NTD3055-150
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onsemi NTD3055-150

Manufacturer No:
NTD3055-150
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CHAN 9A 60V DPAK
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The NTD3055-150 is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for low voltage, high-speed switching applications and is available in both DPAK (TO-252) and IPAK (TO-251) packages. It is particularly suited for use in power supplies, converters, power motor controls, and bridge circuits. The MOSFET is known for its robust specifications, including a maximum continuous drain current of 9 A and a maximum drain-source voltage of 60 V. It is also Pb-free and RoHS compliant, making it an environmentally friendly choice.

Key Specifications

Parameter Value Unit
Channel Type N -
Maximum Continuous Drain Current 9 A A
Maximum Drain Source Voltage 60 V V
Package Type DPAK (TO-252), IPAK (TO-251) -
Mounting Type Surface Mount, Through Hole -
Pin Count 3 -
Maximum Drain Source Resistance 150 mΩ
Channel Mode Enhancement -
Maximum Gate Threshold Voltage 4 V V
Maximum Power Dissipation 28.8 W W
Maximum Gate Source Voltage -20 V, +20 V V
Maximum Operating Temperature +175 °C °C
Minimum Operating Temperature -55 °C °C
Typical Gate Charge @ Vgs 7.1 nC @ 10 V nC

Key Features

  • High Current Capability: Maximum continuous drain current of 9 A.
  • Low On-Resistance: Maximum drain-source resistance of 150 mΩ.
  • High Voltage Rating: Maximum drain-source voltage of 60 V.
  • Enhancement Mode: N-Channel enhancement mode MOSFET.
  • Environmental Compliance: Pb-free and RoHS compliant.
  • AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements.
  • High Speed Switching: Designed for low voltage, high-speed switching applications.

Applications

  • Power Supplies: Used in various power supply configurations due to its high current and voltage ratings.
  • Converters: Suitable for DC-DC converters and other power conversion applications.
  • Power Motor Controls: Used in motor control circuits for efficient and reliable operation.
  • Bridge Circuits: Often used in bridge configurations for high-power applications.

Q & A

  1. What is the maximum continuous drain current of the NTD3055-150 MOSFET?

    The maximum continuous drain current is 9 A.

  2. What is the maximum drain-source voltage rating of this MOSFET?

    The maximum drain-source voltage is 60 V.

  3. What are the available package types for the NTD3055-150?

    The MOSFET is available in DPAK (TO-252) and IPAK (TO-251) packages.

  4. Is the NTD3055-150 Pb-free and RoHS compliant?

    Yes, it is Pb-free and RoHS compliant.

  5. What is the maximum operating temperature of the NTD3055-150?

    The maximum operating temperature is +175 °C.

  6. What is the typical gate charge at Vgs = 10 V for this MOSFET?

    The typical gate charge is 7.1 nC at Vgs = 10 V.

  7. Is the NTD3055-150 suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

  8. What are some common applications of the NTD3055-150 MOSFET?

    Common applications include power supplies, converters, power motor controls, and bridge circuits.

  9. What is the maximum power dissipation of the NTD3055-150?

    The maximum power dissipation is 28.8 W.

  10. What is the maximum gate-source voltage rating for this MOSFET?

    The maximum gate-source voltage is -20 V to +20 V.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number NTD3055-150 NTD3055-150G
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 60 V
Current - Continuous Drain (Id) @ 25°C - 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs - 150mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id - 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 15 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 280 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 1.5W (Ta), 28.8W (Tj)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - DPAK
Package / Case - TO-252-3, DPak (2 Leads + Tab), SC-63

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