Overview
The NTD25P03LT4G is a P-Channel Logic Level Power MOSFET produced by onsemi. This device is designed for low voltage, high speed switching applications and is capable of withstanding high energy in avalanche and commutation modes. It features a source-to-drain diode recovery time comparable to a discrete fast recovery diode, making it suitable for various high-performance applications.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -30 | V |
| Gate-to-Source Voltage - Continuous | VGS | -15 | V |
| Gate-to-Source Voltage - Non-Repetitive (tp ≤ 10 ms) | VGSM | -20 | V |
| Drain Current - Continuous @ TA = 25°C | ID | -25 | A |
| Drain Current - Single Pulse (tp ≤ 10 μs) | IDM | -75 | A |
| Total Power Dissipation @ TA = 25°C | PD | 75 | W |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 200 | mJ |
| Thermal Resistance - Junction-to-Case | RJC | 1.65 | °C/W |
| Thermal Resistance - Junction-to-Ambient | RJA | 67 | °C/W |
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Static Drain-to-Source On-State Resistance @ VGS = 10 V | RDS(on) | 72 mΩ | mΩ |
| Gate Threshold Voltage | VGS(th) | -1.0 to 4.0 | V |
| Input Capacitance | Ciss | 900 pF | pF |
Key Features
- Logic Level P-Channel MOSFET with a drain-to-source voltage (VDSS) of -30V and a drain current (ID) of -25A.
- Low on-state resistance (RDS(on)) of 72 mΩ at VGS = 10 V.
- High speed switching capabilities and high energy handling in avalanche and commutation modes.
- Source-to-drain diode recovery time comparable to a discrete fast recovery diode.
- Pb-free and RoHS compliant.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
Applications
- PWM Motor Controls
- Power Supplies
- Converters
- Bridge Circuits
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTD25P03LT4G MOSFET?
The maximum drain-to-source voltage (VDSS) is -30V.
- What is the maximum continuous drain current (ID) of the NTD25P03LT4G MOSFET?
The maximum continuous drain current (ID) is -25A.
- What is the typical on-state resistance (RDS(on)) of the NTD25P03LT4G MOSFET at VGS = 10 V?
The typical on-state resistance (RDS(on)) is 72 mΩ at VGS = 10 V.
- Is the NTD25P03LT4G MOSFET RoHS compliant?
Yes, the NTD25P03LT4G MOSFET is Pb-free and RoHS compliant.
- What are the typical applications of the NTD25P03LT4G MOSFET?
Typical applications include PWM Motor Controls, Power Supplies, Converters, and Bridge Circuits.
- What is the maximum operating junction temperature of the NTD25P03LT4G MOSFET?
The maximum operating junction temperature is +150°C.
- What is the single pulse drain-to-source avalanche energy (EAS) of the NTD25P03LT4G MOSFET?
The single pulse drain-to-source avalanche energy (EAS) is 200 mJ.
- What is the thermal resistance - junction-to-case (RJC) of the NTD25P03LT4G MOSFET?
The thermal resistance - junction-to-case (RJC) is 1.65 °C/W.
- Is the NTD25P03LT4G MOSFET AEC-Q101 qualified?
Yes, the NTD25P03LT4G MOSFET is AEC-Q101 qualified and PPAP capable.
- What is the maximum lead temperature for soldering purposes of the NTD25P03LT4G MOSFET?
The maximum lead temperature for soldering purposes is 260°C.
