NTD3055-150T4G
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onsemi NTD3055-150T4G

Manufacturer No:
NTD3055-150T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 9A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD3055-150T4G is an N-Channel Power MOSFET produced by onsemi, designed for low voltage, high-speed switching applications. This device is particularly suited for use in power supplies, converters, power motor controls, and bridge circuits. It features a maximum drain-to-source voltage of 60 V and a maximum continuous drain current of 9 A, making it a robust choice for various power management needs.

Key Specifications

Specification Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain-to-Gate Voltage VDGR 60 Vdc
Gate-to-Source Voltage - Continuous VGS −20 to +20 Vdc
Gate-to-Source Voltage - Non-repetitive (tp < 10 ms) VGS −30 to +30 Vdc
Continuous Drain Current @ TA = 25°C ID 9.0 A
Continuous Drain Current @ TA = 100°C ID 3.0 A
Single Pulse Drain Current (tp < 10 µs) IDM 27 A
Total Power Dissipation @ TA = 25°C PD 28.8 W
Operating and Storage Temperature Range TJ, Tstg −55 to 175 °C
Maximum Lead Temperature for Soldering TL 260 °C
Static Drain-to-Source On-Resistance RDS(on) 122 mΩ
Package Type DPAK (TO-252)
Mounting Type Surface Mount

Key Features

  • AEC-Q101 Qualified and PPAP Capable: The NVD prefix indicates that this device meets automotive and other stringent application requirements.
  • Pb-Free and RoHS Compliant: Ensures environmental compliance and reduces the risk of lead contamination.
  • High-Speed Switching: Designed for low voltage, high-speed switching applications, making it ideal for power supplies, converters, and motor controls.
  • Low On-Resistance: Typical RDS(on) of 122 mΩ at VGS = 10 Vdc, ID = 4.5 A, enhancing efficiency in power management.
  • High Current Capability: Maximum continuous drain current of 9 A and single pulse drain current of 27 A.
  • Wide Operating Temperature Range: From -55°C to 175°C, ensuring reliability in diverse environmental conditions.

Applications

  • Power Supplies: Suitable for use in various power supply designs due to its high-speed switching and low on-resistance characteristics.
  • Converters: Ideal for DC-DC converters and other power conversion applications.
  • Power Motor Controls: Used in motor control circuits for efficient and reliable operation.
  • Bridge Circuits: Applicable in bridge configurations for power management and control.

Q & A

  1. What is the maximum drain-to-source voltage of the NTD3055-150T4G MOSFET?

    The maximum drain-to-source voltage is 60 Vdc.

  2. What is the maximum continuous drain current of this MOSFET?

    The maximum continuous drain current is 9 A at TA = 25°C.

  3. Is the NTD3055-150T4G Pb-Free and RoHS compliant?
  4. What is the typical on-resistance of the NTD3055-150T4G?

    The typical static drain-to-source on-resistance is 122 mΩ at VGS = 10 Vdc, ID = 4.5 A.

  5. What are the operating and storage temperature ranges for this MOSFET?

    The operating and storage temperature range is from -55°C to 175°C.

  6. What package types are available for the NTD3055-150T4G?

    The device is available in DPAK (TO-252) and IPAK packages.

  7. Is the NTD3055-150T4G suitable for automotive applications?
  8. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260°C.

  9. What are the typical applications of the NTD3055-150T4G MOSFET?

    Typical applications include power supplies, converters, power motor controls, and bridge circuits.

  10. What is the gate threshold voltage range for this MOSFET?

    The gate threshold voltage range is from 2.0 V to 4.0 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta), 28.8W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
NTD3055-150T4G
NTD3055-150T4G
MOSFET N-CH 60V 9A DPAK
NVD3055-150T4G-VF01
NVD3055-150T4G-VF01
MOSFET N-CH 60V 9A DPAK
NTD3055-150-1G
NTD3055-150-1G
MOSFET N-CH 60V 9A IPAK
NTD3055-150G
NTD3055-150G
MOSFET N-CH 60V 9A DPAK

Similar Products

Part Number NTD3055-150T4G NTD3055-150T4
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta) 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 4.5A, 10V 150mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 25 V 280 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta), 28.8W (Tj) 1.5W (Ta), 28.8W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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