NTD25P03LT4G
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onsemi NTD25P03LT4G

Manufacturer No:
NTD25P03LT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 25A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD25P03LT4G is a P-Channel Logic Level MOSFET produced by ON Semiconductor. This device is designed for low voltage, high speed switching applications and is capable of withstanding high energy in avalanche and commutation modes. It features a low on-state resistance and fast switching times, making it suitable for a variety of power management and control applications. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive and other stringent requirements. It is also Pb-free and RoHS compliant, aligning with environmental standards.

Key Specifications

Characteristic Symbol Value Unit
Drain-to-Source Voltage VDSS -30 V
Gate-to-Source Voltage - Continuous VGS ±15 V
Gate-to-Source Voltage - Non-Repetitive (tp ≤ 10 ms) VGSM ±20 V
Drain Current - Continuous @ TA = 25°C ID -25 A
Drain Current - Single Pulse (tp ≤ 10 μs) IDM -75 A
Total Power Dissipation @ TA = 25°C PD 75 W
Operating and Storage Temperature Range TJ, Tstg -55 to +150 °C
Single Pulse Drain-to-Source Avalanche Energy EAS 200 mJ
Thermal Resistance - Junction-to-Case RθJC 1.65 °C/W
Thermal Resistance - Junction-to-Ambient RθJA 67 / 120 °C/W
Maximum Lead Temperature for Soldering Purposes TL 260 °C

Key Features

  • Low On-State Resistance: Typical RDS(on) of 0.051 Ω at VGS = -5.0 V and ID = -12.5 A.
  • High Speed Switching: Designed for high speed switching applications with fast turn-on and turn-off times.
  • Avalanche and Commutation Capability: Withstands high energy in avalanche and commutation modes.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free and RoHS Compliant: Environmentally friendly packaging.
  • Fast Body Diode Recovery: Comparable to a discrete fast recovery diode, with a reverse recovery time (trr) of 35 ns.

Applications

  • PWM Motor Controls: Suitable for pulse-width modulation motor control systems due to its fast switching capabilities.
  • Power Supplies: Used in various power supply configurations requiring high efficiency and reliability.
  • Converters: Ideal for DC-DC converters and other power conversion applications.
  • Bridge Circuits: Can be used in bridge configurations for high power switching applications.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the NTD25P03LT4G?

    The maximum drain-to-source voltage (VDSS) is -30 V.

  2. What is the continuous gate-to-source voltage (VGS) rating?

    The continuous gate-to-source voltage (VGS) rating is ±15 V.

  3. What is the maximum continuous drain current (ID) at TA = 25°C?

    The maximum continuous drain current (ID) at TA = 25°C is -25 A.

  4. What is the total power dissipation (PD) at TA = 25°C?

    The total power dissipation (PD) at TA = 25°C is 75 W.

  5. What is the operating and storage temperature range for the NTD25P03LT4G?

    The operating and storage temperature range is -55 to +150°C.

  6. What is the single pulse drain-to-source avalanche energy (EAS) rating?

    The single pulse drain-to-source avalanche energy (EAS) rating is 200 mJ.

  7. Is the NTD25P03LT4G AEC-Q101 qualified?

    Yes, the NTD25P03LT4G is AEC-Q101 qualified and PPAP capable.

  8. What is the typical on-state resistance (RDS(on)) of the NTD25P03LT4G?

    The typical on-state resistance (RDS(on)) is 0.051 Ω at VGS = -5.0 V and ID = -12.5 A.

  9. What is the reverse recovery time (trr) of the body diode?

    The reverse recovery time (trr) of the body diode is 35 ns.

  10. Is the NTD25P03LT4G Pb-free and RoHS compliant?

    Yes, the NTD25P03LT4G is Pb-free and RoHS compliant.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:25A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 5V
Rds On (Max) @ Id, Vgs:80mOhm @ 25A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:1260 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):75W (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NTD25P03LT4G NTD25P03LT4
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta) 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V 4V, 5V
Rds On (Max) @ Id, Vgs 80mOhm @ 25A, 5V 80mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V 20 nC @ 5 V
Vgs (Max) ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 1260 pF @ 25 V 1260 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 75W (Tj) 75W (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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