NTD25P03L1G
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onsemi NTD25P03L1G

Manufacturer No:
NTD25P03L1G
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET P-CH 30V 25A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD25P03L1G is a Single P-Channel Logic Level Power MOSFET designed and manufactured by onsemi. This device is optimized for low voltage, high speed switching applications and is capable of withstanding high energy levels in both avalanche and commutation modes. It features a drain-to-source voltage (Vdss) of -30V and a continuous drain current (Id) of -25A at 25°C, with a maximum on-resistance (Rds On) of 80mΩ at 25A and 5V gate-to-source voltage. The MOSFET is packaged in a TO-251-3 (IPAK) case, making it suitable for through-hole mounting.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (Vdss)-30V
Continuous Drain Current (Id) @ 25°C-25A
Maximum On-Resistance (Rds On) @ Id, Vgs80 mΩ @ 25A, 5V
Gate Threshold Voltage (Vgs(th)) @ Id2V @ 250µAV
Maximum Gate to Source Voltage (Vgs)±15V
Power Dissipation (Max) @ Tj75W
Operating Temperature Range-55°C to 150°C°C
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Input Capacitance (Ciss) @ Vds1260 pF @ 25 VpF
Gate Charge (Qg) @ Vgs20 nC @ 5 VnC

Key Features

  • Designed for low voltage, high speed switching applications.
  • Able to withstand high energy in avalanche and commutation modes.
  • Pb-Free and RoHS Compliant.
  • AEC-Q101 Qualified and PPAP Capable for automotive and other applications requiring unique site and control change requirements.
  • Comparable source-to-drain diode recovery time to a discrete fast recovery diode.

Applications

  • PWM Motor Controls.
  • Power Supplies.
  • Converters.
  • Bridge Circuits.
  • Soft Start Circuits.
  • Overcurrent Protection.
  • Resonant Converters.

Q & A

  1. What is the maximum drain-to-source voltage of the NTD25P03L1G MOSFET?
    The maximum drain-to-source voltage (Vdss) is -30V.
  2. What is the continuous drain current rating of the NTD25P03L1G at 25°C?
    The continuous drain current (Id) is -25A at 25°C.
  3. What is the typical on-resistance of the NTD25P03L1G?
    The maximum on-resistance (Rds On) is 80mΩ at 25A and 5V gate-to-source voltage.
  4. What is the gate threshold voltage of the NTD25P03L1G?
    The gate threshold voltage (Vgs(th)) is 2V at 250µA.
  5. What is the maximum gate-to-source voltage for the NTD25P03L1G?
    The maximum gate-to-source voltage (Vgs) is ±15V.
  6. What is the power dissipation rating of the NTD25P03L1G?
    The maximum power dissipation is 75W at Tj.
  7. What is the operating temperature range of the NTD25P03L1G?
    The operating temperature range is -55°C to 150°C.
  8. In what package is the NTD25P03L1G available?
    The NTD25P03L1G is available in a TO-251-3 (IPAK) package.
  9. Is the NTD25P03L1G Pb-Free and RoHS Compliant?
    Yes, the NTD25P03L1G is Pb-Free and RoHS Compliant.
  10. What are some typical applications of the NTD25P03L1G?
    Typical applications include PWM Motor Controls, Power Supplies, Converters, Bridge Circuits, Soft Start Circuits, Overcurrent Protection, and Resonant Converters.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:25A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 5V
Rds On (Max) @ Id, Vgs:80mOhm @ 25A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:1260 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):75W (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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NTD25P03L1G
NTD25P03L1G
MOSFET P-CH 30V 25A IPAK
NTD25P03LG
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NTD25P03LRLG
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Similar Products

Part Number NTD25P03L1G NTD25P03LG NTD25P03L1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta) 25A (Ta) 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V 4V, 5V 4V, 5V
Rds On (Max) @ Id, Vgs 80mOhm @ 25A, 5V 80mOhm @ 25A, 5V 80mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V 20 nC @ 5 V 20 nC @ 5 V
Vgs (Max) ±15V ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 1260 pF @ 25 V 1260 pF @ 25 V 1260 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 75W (Tj) 75W (Tj) 75W (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole
Supplier Device Package I-PAK DPAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA

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