Overview
The FQPF4N90CT is an N-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance, enhance switching performance, and provide high avalanche energy strength. The device is particularly suited for applications in switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 900 | V |
| Drain Current (ID) - Continuous (TC = 25°C) | 4 | A |
| Drain Current (ID) - Continuous (TC = 100°C) | 2.3 | A |
| On-State Resistance (RDS(on)) | 4.2 Ω (Max.) @ VGS = 10 V, ID = 2 A | Ω |
| Gate Charge (Qg) | 17 nC (Typ.) | nC |
| Gate-Source Charge (Qgs) | 4.5 nC (Typ.) | nC |
| Gate-Drain Charge (Qgd) | 7.5 nC (Typ.) | nC |
| Thermal Resistance, Junction-to-Case (RθJC) | 0.89 °C/W (Max.) | °C/W |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 62.5 °C/W (Max.) | °C/W |
Key Features
- High voltage rating of 900 V and high current capability of 4 A.
- Low on-state resistance (RDS(on)) of 4.2 Ω (Max.) @ VGS = 10 V, ID = 2 A.
- Low gate charge (Typ. 17 nC) and low Crss (Typ. 5.6 pF).
- 100% avalanche tested for robustness.
- Superior switching performance and high avalanche energy strength.
Applications
- Switched mode power supplies.
- Active power factor correction (PFC).
- Electronic lamp ballasts.
- LCD and LED TVs.
- Desktop PCs and AC-DC merchant power supplies.
Q & A
- What is the maximum drain-source voltage (VDSS) of the FQPF4N90CT?
The maximum drain-source voltage (VDSS) is 900 V.
- What is the continuous drain current (ID) at 25°C and 100°C?
The continuous drain current (ID) is 4 A at 25°C and 2.3 A at 100°C.
- What is the on-state resistance (RDS(on)) of the FQPF4N90CT?
The on-state resistance (RDS(on)) is 4.2 Ω (Max.) @ VGS = 10 V, ID = 2 A.
- What are the typical values for gate charge (Qg), gate-source charge (Qgs), and gate-drain charge (Qgd)?
The typical values are 17 nC for Qg, 4.5 nC for Qgs, and 7.5 nC for Qgd.
- What is the thermal resistance from junction to case (RθJC) and junction to ambient (RθJA)?
The thermal resistance from junction to case (RθJC) is 0.89 °C/W (Max.), and from junction to ambient (RθJA) is 62.5 °C/W (Max.).
- What are the primary applications of the FQPF4N90CT?
The primary applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
- Is the FQPF4N90CT 100% avalanche tested?
Yes, the FQPF4N90CT is 100% avalanche tested.
- What is the package type of the FQPF4N90CT?
The package type is TO-220F.
- What are some of the consumer electronics that use the FQPF4N90CT?
It is used in LCD and LED TVs, desktop PCs, and AC-DC merchant power supplies.
- What technology is used to produce the FQPF4N90CT?
The FQPF4N90CT is produced using onsemi’s proprietary planar stripe and DMOS technology.
