FDMC86260ET150
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onsemi FDMC86260ET150

Manufacturer No:
FDMC86260ET150
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 5.4A/25A PWR33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC86260ET150 is an N-Channel Power Trench® MOSFET produced by onsemi. This device is part of the Power33 package family, known for its high performance and reliability in various power management applications. The MOSFET is designed to handle high current and voltage requirements, making it suitable for a range of industrial and consumer electronics.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (VDS)150V
Gate to Source Voltage (VGS)±20V
Continuous Drain Current (ID)5.4 A (TA), 25 A (TC)A
Power Dissipation (PD)2.8 W (TA), 65 W (TC)W
Package TypePower33

Key Features

  • High current capability: Up to 5.4 A at ambient temperature and 25 A at case temperature.
  • High voltage rating: 150 V drain to source voltage.
  • Low on-resistance: Enhances efficiency in power management applications.
  • Power33 package: Compact and thermally efficient package design.
  • High reliability: Designed for long-term performance in demanding environments.

Applications

The FDMC86260ET150 is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Consumer electronics such as power tools and appliances.
  • Automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain to source voltage of the FDMC86260ET150?
    The maximum drain to source voltage is 150 V.
  2. What is the continuous drain current rating of the FDMC86260ET150?
    The continuous drain current is 5.4 A at ambient temperature and 25 A at case temperature.
  3. What is the power dissipation capability of the FDMC86260ET150?
    The power dissipation is 2.8 W at ambient temperature and 65 W at case temperature.
  4. What package type is the FDMC86260ET150 available in?
    The FDMC86260ET150 is available in the Power33 package.
  5. What are some common applications for the FDMC86260ET150?
    Common applications include power supplies, motor control systems, industrial automation, consumer electronics, and automotive systems.
  6. What is the maximum gate to source voltage for the FDMC86260ET150?
    The maximum gate to source voltage is ±20 V.
  7. Why is the Power33 package beneficial?
    The Power33 package is beneficial due to its compact and thermally efficient design, which enhances performance and reliability in power management applications.
  8. Is the FDMC86260ET150 suitable for high-current applications?
    Yes, the FDMC86260ET150 is designed to handle high current requirements, making it suitable for high-current applications.
  9. What are the key features of the FDMC86260ET150?
    Key features include high current capability, high voltage rating, low on-resistance, and high reliability.
  10. Where can I purchase the FDMC86260ET150?
    The FDMC86260ET150 can be purchased from various electronic component distributors such as Digi-Key, Mouser, and Avnet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:34mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1330 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerWDFN
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