Overview
The FCPF850N80Z is a high-voltage N-Channel MOSFET from onsemi, part of the SuperFET® II family. This MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and offer higher avalanche energy. The device also features an internal gate-source ESD diode that can withstand over 2 kV HBM surge stress, making it highly suitable for various switching power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 800 | V |
| Gate to Source Voltage (VGS) | ±20 (DC), ±30 (AC) | V |
| Drain Current (ID) - Continuous (TC = 25°C) | 8.0 | A |
| Drain Current (ID) - Continuous (TC = 100°C) | 5.1 | A |
| Drain Current (ID) - Pulsed | 18 | A |
| Static Drain to Source On Resistance (RDS(on)) at VGS = 10 V | 710 - 850 | mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.5 - 4.5 | V |
| Total Gate Charge (Qg) at VGS = 10 V | 22 - 29 | nC |
| Input Capacitance (Ciss) | 990 - 1315 | pF |
| Output Capacitance (Coss) | 28 - 37 | pF |
| Effective Output Capacitance (Coss(eff.)) | 106 | pF |
| Operating and Storage Temperature Range | -55 to +150 | °C |
| Maximum Lead Temperature for Soldering | 300 | °C |
Key Features
- Typical RDS(on)= 710 mΩ at VGS = 10 V
- Ultra Low Gate Charge (Typ. Qg = 22 nC)
- Low Eoss (Typ. 2.3 μJ @ 400 V)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
- 100% Avalanche Tested
- ESD Improved Capability (withstands over 2 kV HBM surge stress)
- RoHS Compliant
Applications
- AC-DC Power Supplies
- LED Lighting
- Laptop Adapters
- ATX Power Supplies
- Industrial Power Applications
Q & A
- What is the maximum drain to source voltage (VDSS) of the FCPF850N80Z MOSFET?
The maximum drain to source voltage (VDSS) is 800 V.
- What is the typical on-resistance (RDS(on)) of the FCPF850N80Z MOSFET?
The typical on-resistance (RDS(on)) is 710 mΩ at VGS = 10 V.
- What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 8.0 A.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is 2.5 to 4.5 V.
- What is the total gate charge (Qg) at VGS = 10 V?
The total gate charge (Qg) at VGS = 10 V is typically 22 nC.
- Is the FCPF850N80Z MOSFET RoHS compliant?
Yes, the FCPF850N80Z MOSFET is RoHS compliant.
- What are the typical applications of the FCPF850N80Z MOSFET?
The typical applications include AC-DC power supplies, LED lighting, laptop adapters, ATX power supplies, and industrial power applications.
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 300°C.
- What is the operating and storage temperature range of the FCPF850N80Z MOSFET?
The operating and storage temperature range is -55 to +150°C.
- Does the FCPF850N80Z MOSFET have improved ESD capability?
Yes, it has improved ESD capability, withstanding over 2 kV HBM surge stress.
