Overview
The MMBF170LT1G is a Single N-Channel Power MOSFET produced by onsemi. This component is designed to handle high power density and low heat dissipation, making it an efficient choice for various electronic applications. It operates in enhancement mode and features built-in diode functionality, adding to its versatility in circuit design. The MOSFET is encapsulated in a SOT-23 (TO-236) 3-lead package and is fabricated using metal-oxide semiconductor (MOS) technology, ensuring reliability and performance in demanding situations.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | |
| Drain-to-Source Voltage (Vdss) | 60 | V |
| Drain-Source On Resistance (Rds On) | 5Ω @ 200mA, 10V | Ω |
| Rated Power Dissipation | 225mW | mW |
| Gate-Source Voltage (Vgss) | ±20 | V |
| Drain Current | 500mA (Ta) | mA |
| Turn-on Delay Time | 10ns | ns |
| Turn-off Delay Time | 10ns | ns |
| Operating Temperature Range | -55°C to +150°C | °C |
| Gate Source Threshold (Vgs(th)) | 3V @ 1mA | V |
| Input Capacitance (Ciss) | 60pF @ 10V | pF |
| Package Style | SOT-23 (SC-59, TO-236) | |
| Mounting Type | Surface Mount |
Key Features
- High Power Density: The MMBF170LT1G is capable of handling 60V and 500mA, making it suitable for applications requiring high power density and low heat dissipation.
- Low On-Resistance: With a maximum drain-source on-resistance of 5Ω, this MOSFET is efficient in reducing power losses and enhancing overall system performance.
- Built-in Diode Functionality: The component includes built-in diode functionality, which adds to its versatility in circuit design.
- Wide Operating Temperature Range: It operates within a temperature range of -55°C to +150°C, making it robust for use in various environmental conditions.
- Compact Package: Encapsulated in a SOT-23 (TO-236) 3-lead package, this MOSFET is ideal for space-constrained applications.
Applications
- Industrial Automation: Suitable for control systems in motors and automation machinery due to its precise switching capabilities and robust temperature range.
- Power Management: Can be used in power supply circuits, including those for renewable energy sources, where efficient power conversion is critical.
- Automotive: Applicable in electric vehicles (EVs) and hybrid systems for power management units that require high reliability and efficiency.
- Consumer Electronics: Suitable for use in portable electronics such as smartphones and laptops for power management and protection circuits.
Q & A
- What is the maximum drain-to-source voltage (Vdss) of the MMBF170LT1G?
The maximum drain-to-source voltage (Vdss) is 60V.
- What is the maximum drain-source on-resistance (Rds On) of the MMBF170LT1G?
The maximum drain-source on-resistance (Rds On) is 5Ω @ 200mA, 10V.
- What is the rated power dissipation of the MMBF170LT1G?
The rated power dissipation is 225mW.
- What is the gate-source voltage (Vgss) range of the MMBF170LT1G?
The gate-source voltage (Vgss) range is ±20V.
- What is the maximum drain current of the MMBF170LT1G?
The maximum drain current is 500mA (Ta).
- What is the operating temperature range of the MMBF170LT1G?
The operating temperature range is -55°C to +150°C.
- What is the package style of the MMBF170LT1G?
The package style is SOT-23 (SC-59, TO-236).
- What is the mounting type of the MMBF170LT1G?
The mounting type is Surface Mount.
- What are some common applications of the MMBF170LT1G?
Common applications include industrial automation, power management, automotive, and consumer electronics.
- Who is the manufacturer of the MMBF170LT1G?
The manufacturer is onsemi.
