Overview
The NTD25P03LG is a power MOSFET produced by onsemi, designed for low voltage, high-speed switching applications. This P-Channel, logic level MOSFET is packaged in a DPAK (TO-252) case and is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements. It is Pb-free and RoHS compliant, ensuring environmental sustainability.
The device is optimized to withstand high energy in avalanche and commutation modes, with a source-to-drain diode recovery time comparable to a discrete fast recovery diode. This makes it an excellent choice for various power management and control applications.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -30 | V |
| Gate-to-Source Voltage - Continuous | VGS | ±15 | V |
| Gate-to-Source Voltage - Non-Repetitive (tp ≤ 10 ms) | VGSM | ±20 | V |
| Drain Current - Continuous @ TA = 25°C | ID | -25 | A |
| Drain Current - Single Pulse (tp ≤ 10 µs) | IDM | -75 | A |
| Total Power Dissipation @ TA = 25°C | PD | 75 | W |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 200 | mJ |
| Thermal Resistance - Junction-to-Case | RθJC | 1.65 | °C/W |
| Thermal Resistance - Junction-to-Ambient | RθJA | 67 | °C/W |
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | °C |
Key Features
- Logic Level Gate Drive: The MOSFET is designed for logic level gate drive, making it compatible with low voltage control signals.
- High Current Capability: It can handle a continuous drain current of -25 A and a single pulse current of -75 A.
- Low On-State Resistance: The static drain-to-source on-state resistance (RDS(on)) is as low as 0.051 Ω at VGS = -5.0 V.
- Fast Switching Times: The device features fast turn-on and turn-off times, with a turn-on delay time (td(on)) of 9.0 ns and a turn-off delay time (td(off)) of 15 ns.
- Avalanche Ruggedness: It has a high single pulse drain-to-source avalanche energy rating of 200 mJ.
- Environmental Compliance: Pb-free and RoHS compliant, ensuring it meets environmental standards.
- AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements.
Applications
- PWM Motor Controls: Ideal for pulse-width modulation motor control applications due to its high current handling and fast switching times.
- Power Supplies: Used in various power supply designs where high efficiency and reliability are crucial.
- Converters: Suitable for DC-DC converters and other power conversion applications.
- Bridge Circuits: Can be used in bridge configurations for high power handling and efficient switching.
Q & A
- What is the maximum drain-to-source voltage of the NTD25P03LG MOSFET?
The maximum drain-to-source voltage (VDSS) is -30 V.
- What is the continuous drain current rating of the NTD25P03LG?
The continuous drain current (ID) is -25 A.
- What is the typical on-state resistance of the NTD25P03LG?
The typical static drain-to-source on-state resistance (RDS(on)) is 0.051 Ω at VGS = -5.0 V.
- Is the NTD25P03LG Pb-free and RoHS compliant?
Yes, the NTD25P03LG is Pb-free and RoHS compliant.
- What are the typical applications of the NTD25P03LG MOSFET?
Typical applications include PWM motor controls, power supplies, converters, and bridge circuits.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 260°C.
- What is the thermal resistance from junction to case for the NTD25P03LG?
The thermal resistance from junction to case (RθJC) is 1.65°C/W.
- Is the NTD25P03LG AEC-Q101 qualified?
Yes, the NTD25P03LG is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What is the single pulse drain-to-source avalanche energy rating of the NTD25P03LG?
The single pulse drain-to-source avalanche energy (EAS) is 200 mJ.
- What are the turn-on and turn-off delay times of the NTD25P03LG?
The turn-on delay time (td(on)) is 9.0 ns, and the turn-off delay time (td(off)) is 15 ns.
