FDMA510PZ
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onsemi FDMA510PZ

Manufacturer No:
FDMA510PZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 7.8A 6MICROFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMA510PZ is a P-Channel PowerTrench MOSFET designed and manufactured by onsemi. This device is specifically tailored for use in battery charge or load switching applications, particularly in cellular handsets and other ultraportable devices. It is known for its high efficiency and reliability in managing power in compact electronic systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-20 V
ID (Drain Current)7.8 A (at Ta)
PD (Power Dissipation)2.4 W (at Ta)
VGS(th) (Gate-Source Threshold Voltage)-1 to -2.5 V
RDS(on) (Drain-Source On-Resistance)Typically 0.12 Ω
IS (Maximum Continuous Drain-Source Diode Forward Current)-2 A
VSD (Source to Drain Diode Forward Voltage)Typically 1.2 V

Key Features

  • P-Channel MOSFET with PowerTrench technology for enhanced performance.
  • Low on-resistance (RDS(on)) of typically 0.12 Ω.
  • High drain current capability of up to 7.8 A at ambient temperature.
  • Compact surface mount package suitable for ultraportable applications.
  • Robust and reliable operation in battery charge and load switching scenarios.

Applications

The FDMA510PZ is primarily used in battery charge or load switching applications, especially in:

  • Cellular handsets and other mobile devices.
  • Ultraportable electronic devices requiring efficient power management.
  • Power management circuits in compact electronic systems.

Q & A

  1. What is the drain-source voltage rating of the FDMA510PZ?
    The drain-source voltage rating is -20 V.
  2. What is the maximum drain current of the FDMA510PZ at ambient temperature?
    The maximum drain current is 7.8 A at ambient temperature.
  3. What is the typical on-resistance of the FDMA510PZ?
    The typical on-resistance is 0.12 Ω.
  4. What is the maximum continuous drain-source diode forward current?
    The maximum continuous drain-source diode forward current is -2 A.
  5. What type of package does the FDMA510PZ come in?
    The FDMA510PZ comes in a compact surface mount package.
  6. Is the FDMA510PZ suitable for use in ultraportable devices?
    Yes, it is specifically designed for use in ultraportable devices such as cellular handsets.
  7. What is the power dissipation rating of the FDMA510PZ at ambient temperature?
    The power dissipation rating is 2.4 W at ambient temperature.
  8. What is the gate-source threshold voltage range of the FDMA510PZ?
    The gate-source threshold voltage range is -1 to -2.5 V.
  9. Is the FDMA510PZ scheduled for obsolescence?
    Yes, the FDMA510PZ is scheduled for obsolescence and will be discontinued by the manufacturer.
  10. Where can I find the datasheet and other resources for the FDMA510PZ?
    You can find the datasheet and other resources such as schematic symbols, PCB footprints, and 3D models on websites like Mouser Electronics and SnapEDA.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:7.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:30mOhm @ 7.8A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1480 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-MicroFET (2x2)
Package / Case:6-WDFN Exposed Pad
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Similar Products

Part Number FDMA510PZ FDMA530PZ FDMA910PZ FDMA520PZ
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 7.8A (Ta) 6.8A (Ta) 9.4A (Ta) 7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 4.5V, 10V 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 7.8A, 4.5V 35mOhm @ 6.8A, 10V 20mOhm @ 9.4A, 4.5V 30mOhm @ 7.3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 3V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V 24 nC @ 10 V 29 nC @ 4.5 V 20 nC @ 4.5 V
Vgs (Max) ±8V ±25V ±8V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 10 V 1070 pF @ 15 V 2805 pF @ 10 V 1645 pF @ 10 V
FET Feature - - - -
Power Dissipation (Max) 2.4W (Ta) 2.4W (Ta) 2.4W (Ta) 2.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-MicroFET (2x2) 6-MicroFET (2x2) 6-MicroFET (2x2) 6-MicroFET (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad 6-WDFN Exposed Pad 6-WDFN Exposed Pad

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