FDMA910PZ
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onsemi FDMA910PZ

Manufacturer No:
FDMA910PZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 9.4A 6MICROFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMA910PZ is a P-Channel MOSFET designed and manufactured by onsemi. This device is specifically tailored for use in battery charge or load switching applications, particularly in cellular handsets and other ultraportable devices. Its compact design and efficient performance make it an ideal choice for space-constrained and power-sensitive applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)20 V
Current Rating (Id)9.4 A (Ta)
Power Dissipation (Pd)2.4 W (Ta)
Package TypeSurface Mount 6-MicroFET (2x2)
Channel TypeP-Channel

Key Features

  • Compact 2x2 mm surface mount package, ideal for space-constrained designs.
  • Low on-resistance, reducing power losses and improving efficiency.
  • High current handling capability, suitable for demanding applications.
  • Low thermal resistance, enhancing heat dissipation and reliability.

Applications

The FDMA910PZ is primarily used in battery charge or load switching applications within cellular handsets and other ultraportable devices. Its use can also extend to other portable electronics where efficient power management and compact design are crucial.

Q & A

  1. What is the voltage rating of the FDMA910PZ MOSFET?
    The voltage rating of the FDMA910PZ MOSFET is 20 V.
  2. What is the current rating of the FDMA910PZ MOSFET?
    The current rating of the FDMA910PZ MOSFET is 9.4 A at ambient temperature (Ta).
  3. What is the power dissipation of the FDMA910PZ MOSFET?
    The power dissipation of the FDMA910PZ MOSFET is 2.4 W at ambient temperature (Ta).
  4. What type of package does the FDMA910PZ MOSFET use?
    The FDMA910PZ MOSFET uses a surface mount 6-MicroFET (2x2) package.
  5. What is the channel type of the FDMA910PZ MOSFET?
    The FDMA910PZ MOSFET is a P-Channel MOSFET.
  6. What are the primary applications of the FDMA910PZ MOSFET?
    The primary applications include battery charge or load switching in cellular handsets and other ultraportable devices.
  7. Why is the FDMA910PZ MOSFET suitable for portable electronics?
    The FDMA910PZ MOSFET is suitable due to its compact design, low on-resistance, and high current handling capability.
  8. Where can I find detailed specifications for the FDMA910PZ MOSFET?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key.
  9. What are the benefits of using the FDMA910PZ MOSFET in power management?
    The benefits include efficient power management, reduced power losses, and enhanced reliability due to its low thermal resistance.
  10. Is the FDMA910PZ MOSFET available for immediate shipment?
    Yes, the FDMA910PZ MOSFET is available for immediate shipment from various distributors.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:20mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2805 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-MicroFET (2x2)
Package / Case:6-WDFN Exposed Pad
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In Stock

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Similar Products

Part Number FDMA910PZ FDMA510PZ
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta) 7.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 20mOhm @ 9.4A, 4.5V 30mOhm @ 7.8A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 4.5 V 27 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 2805 pF @ 10 V 1480 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 2.4W (Ta) 2.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-MicroFET (2x2) 6-MicroFET (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad

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