Overview
The onsemi FQD11P06TM is a P-Channel enhancement mode power MOSFET, designed and manufactured using onsemi's proprietary high cell density DMOS technology. This technology minimizes on-state resistance, providing a rugged and reliable performance for fast switching applications. The MOSFET is packaged in a 3-pin DPAK (TO-252) surface mount package, making it suitable for a variety of power management and control applications.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Type | P-Channel |
| Maximum Continuous Drain Current | 9.4 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 185 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2 V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Length | 6.6 mm |
| Width | 6.1 mm |
| Height | 2.3 mm |
| Transistor Material | Silicon (Si) |
Key Features
- Voltage controlled P-Channel small signal switch
- High-Density cell design
- High saturation current
- Superior switching performance
- Rugged and reliable performance
- DMOS technology for minimized on-state resistance
Applications
- Load Switching
- DC/DC converters
- Battery protection
- Power management control
- DC motor control
Q & A
- What is the maximum continuous drain current of the FQD11P06TM MOSFET?
The maximum continuous drain current is 9.4 A. - What is the maximum drain source voltage of the FQD11P06TM MOSFET?
The maximum drain source voltage is 60 V. - What package type is the FQD11P06TM MOSFET available in?
The FQD11P06TM MOSFET is available in a 3-pin DPAK (TO-252) package. - What is the minimum gate threshold voltage of the FQD11P06TM MOSFET?
The minimum gate threshold voltage is 2 V. - What is the maximum power dissipation of the FQD11P06TM MOSFET?
The maximum power dissipation is 2.5 W. - What are the typical operating temperatures for the FQD11P06TM MOSFET?
The typical operating temperatures range from -55 °C to +150 °C. - What is the maximum drain source resistance of the FQD11P06TM MOSFET?
The maximum drain source resistance is 185 mΩ. - What technology is used in the FQD11P06TM MOSFET?
The FQD11P06TM MOSFET is produced using onsemi's proprietary high cell density DMOS technology. - What are some common applications of the FQD11P06TM MOSFET?
Common applications include load switching, DC/DC converters, battery protection, power management control, and DC motor control. - What is the typical gate charge at Vgs for the FQD11P06TM MOSFET?
The typical gate charge at Vgs is 13 nC @ 10 V.
