MMBF170LT3G
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onsemi MMBF170LT3G

Manufacturer No:
MMBF170LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 500MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The MMBF170LT3G is a single N-Channel power MOSFET produced by onsemi, designed for general usage in a variety of applications. This device is housed in a SOT-23 (TO-236) package and is RoHS compliant, ensuring environmental sustainability. It is built using onsemi's proprietary high cell density DMOS technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 60 Vdc
Drain-Gate Voltage VDGS 60 Vdc
Gate-Source Voltage VGS ±20 Vdc
Continuous Drain Current ID 0.5 A
Pulsed Drain Current IDM 0.8 A
Gate Threshold Voltage VGS(th) 0.8 - 3.0 Vdc
Static Drain-Source On-Resistance RDS(on) 5.0 Ω
Input Capacitance Ciss 24 - 40 pF
Turn-On Time ton 10 ns
Turn-Off Time toff 10 ns
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Thermal Resistance, Junction to Ambient RθJA 556 °C/W

Key Features

  • High Density Cell Design for Low RDS(ON): Minimizes on-state resistance for efficient operation.
  • Voltage Controlled Small Signal Switch: Suitable for low voltage, low current applications.
  • Rugged and Reliable: Built to withstand various operating conditions.
  • High Saturation Current Capability: Supports high current requirements.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

The MMBF170LT3G is particularly suited for a variety of applications, including:

  • Small Servo Motor Control: Ideal for controlling small servo motors due to its low voltage and current capabilities.
  • Power MOSFET Gate Drivers: Used in driving the gates of larger power MOSFETs.
  • Switching Applications: Suitable for general switching applications requiring fast and reliable performance.

Q & A

  1. What is the maximum drain-source voltage of the MMBF170LT3G?

    The maximum drain-source voltage (VDSS) is 60 Vdc.

  2. What is the continuous drain current rating of the MMBF170LT3G?

    The continuous drain current (ID) is 0.5 A.

  3. What is the gate threshold voltage range of the MMBF170LT3G?

    The gate threshold voltage (VGS(th)) ranges from 0.8 to 3.0 Vdc.

  4. What is the typical turn-on and turn-off time of the MMBF170LT3G?

    Both the turn-on and turn-off times are typically 10 ns.

  5. Is the MMBF170LT3G RoHS compliant?
  6. What is the operating and storage temperature range of the MMBF170LT3G?

    The operating and storage temperature range is -55 to +150 °C.

  7. What is the thermal resistance, junction to ambient, of the MMBF170LT3G?

    The thermal resistance, junction to ambient (RθJA), is 556 °C/W.

  8. What package type is the MMBF170LT3G available in?

    The MMBF170LT3G is available in a SOT-23 (TO-236) package.

  9. What are some typical applications of the MMBF170LT3G?

    Typical applications include small servo motor control, power MOSFET gate drivers, and other switching applications.

  10. Is the MMBF170LT3G suitable for high current applications?

    While it can handle up to 0.5 A continuously, it is more suited for low voltage, low current applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
MMBF170LT1
MMBF170LT1
MOSFET N-CH 60V 500MA SOT23-3
MMBF170LT3
MMBF170LT3
MOSFET N-CH 60V 500MA SOT23-3
MMBF170LT3G
MMBF170LT3G
MOSFET N-CH 60V 500MA SOT23-3

Similar Products

Part Number MMBF170LT3G MMBFV170LT3G MMBF170LT1G MMBF170LT3
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Active Obsolete
FET Type N-Channel - N-Channel N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V - 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta) - 500mA (Ta) 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V - 5Ohm @ 200mA, 10V 5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA - 3V @ 1mA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - - -
Vgs (Max) ±20V - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 10 V - 60 pF @ 10 V 60 pF @ 10 V
FET Feature - - - -
Power Dissipation (Max) 225mW (Ta) - 225mW (Ta) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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