Overview
The FDN337N-F169 is an N-Channel, logic level, enhancement mode field effect transistor produced by onsemi. This transistor is fabricated using onsemi's proprietary, high cell density, DMOS technology, which is designed to minimize on-state resistance. The device is particularly suited for low voltage applications in devices such as notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching and low in-line power loss are critical.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (V_DS) | 30 | V |
| Drain Current (I_D) | 2.2 | A |
| On-Resistance (R_DS(on)) @ V_GS = 4.5 V | 0.065 | Ω |
| On-Resistance (R_DS(on)) @ V_GS = 2.5 V | 0.082 | Ω |
| Gate-Source Voltage (V_GS) | ±8 | V |
| Gate Threshold Voltage (V_gs(th)) | 1 | V |
| Thermal Resistance, Junction-to-Ambient | 250 | °C/W |
| Thermal Resistance, Junction-to-Case | 75 | °C/W |
| Package Type | SOT-23-3 |
Key Features
- High density cell design for extremely low R_DS(on)
- Exceptional on-resistance and maximum DC current capability
- Industry standard outline SOT-23 surface mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities
- Fast switching and low in-line power loss, making it suitable for battery-powered circuits
Applications
The FDN337N-F169 is suitable for a variety of applications, including:
- Notebook computers
- Portable phones
- PCMCIA cards
- Other battery-powered circuits where fast switching and low power loss are essential
Q & A
- What is the maximum drain-source voltage of the FDN337N-F169?
The maximum drain-source voltage is 30 V. - What is the maximum drain current of the FDN337N-F169?
The maximum drain current is 2.2 A. - What is the on-resistance of the FDN337N-F169 at V_GS = 4.5 V?
The on-resistance is 0.065 Ω at V_GS = 4.5 V. - What is the on-resistance of the FDN337N-F169 at V_GS = 2.5 V?
The on-resistance is 0.082 Ω at V_GS = 2.5 V. - What is the package type of the FDN337N-F169?
The package type is SOT-23-3. - What are the typical applications of the FDN337N-F169?
Typical applications include notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits. - What technology is used to fabricate the FDN337N-F169?
The FDN337N-F169 is fabricated using onsemi's proprietary, high cell density, DMOS technology. - What are the thermal resistance values for the FDN337N-F169?
The thermal resistance, junction-to-ambient, is 250 °C/W, and the thermal resistance, junction-to-case, is 75 °C/W. - Is the FDN337N-F169 still in production?
No, the FDN337N-F169 is no longer manufactured and is listed as obsolete. - Where can I find substitutes for the FDN337N-F169?
You can find substitutes on the onsemi website or through distributors like Digi-Key.
