MMBF170LT3
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onsemi MMBF170LT3

Manufacturer No:
MMBF170LT3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 500MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBF170LT3 is an N-channel MOSFET manufactured by onsemi, designed for surface-mount applications in a compact SOT-23-3 (TO-236) package. This MOSFET is capable of handling a drain-source voltage of up to 60V and a continuous drain current of 500mA at ambient temperature. It features a power dissipation capacity of 225mW, making it suitable for various electronic circuit designs where moderate power handling and compact size are required. Although the MMBF170LT3 is currently listed as obsolete, it remains a significant component in legacy systems and designs.

Key Specifications

Parameter Value Unit
Manufacturer onsemi
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 Vdc
Continuous Drain Current (Id) @ 25°C 500mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 10 V
Power Dissipation (Max) 225mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-3 (TO-236)

Key Features

  • Compact Package: The MMBF170LT3 is housed in a SOT-23-3 (TO-236) package, making it ideal for space-constrained designs.
  • High Voltage and Current Handling: Capable of handling up to 60V drain-source voltage and 500mA continuous drain current.
  • Low On-Resistance: Features a low on-resistance of 5 ohms at 200mA and 10V, ensuring efficient operation.
  • Wide Operating Temperature Range: Operates over a temperature range of -55°C to 150°C (TJ).
  • Input Capacitance: Has an input capacitance of 60 pF at 10V, suitable for various electronic circuit designs.

Applications

The MMBF170LT3 is suitable for a variety of applications where compact size and moderate power handling are necessary. These include:

  • Power Switching: Used in power switching circuits due to its high voltage and current handling capabilities.
  • Amplifier Circuits: Can be used in amplifier circuits requiring low on-resistance and high input impedance.
  • Automotive Systems: Although not AEC-Q101 qualified, similar models in the series are used in automotive applications requiring robust performance.
  • Consumer Electronics: Suitable for use in consumer electronics such as audio equipment, power supplies, and other electronic devices.

Q & A

  1. What is the drain-source voltage rating of the MMBF170LT3?

    The MMBF170LT3 has a drain-source voltage rating of up to 60V.

  2. What is the continuous drain current of the MMBF170LT3?

    The continuous drain current of the MMBF170LT3 is 500mA at ambient temperature.

  3. What is the on-resistance of the MMBF170LT3?

    The on-resistance of the MMBF170LT3 is 5 ohms at 200mA and 10V.

  4. What is the operating temperature range of the MMBF170LT3?

    The operating temperature range of the MMBF170LT3 is -55°C to 150°C (TJ).

  5. What package type does the MMBF170LT3 use?

    The MMBF170LT3 is housed in a SOT-23-3 (TO-236) package.

  6. Is the MMBF170LT3 RoHS compliant?

    No, the MMBF170LT3 is not RoHS compliant.

  7. What is the maximum power dissipation of the MMBF170LT3?

    The maximum power dissipation of the MMBF170LT3 is 225mW.

  8. What is the gate-source threshold voltage of the MMBF170LT3?

    The gate-source threshold voltage of the MMBF170LT3 is up to 3V at 1mA.

  9. Is the MMBF170LT3 still in production?

    No, the MMBF170LT3 is listed as obsolete.

  10. What is the input capacitance of the MMBF170LT3?

    The input capacitance of the MMBF170LT3 is 60 pF at 10V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
MMBF170LT1
MMBF170LT1
MOSFET N-CH 60V 500MA SOT23-3
MMBF170LT3
MMBF170LT3
MOSFET N-CH 60V 500MA SOT23-3
MMBF170LT3G
MMBF170LT3G
MOSFET N-CH 60V 500MA SOT23-3

Similar Products

Part Number MMBF170LT3 MMBF170LT3G MMBF170LT1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta) 500mA (Ta) 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V 5Ohm @ 200mA, 10V 5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA 3V @ 1mA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 10 V 60 pF @ 10 V 60 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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