FDMC86260ET150
  • Share:

onsemi FDMC86260ET150

Manufacturer No:
FDMC86260ET150
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 5.4A/25A PWR33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC86260ET150 is an N-Channel Power Trench® MOSFET produced by onsemi. This device is part of the Power33 package family, known for its high performance and reliability in various power management applications. The MOSFET is designed to handle high current and voltage requirements, making it suitable for a range of industrial and consumer electronics.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (VDS)150V
Gate to Source Voltage (VGS)±20V
Continuous Drain Current (ID)5.4 A (TA), 25 A (TC)A
Power Dissipation (PD)2.8 W (TA), 65 W (TC)W
Package TypePower33

Key Features

  • High current capability: Up to 5.4 A at ambient temperature and 25 A at case temperature.
  • High voltage rating: 150 V drain to source voltage.
  • Low on-resistance: Enhances efficiency in power management applications.
  • Power33 package: Compact and thermally efficient package design.
  • High reliability: Designed for long-term performance in demanding environments.

Applications

The FDMC86260ET150 is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Consumer electronics such as power tools and appliances.
  • Automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain to source voltage of the FDMC86260ET150?
    The maximum drain to source voltage is 150 V.
  2. What is the continuous drain current rating of the FDMC86260ET150?
    The continuous drain current is 5.4 A at ambient temperature and 25 A at case temperature.
  3. What is the power dissipation capability of the FDMC86260ET150?
    The power dissipation is 2.8 W at ambient temperature and 65 W at case temperature.
  4. What package type is the FDMC86260ET150 available in?
    The FDMC86260ET150 is available in the Power33 package.
  5. What are some common applications for the FDMC86260ET150?
    Common applications include power supplies, motor control systems, industrial automation, consumer electronics, and automotive systems.
  6. What is the maximum gate to source voltage for the FDMC86260ET150?
    The maximum gate to source voltage is ±20 V.
  7. Why is the Power33 package beneficial?
    The Power33 package is beneficial due to its compact and thermally efficient design, which enhances performance and reliability in power management applications.
  8. Is the FDMC86260ET150 suitable for high-current applications?
    Yes, the FDMC86260ET150 is designed to handle high current requirements, making it suitable for high-current applications.
  9. What are the key features of the FDMC86260ET150?
    Key features include high current capability, high voltage rating, low on-resistance, and high reliability.
  10. Where can I purchase the FDMC86260ET150?
    The FDMC86260ET150 can be purchased from various electronic component distributors such as Digi-Key, Mouser, and Avnet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:34mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1330 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$1.11
889

Please send RFQ , we will respond immediately.

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD