Overview
The FQD17P06TM is a P-Channel enhancement mode power MOSFET produced by onsemi, utilizing Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced technology reduces on-state resistance and provides superior switching performance along with high avalanche energy strength. The device is suitable for a variety of applications requiring high current and voltage handling capabilities.
Key Specifications
| Parameter | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|
| Drain-Source Voltage (VDSS) | - | - | -60 | V |
| Continuous Drain Current (ID) at TC = 25°C | - | - | -12 | A |
| Continuous Drain Current (ID) at TC = 100°C | - | - | -7.6 | A |
| Pulsed Drain Current (IDM) | - | - | -48 | A |
| Gate-Source Voltage (VGSS) | - | - | ±25 | V |
| Single Pulsed Avalanche Energy (EAS) | - | - | 300 | mJ |
| Power Dissipation (PD) at TA = 25°C | - | - | 2.5 | W |
| Thermal Resistance, Junction-to-Case (RθJC) | - | - | 2.85 | °C/W |
| On-State Resistance (RDS(on)) at VGS = -10 V, ID = -6 A | - | 0.11 | 0.135 | Ω |
Key Features
- Low on-state resistance (RDS(on)) of 0.11 Ω (typ.) at VGS = -10 V, ID = -6 A.
- Low gate charge (Qg) of 21 nC (typ.).
- Low Crss (reverse transfer capacitance) of 80 pF (typ.).
- High avalanche energy strength and 100% avalanche tested.
- Operating and storage temperature range of -55°C to +150°C.
- High current handling capability with continuous drain current of -12 A at TC = 25°C.
Applications
- Switched mode power supplies.
- Audio amplifiers.
- DC motor control.
- Variable switching power applications.
Q & A
- What is the maximum drain-source voltage (VDSS) of the FQD17P06TM?
The maximum drain-source voltage (VDSS) is -60 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is -12 A.
- What is the typical on-state resistance (RDS(on))?
The typical on-state resistance (RDS(on)) is 0.11 Ω at VGS = -10 V, ID = -6 A.
- What are the key features of the FQD17P06TM MOSFET?
The key features include low on-state resistance, low gate charge, low Crss, high avalanche energy strength, and a wide operating temperature range).
- What are the typical applications of the FQD17P06TM?
The typical applications include switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications).
- What is the thermal resistance, junction-to-case (RθJC)?
The thermal resistance, junction-to-case (RθJC) is 2.85 °C/W).
- What is the maximum power dissipation (PD) at TA = 25°C?
The maximum power dissipation (PD) at TA = 25°C is 2.5 W).
- What is the gate-source voltage (VGSS) rating?
The gate-source voltage (VGSS) rating is ±25 V).
- What is the single pulsed avalanche energy (EAS)?
The single pulsed avalanche energy (EAS) is 300 mJ).
- What are the package options for the FQD17P06TM?
The FQD17P06TM is available in TO252 (D-PAK) and TO251 (I-PAK) packages).
