NTD25P03L1
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onsemi NTD25P03L1

Manufacturer No:
NTD25P03L1
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET P-CH 30V 25A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD25P03L1, produced by onsemi, is a single P-Channel Logic Level Power MOSFET designed for low voltage, high speed switching applications. It is capable of withstanding high energy in the avalanche and commutation modes. The source-to-drain diode recovery time of this MOSFET is comparable to a discrete fast recovery diode, making it suitable for demanding switching environments.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS -30 V
Gate-to-Source Voltage - Continuous VGS ±15 V
Gate-to-Source Voltage - Non-Repetitive (tp ≤ 10 ms) VGSM ±20 V
Drain Current - Continuous @ TA = 25°C ID -25 A
Drain Current - Single Pulse (tp ≤ 10 μs) IDM -75 A
Total Power Dissipation @ TA = 25°C PD 75 W
Operating and Storage Temperature Range TJ, Tstg -55 to +150 °C
Single Pulse Drain-to-Source Avalanche Energy EAS 200 mJ
Thermal Resistance - Junction-to-Case RθJC 1.65 °C/W
Thermal Resistance - Junction-to-Ambient RθJA 67 (Note 1), 120 (Note 2) °C/W
Maximum Lead Temperature for Soldering Purposes TL 260 °C

Key Features

  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
  • Pb-Free and RoHS Compliant.
  • Designed for low voltage, high speed switching applications.
  • Capable of withstanding high energy in the avalanche and commutation modes.
  • Source-to-drain diode recovery time comparable to a discrete fast recovery diode.

Applications

  • PWM Motor Controls.
  • Power Supplies.
  • Converters.
  • Bridge Circuits.

Q & A

  1. What is the maximum drain-to-source voltage of the NTD25P03L1 MOSFET? The maximum drain-to-source voltage is -30 V.
  2. What is the continuous drain current rating at 25°C? The continuous drain current rating is -25 A.
  3. Is the NTD25P03L1 MOSFET RoHS compliant? Yes, the NTD25P03L1 is Pb-Free and RoHS compliant.
  4. What are the typical applications of the NTD25P03L1? Typical applications include PWM Motor Controls, Power Supplies, Converters, and Bridge Circuits.
  5. What is the thermal resistance from junction to case? The thermal resistance from junction to case is 1.65 °C/W.
  6. What is the maximum single pulse drain-to-source avalanche energy? The maximum single pulse drain-to-source avalanche energy is 200 mJ.
  7. Is the NTD25P03L1 suitable for automotive applications? Yes, it is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  8. What is the gate threshold voltage range? The gate threshold voltage range is -1.0 to 4.0 V.
  9. What is the maximum lead temperature for soldering purposes? The maximum lead temperature for soldering purposes is 260 °C.
  10. How does the source-to-drain diode recovery time compare to other diodes? The source-to-drain diode recovery time is comparable to a discrete fast recovery diode.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:25A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 5V
Rds On (Max) @ Id, Vgs:80mOhm @ 25A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:1260 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):75W (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number NTD25P03L1 NTD25P03L1G NTD25P03LG
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta) 25A (Ta) 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V 4V, 5V 4V, 5V
Rds On (Max) @ Id, Vgs 80mOhm @ 25A, 5V 80mOhm @ 25A, 5V 80mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V 20 nC @ 5 V 20 nC @ 5 V
Vgs (Max) ±15V ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 1260 pF @ 25 V 1260 pF @ 25 V 1260 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 75W (Tj) 75W (Tj) 75W (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount
Supplier Device Package I-PAK I-PAK DPAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63

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