NTD3055-150G
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onsemi NTD3055-150G

Manufacturer No:
NTD3055-150G
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 60V 9A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD3055-150G is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for low voltage, high-speed switching applications, making it ideal for use in power supplies, converters, power motor controls, and bridge circuits. The MOSFET features a drain-to-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 9.0 A at 25°C. It is available in both DPAK and IPAK packages, ensuring versatility in various design requirements.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain-to-Gate Voltage (RGS = 10 MΩ) VDGR 60 Vdc
Gate-to-Source Voltage - Continuous VGS ±20 Vdc
Gate-to-Source Voltage - Non-repetitive (tp ≤ 10 ms) VGS ±30 Vdc
Continuous Drain Current @ TA = 25°C ID 9.0 A
Continuous Drain Current @ TA = 100°C ID 3.0 A
Single Pulse Drain Current (tp ≤ 10 μs) IDM 27 A
Total Power Dissipation @ TA = 25°C PD 28.8 W
Operating and Storage Temperature Range TJ, Tstg -55 to 175 °C
Static Drain-to-Source On-Resistance (RDS(on)) RDS(on) 122 mΩ (Typ)

Key Features

  • AEC-Q101 Qualified and PPAP Capable: The NVD prefix indicates that this device meets automotive and other stringent application requirements.
  • Pb-Free and RoHS Compliant: Ensures environmental compliance and reduces the risk of lead contamination.
  • High-Speed Switching: Designed for high-speed switching applications, making it suitable for power supplies, converters, and motor controls.
  • Low On-Resistance: Typical RDS(on) of 122 mΩ, which minimizes power losses during operation.
  • High Current Capability: Continuous drain current of 9.0 A at 25°C and single pulse current of up to 27 A.

Applications

  • Power Supplies: Ideal for use in DC-DC converters and other power supply circuits.
  • Converters: Suitable for various types of converters, including buck, boost, and flyback converters.
  • Power Motor Controls: Used in motor drive circuits for efficient and reliable operation.
  • Bridge Circuits: Applicable in full-bridge, half-bridge, and other bridge configurations.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the NTD3055-150G?

    The maximum drain-to-source voltage (VDSS) is 60 Vdc.

  2. What is the continuous drain current (ID) at 25°C?

    The continuous drain current (ID) at 25°C is 9.0 A.

  3. Is the NTD3055-150G Pb-Free and RoHS Compliant?
  4. What are the typical applications of the NTD3055-150G?

    The typical applications include power supplies, converters, power motor controls, and bridge circuits.

  5. What is the static drain-to-source on-resistance (RDS(on)) of the NTD3055-150G?

    The typical static drain-to-source on-resistance (RDS(on)) is 122 mΩ.

  6. Is the NTD3055-150G AEC-Q101 Qualified?
  7. What is the operating and storage temperature range of the NTD3055-150G?

    The operating and storage temperature range is -55°C to 175°C.

  8. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260°C for 10 seconds.

  9. What are the package options available for the NTD3055-150G?

    The device is available in both DPAK and IPAK packages.

  10. What is the total power dissipation at 25°C?

    The total power dissipation at 25°C is 28.8 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta), 28.8W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
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NTD3055-150-1G
NTD3055-150-1G
MOSFET N-CH 60V 9A IPAK
NTD3055-150G
NTD3055-150G
MOSFET N-CH 60V 9A DPAK

Similar Products

Part Number NTD3055-150G NTD3055-150
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain (Id) @ 25°C 9A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 150mOhm @ 4.5A, 10V -
Vgs(th) (Max) @ Id 4V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 1.5W (Ta), 28.8W (Tj) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package DPAK -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 -

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