Overview
The NTD25P03LT4G is a P-Channel Logic Level MOSFET produced by ON Semiconductor. This device is designed for low voltage, high speed switching applications and is capable of withstanding high energy in avalanche and commutation modes. It features a low on-state resistance and fast switching times, making it suitable for a variety of power management and control applications. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive and other stringent requirements. It is also Pb-free and RoHS compliant, aligning with environmental standards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -30 | V |
| Gate-to-Source Voltage - Continuous | VGS | ±15 | V |
| Gate-to-Source Voltage - Non-Repetitive (tp ≤ 10 ms) | VGSM | ±20 | V |
| Drain Current - Continuous @ TA = 25°C | ID | -25 | A |
| Drain Current - Single Pulse (tp ≤ 10 μs) | IDM | -75 | A |
| Total Power Dissipation @ TA = 25°C | PD | 75 | W |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 200 | mJ |
| Thermal Resistance - Junction-to-Case | RθJC | 1.65 | °C/W |
| Thermal Resistance - Junction-to-Ambient | RθJA | 67 / 120 | °C/W |
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | °C |
Key Features
- Low On-State Resistance: Typical RDS(on) of 0.051 Ω at VGS = -5.0 V and ID = -12.5 A.
- High Speed Switching: Designed for high speed switching applications with fast turn-on and turn-off times.
- Avalanche and Commutation Capability: Withstands high energy in avalanche and commutation modes.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free and RoHS Compliant: Environmentally friendly packaging.
- Fast Body Diode Recovery: Comparable to a discrete fast recovery diode, with a reverse recovery time (trr) of 35 ns.
Applications
- PWM Motor Controls: Suitable for pulse-width modulation motor control systems due to its fast switching capabilities.
- Power Supplies: Used in various power supply configurations requiring high efficiency and reliability.
- Converters: Ideal for DC-DC converters and other power conversion applications.
- Bridge Circuits: Can be used in bridge configurations for high power switching applications.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTD25P03LT4G?
The maximum drain-to-source voltage (VDSS) is -30 V.
- What is the continuous gate-to-source voltage (VGS) rating?
The continuous gate-to-source voltage (VGS) rating is ±15 V.
- What is the maximum continuous drain current (ID) at TA = 25°C?
The maximum continuous drain current (ID) at TA = 25°C is -25 A.
- What is the total power dissipation (PD) at TA = 25°C?
The total power dissipation (PD) at TA = 25°C is 75 W.
- What is the operating and storage temperature range for the NTD25P03LT4G?
The operating and storage temperature range is -55 to +150°C.
- What is the single pulse drain-to-source avalanche energy (EAS) rating?
The single pulse drain-to-source avalanche energy (EAS) rating is 200 mJ.
- Is the NTD25P03LT4G AEC-Q101 qualified?
Yes, the NTD25P03LT4G is AEC-Q101 qualified and PPAP capable.
- What is the typical on-state resistance (RDS(on)) of the NTD25P03LT4G?
The typical on-state resistance (RDS(on)) is 0.051 Ω at VGS = -5.0 V and ID = -12.5 A.
- What is the reverse recovery time (trr) of the body diode?
The reverse recovery time (trr) of the body diode is 35 ns.
- Is the NTD25P03LT4G Pb-free and RoHS compliant?
Yes, the NTD25P03LT4G is Pb-free and RoHS compliant.
