Overview
The FQP4N90C is an N-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. The device is well-suited for high-efficiency switch mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Key Specifications
| Parameter | Unit | Min | Typ | Max |
|---|---|---|---|---|
| Drain-Source Voltage (VDSS) | V | - | - | 900 |
| Drain Current (ID) - Continuous (TC = 25°C) | A | - | - | 4 |
| Drain Current (ID) - Continuous (TC = 100°C) | A | - | - | 2.3 |
| Drain Current (IDM) - Pulsed | A | - | - | 16 |
| Gate-Source Voltage (VGSS) | V | - | - | ±30 |
| Static Drain-Source On-Resistance (RDS(on)) @ VGS = 10 V, ID = 2 A | Ω | 3.5 | - | 4.2 |
| Thermal Resistance, Junction-to-Case (RθJC) | °C/W | - | - | 0.89 |
| Thermal Resistance, Junction-to-Ambient (RθJA) | °C/W | - | - | 62.5 |
Key Features
- 4.0 A, 900 V, RDS(on) = 4.2 Ω (Max.) @ VGS = 10 V, ID = 2.0 A
- Low Gate Charge (Typ. 17 nC)
- Low Crss (Typ. 5.6 pF)
- Fast switching
- 100% Avalanche Tested
- Improved dv/dt capability
Applications
The FQP4N90C is suitable for various high-efficiency applications, including:
- Switched mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
Q & A
- What is the maximum drain-source voltage of the FQP4N90C?
The maximum drain-source voltage (VDSS) is 900 V. - What is the continuous drain current at 25°C and 100°C?
The continuous drain current is 4 A at 25°C and 2.3 A at 100°C. - What is the typical gate charge of the FQP4N90C?
The typical gate charge is 17 nC. - What are the thermal resistances of the FQP4N90C?
The thermal resistance from junction to case (RθJC) is 0.89 °C/W, and the thermal resistance from junction to ambient (RθJA) is 62.5 °C/W. - Is the FQP4N90C 100% avalanche tested?
Yes, the FQP4N90C is 100% avalanche tested. - What are the typical applications of the FQP4N90C?
The typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. - What is the maximum gate-source voltage?
The maximum gate-source voltage (VGSS) is ±30 V. - What is the static drain-source on-resistance (RDS(on)) at VGS = 10 V and ID = 2 A?
The static drain-source on-resistance (RDS(on)) is 4.2 Ω (Max.) at VGS = 10 V and ID = 2 A. - What is the peak diode recovery dv/dt?
The peak diode recovery dv/dt is 4.5 V/ns. - What is the operating and storage temperature range?
The operating and storage temperature range is -55°C to +150°C.
