device is also qualified for automotive and other applications requiring unique site and control change requirements, adhering to AEC-Q101 standards and PPAP capable.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain-to-Gate Voltage (RGS = 10 MΩ) VDGR 60 Vdc
Gate-to-Source Voltage - Continuous VGS ±20 Vdc
Gate-to-Source Voltage - Non-repetitive (tp ≤ 10 ms) VGS ±30 Vdc
Drain Current - Continuous @ TA = 25°C ID 9.0 A
Drain Current - Continuous @ TA = 100°C ID 3.0 A
Drain Current - Single Pulse (tp ≤ 10 μs) IDM 27 A
Total Power Dissipation @ TA = 25°C PD 28.8 W
Operating and Storage Temperature Range TJ, Tstg -55 to 175 °C
Static Drain-to-Source On-Resistance (RDS(on)) RDS(on) 122 mΩ (Typ)
Maximum Lead Temperature for Soldering Purposes TL 260 °C

Key Features

  • Designed for low voltage, high speed switching applications.
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free and RoHS compliant.
  • Available in DPAK and IPAK packages.
  • Low RDS(on) of 122 mΩ (Typical).
  • High drain current of up to 9.0 A.
  • High drain-to-source voltage of 60 V.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTD3055-150-1G MOSFET?

    The maximum drain-to-source voltage is 60 Vdc.

  2. What is the continuous drain current rating at 25°C for this MOSFET?

    The continuous drain current rating at 25°C is 9.0 A.

  3. Is the NTD3055-150-1G MOSFET RoHS compliant and Pb-Free?

    Yes, the NTD3055-150-1G MOSFET is RoHS compliant and Pb-Free.

  4. What are the typical applications for the NTD3055-150-1G MOSFET?

    Typical applications include power supplies, converters, power motor controls, and bridge circuits.

  5. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260°C.

  6. What is the static drain-to-source on-resistance (RDS(on)) of the NTD3055-150-1G?

    The typical static drain-to-source on-resistance (RDS(on)) is 122 mΩ.

  7. Is the NTD3055-150-1G qualified for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.

  8. What are the available package types for the NTD3055-150-1G MOSFET?

    The MOSFET is available in both DPAK and IPAK packages.

  9. What is the operating and storage temperature range for this MOSFET?

    The operating and storage temperature range is -55°C to 175°C.

  10. What is the total power dissipation at 25°C for the NTD3055-150-1G MOSFET?

    The total power dissipation at 25°C is 28.8 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta), 28.8W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Same Series
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NTD3055-150T4
MOSFET N-CH 60V 9A DPAK
NTD3055-150-1G
NTD3055-150-1G
MOSFET N-CH 60V 9A IPAK
NTD3055-150G
NTD3055-150G
MOSFET N-CH 60V 9A DPAK

Similar Products

Part Number NTD3055-150-1G NTD3055-150-1
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain (Id) @ 25°C 9A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 150mOhm @ 4.5A, 10V -
Vgs(th) (Max) @ Id 4V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 1.5W (Ta), 28.8W (Tj) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package I-PAK -
Package / Case TO-251-3 Short Leads, IPak, TO-251AA -

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