Overview
The NTD25P03LRLG is a power MOSFET from onsemi, designed for low voltage, high speed switching applications. It is a P-Channel, logic level MOSFET packaged in a DPAK case. This device is optimized for applications requiring high current handling and fast switching times, making it suitable for various power management and control systems. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring its reliability in automotive and other demanding applications. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -30 | V |
| Gate-to-Source Voltage - Continuous | VGS | ±15 | V |
| Gate-to-Source Voltage - Non-Repetitive (tp ≤ 10 ms) | VGSM | ±20 | V |
| Drain Current - Continuous @ TA = 25°C | ID | -25 | A |
| Drain Current - Single Pulse (tp ≤ 10 μs) | IDM | -75 | A |
| Total Power Dissipation @ TA = 25°C | PD | 75 | W |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 200 | mJ |
| Thermal Resistance - Junction-to-Case | RθJC | 1.65 | °C/W |
| Thermal Resistance - Junction-to-Ambient | RθJA | 67 / 120 | °C/W |
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | °C |
Key Features
- Designed for low voltage, high speed switching applications.
- P-Channel, logic level MOSFET.
- AEC-Q101 qualified and PPAP capable for automotive and other demanding applications.
- Pb-free and RoHS compliant.
- High current handling capability with a continuous drain current of -25 A.
- Fast switching times with turn-on and turn-off delay times of 9.0 ns and 15 ns respectively.
- Low on-state resistance (RDS(on)) of 0.051 Ω at VGS = -5.0 V.
- Source-to-drain diode recovery time comparable to a discrete fast recovery diode.
Applications
- PWM Motor Controls.
- Power Supplies.
- Converters.
- Bridge Circuits.
Q & A
- What is the maximum drain-to-source voltage of the NTD25P03LRLG MOSFET?
The maximum drain-to-source voltage (VDSS) is -30 V. - What is the continuous drain current rating of the NTD25P03LRLG?
The continuous drain current (ID) is -25 A at TA = 25°C. - Is the NTD25P03LRLG suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. - What is the thermal resistance of the NTD25P03LRLG?
The thermal resistance (RθJC) is 1.65 °C/W, and the thermal resistance (RθJA) is 67 °C/W or 120 °C/W depending on the mounting conditions. - What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 260 °C. - What are the typical applications of the NTD25P03LRLG MOSFET?
Typical applications include PWM motor controls, power supplies, converters, and bridge circuits. - Is the NTD25P03LRLG Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant. - What is the on-state resistance (RDS(on)) of the NTD25P03LRLG?
The on-state resistance (RDS(on)) is typically 0.051 Ω at VGS = -5.0 V. - What is the single pulse drain-to-source avalanche energy of the NTD25P03LRLG?
The single pulse drain-to-source avalanche energy (EAS) is 200 mJ. - What are the turn-on and turn-off delay times of the NTD25P03LRLG?
The turn-on delay time (td(on)) is 9.0 ns, and the turn-off delay time (td(off)) is 15 ns.
