FCPF850N80Z
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onsemi FCPF850N80Z

Manufacturer No:
FCPF850N80Z
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 800V 6A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCPF850N80Z is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET II family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss and provide superior switching performance, making it highly suitable for various switching power applications.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 800 V
Gate to Source Voltage (VGSS) ±20 (DC), ±30 (AC, f > 1 Hz) V
Continuous Drain Current (ID) 8.0 A (TC = 25°C), 5.1 A (TC = 100°C) A
Pulsed Drain Current (IDM) 18 A A
Single Pulsed Avalanche Energy (EAS) 114 mJ mJ
Power Dissipation (PD) 28.4 W (TC = 25°C), Derate above 25°C: 0.24 W/°C W
Operating and Storage Temperature Range (TJ, TSTG) -55 to +150 °C °C
Maximum Lead Temperature for Soldering 300 °C °C
Static Drain to Source On Resistance (RDS(on)) 710 mΩ (Typ.) at VGS = 10 V, ID = 3 A
Total Gate Charge (Qg) 22 nC (Typ.) at VGS = 10 V, VDS = 640 V, ID = 6 A nC
Effective Output Capacitance (Coss(eff.)) 106 pF (Typ.) pF

Key Features

  • Typical RDS(on) = 710 mΩ at VGS = 10 V, ID = 3 A
  • Ultra Low Gate Charge (Typ. Qg = 22 nC)
  • Low Eoss (Typ. 2.3 μJ @ 400 V)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
  • 100% Avalanche Tested
  • ESD Improved Capacity (withstands over 2 kV HBM surge stress)
  • RoHS Compliant

Applications

  • AC-DC Power Supply
  • LED Lighting
  • Audio Power Applications
  • Laptop Adapters
  • ATX Power Supplies
  • Industrial Power Applications

Q & A

  1. What is the maximum drain to source voltage of the FCPF850N80Z?

    The maximum drain to source voltage (VDSS) is 800 V.

  2. What is the typical on-resistance of the FCPF850N80Z?

    The typical static drain to source on-resistance (RDS(on)) is 710 mΩ at VGS = 10 V, ID = 3 A.

  3. What is the maximum continuous drain current of the FCPF850N80Z at 25°C?

    The maximum continuous drain current (ID) is 8.0 A at TC = 25°C.

  4. Is the FCPF850N80Z RoHS compliant?

    Yes, the FCPF850N80Z is RoHS compliant.

  5. What are some typical applications of the FCPF850N80Z?

    Typical applications include AC-DC power supplies, LED lighting, audio power applications, laptop adapters, ATX power supplies, and industrial power applications.

  6. What is the thermal resistance from junction to case (RθJC) of the FCPF850N80Z?

    The thermal resistance from junction to case (RθJC) is 4.4 °C/W.

  7. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 300 °C.

  8. Does the FCPF850N80Z have ESD protection?

    Yes, it has an internal gate-source ESD diode that withstands over 2 kV HBM surge stress.

  9. What is the typical total gate charge of the FCPF850N80Z?

    The typical total gate charge (Qg) is 22 nC at VGS = 10 V, VDS = 640 V, ID = 6 A.

  10. What is the effective output capacitance of the FCPF850N80Z?

    The effective output capacitance (Coss(eff.)) is typically 106 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1315 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):28.4W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number FCPF850N80Z FCP850N80Z FCPF650N80Z
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 8A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 3A, 10V 850mOhm @ 3A, 10V 650mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 600µA 4.5V @ 600µA 4.5V @ 800µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 29 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1315 pF @ 100 V 1315 pF @ 100 V 1565 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 28.4W (Tc) 136W (Tc) 30.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220F-3 TO-220-3 TO-220F-3
Package / Case TO-220-3 Full Pack TO-220-3 TO-220-3 Full Pack

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