Overview
The MMBF170LT1 is an N-Channel enhancement mode field effect transistor produced by onsemi using their proprietary, high cell density, DMOS technology. This device is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It is suitable for applications requiring up to 500 mA DC and is particularly well-suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | Vdc |
| Drain-Gate Voltage | VDGS | 60 | Vdc |
| Gate-Source Voltage - Continuous | VGS | ±20 | Vdc |
| Gate-Source Voltage - Non-repetitive (tp ≤ 50 μs) | VGSM | ±40 | Vpk |
| Drain Current - Continuous | ID | 0.5 | Adc |
| Drain Current - Pulsed | IDM | 0.8 | Adc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) | VGS(th) | 0.8 - 3.0 | Vdc |
| Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 200 mA) | rDS(on) | - 5.0 | Ω |
| Input Capacitance (VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz) | Ciss | - 60 | pF |
| Turn-On Delay Time (VDD = 25 Vdc, ID = 500 mA, Rgen = 50 Ω) | td(on) | - 10 | ns |
| Turn-Off Delay Time | td(off) | - 10 | ns |
Key Features
- High density cell design for low RDS(ON)
- Voltage controlled small signal switch
- Rugged and reliable performance
- High saturation current capability
- Pb-Free and RoHS compliant
- NVBF prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
Applications
- Small servo motor control
- Power MOSFET gate drivers
- Other switching applications
- Low voltage, low current applications
- Automotive and industrial applications requiring AEC-Q101 qualification
Q & A
- What is the maximum drain-source voltage of the MMBF170LT1?
The maximum drain-source voltage (VDSS) is 60 Vdc.
- What is the continuous drain current rating of the MMBF170LT1?
The continuous drain current (ID) is 0.5 Adc.
- What is the gate threshold voltage range of the MMBF170LT1?
The gate threshold voltage (VGS(th)) ranges from 0.8 to 3.0 Vdc.
- What is the typical on-state resistance of the MMBF170LT1?
The static drain-source on-resistance (rDS(on)) is typically up to 5.0 Ω at VGS = 10 Vdc and ID = 200 mA.
- Is the MMBF170LT1 Pb-Free and RoHS compliant?
Yes, the MMBF170LT1 is Pb-Free and RoHS compliant.
- What are the typical applications for the MMBF170LT1?
Typical applications include small servo motor control, power MOSFET gate drivers, and other switching applications.
- What is the thermal resistance, junction-to-ambient, of the MMBF170LT1?
The thermal resistance, junction-to-ambient (RJA), is 556 °C/W.
- What are the turn-on and turn-off delay times of the MMBF170LT1?
The turn-on delay time (td(on)) and turn-off delay time (td(off)) are both typically 10 ns.
- Is the MMBF170LT1 suitable for automotive applications?
Yes, the NVBF prefix version is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the package type of the MMBF170LT1?
The MMBF170LT1 is packaged in a SOT-23 (TO-236) package.
