Overview
The FQPF9N90CT is an N-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. The device is suitable for various high-power applications, including switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Key Specifications
| Parameter | Symbol | Min | Max | Units | |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | - | - | 900 | V |
| Continuous Drain Current (TC = 25°C) | ID | - | - | 8.0 | A |
| Continuous Drain Current (TC = 100°C) | ID | - | - | 2.8 | A |
| Pulsed Drain Current | IDM | - | - | 32 | A |
| Gate-Source Voltage | VGSS | - | - | ±30 | V |
| Single Pulsed Avalanche Energy | EAS | - | - | 900 | mJ |
| Avalanche Current | IAR | - | - | 8.0 | A |
| Repetitive Avalanche Energy | EAR | - | - | 20.5 | mJ |
| Peak Diode Recovery dv/dt | dv/dt | - | - | 4.0 | V/ns |
| Power Dissipation (TC = 25°C) | PD | - | - | 205 | W |
| Thermal Resistance, Junction-to-Case | RθJC | - | - | 1.85 | °C/W |
| Gate to Source Threshold Voltage | VGS(th) | 3.0 | - | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(on) | - | 1.12 | 1.4 | Ω |
| Total Gate Charge | Qg | - | 45 | 58 | nC |
Key Features
- High voltage rating of 900 V and continuous drain current of 8.0 A at TC = 25°C
- Low on-state resistance (RDS(on)) of 1.4 Ω (max.) at VGS = 10 V, ID = 4 A
- Low gate charge (typ. 45 nC)
- Low Crss (typ. 14 pF)
- 100% avalanche tested
- Pb-free, halide-free, and RoHS compliant
Applications
- Switched mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
Q & A
- What is the maximum drain-source voltage of the FQPF9N90CT MOSFET?
The maximum drain-source voltage (VDSS) is 900 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 8.0 A.
- What is the typical total gate charge of the FQPF9N90CT?
The typical total gate charge (Qg) is 45 nC.
- Is the FQPF9N90CT Pb-free and RoHS compliant?
Yes, the device is Pb-free, halide-free, and RoHS compliant.
- What are the typical applications for the FQPF9N90CT?
The device is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
- What is the maximum junction temperature for the FQPF9N90CT?
The maximum junction temperature (TJ) is 175°C.
- What is the thermal resistance from junction to case for the FQPF9N90CT?
The thermal resistance from junction to case (RθJC) is 1.85 °C/W.
- What is the gate-source threshold voltage range for the FQPF9N90CT?
The gate-source threshold voltage (VGS(th)) range is from 3.0 V to 5.0 V.
- What is the maximum power dissipation at 25°C for the FQPF9N90CT?
The maximum power dissipation (PD) at 25°C is 205 W.
- What is the peak diode recovery dv/dt for the FQPF9N90CT?
The peak diode recovery dv/dt is 4.0 V/ns.
