Overview
The FQPF4N90C is an N-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. The device is suitable for various high-power applications, including switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Key Specifications
| Parameter | Unit | Min | Typ | Max |
|---|---|---|---|---|
| Drain-Source Voltage (VDSS) | V | - | - | 900 |
| Continuous Drain Current (ID) | A | - | - | 4.0 (at TC = 25°C) |
| Pulsed Drain Current (IDM) | A | - | - | 16 |
| Gate-Source Voltage (VGSS) | V | - | - | ±30 |
| Static Drain-Source On-Resistance (RDS(on)) | Ω | - | 3.5 | 4.2 (at VGS = 10 V, ID = 2 A) |
| Gate Threshold Voltage (VGS(th)) | V | 3.0 | - | 5.0 |
| Thermal Resistance, Junction-to-Case (RθJC) | °C/W | - | - | 0.89 |
| Thermal Resistance, Junction-to-Ambient (RθJA) | °C/W | - | - | 62.5 |
Key Features
- High voltage rating of 900 V and continuous drain current of 4.0 A
- Low on-state resistance (RDS(on)) of 4.2 Ω (max) at VGS = 10 V, ID = 2 A
- Low gate charge (Typ. 17 nC)
- Low Crss (Typ. 5.6 pF)
- 100% Avalanche tested
- High avalanche energy strength
- Superior switching performance
Applications
- Switched mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
Q & A
- What is the maximum drain-source voltage (VDSS) of the FQPF4N90C MOSFET?
The maximum drain-source voltage (VDSS) is 900 V.
- What is the continuous drain current (ID) rating of the FQPF4N90C at 25°C?
The continuous drain current (ID) rating is 4.0 A at 25°C.
- What is the typical gate charge (Qg) of the FQPF4N90C?
The typical gate charge (Qg) is 17 nC.
- What are the thermal resistance values for the FQPF4N90C?
The thermal resistance from junction to case (RθJC) is 0.89 °C/W, and from junction to ambient (RθJA) is 62.5 °C/W.
- What are the typical applications of the FQPF4N90C MOSFET?
The typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
- What is the maximum gate-source voltage (VGSS) rating?
The maximum gate-source voltage (VGSS) rating is ±30 V.
- What is the static drain-source on-resistance (RDS(on)) at VGS = 10 V and ID = 2 A?
The static drain-source on-resistance (RDS(on)) is 4.2 Ω (max) at VGS = 10 V and ID = 2 A.
- Is the FQPF4N90C 100% avalanche tested?
Yes, the FQPF4N90C is 100% avalanche tested.
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 300°C for 5 seconds.
- What is the operating and storage temperature range for the FQPF4N90C?
The operating and storage temperature range is -55 to +150°C.
