PMV48XPA2R
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Nexperia USA Inc. PMV48XPA2R

Manufacturer No:
PMV48XPA2R
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 4A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV48XPA2R is a 20 V, P-channel Trench MOSFET produced by Nexperia USA Inc. This automotive-qualified, enhancement mode Field-Effect Transistor (FET) is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD). The device is designed to offer high efficiency and reliability, making it suitable for a wide range of applications across various industries.

Key Specifications

Parameter Value
Type Number PMV48XPA2
Package SOT23 (TO-236AB)
Channel Type P-channel
V DS [max] (V) -20
R DSon [max] @ V GS = 4.5 V; @25 C (mΩ) 55
T j [max] (°C) 175
I D [max] (A) -4
Q GD [typ] (nC) 2.3
Q G(tot) [typ] @ V GS = 4.5 V (nC) 7
P tot [max] (W) 2
V GSth [typ] (V) -0.95
Automotive Qualified Yes (AEC-Q101 qualified)
C iss [typ] (pF) 679
C oss [typ] (pF) 87

Key Features

  • Logic-level compatible
  • Trench MOSFET technology for high efficiency and fast switching
  • AEC-Q101 qualified for automotive applications
  • High-side load switch and high-speed line driver capabilities
  • Relay driver and switching circuits applications
  • Small SOT23 package for compact designs

Applications

  • Automotive electronics: e-mobility, safety, and efficiency improvements
  • Industrial applications: power miniaturization, system reliability, and energy efficiency
  • Power management: high-side load switching, high-speed line driving, and relay driving
  • Consumer and mobile devices: efficient power management and switching circuits
  • Wearables and computing: compact and efficient power solutions

Q & A

  1. What is the maximum drain-to-source voltage (V DS) of the PMV48XPA2R?

    The maximum drain-to-source voltage (V DS) is -20 V.

  2. What is the typical on-resistance (R DSon) at V GS = 4.5 V and 25°C?

    The typical on-resistance (R DSon) is 55 mΩ.

  3. Is the PMV48XPA2R automotive qualified?

    Yes, it is AEC-Q101 qualified.

  4. What is the maximum junction temperature (T j) of the PMV48XPA2R?

    The maximum junction temperature (T j) is 175°C.

  5. What are the typical gate-drain charge (Q GD) and total gate charge (Q G(tot)) values?

    The typical gate-drain charge (Q GD) is 2.3 nC, and the total gate charge (Q G(tot)) at V GS = 4.5 V is 7 nC.

  6. What is the maximum total power dissipation (P tot) of the PMV48XPA2R?

    The maximum total power dissipation (P tot) is 2 W.

  7. What is the typical threshold voltage (V GSth) of the PMV48XPA2R?

    The typical threshold voltage (V GSth) is -0.95 V.

  8. What are the typical input capacitance (C iss) and output capacitance (C oss) values?

    The typical input capacitance (C iss) is 679 pF, and the output capacitance (C oss) is 87 pF.

  9. In which package is the PMV48XPA2R available?

    The PMV48XPA2R is available in the SOT23 (TO-236AB) package.

  10. What are some common applications of the PMV48XPA2R?

    Common applications include automotive electronics, industrial power management, high-side load switching, high-speed line driving, and relay driving.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 8V
Rds On (Max) @ Id, Vgs:49mOhm @ 4A, 8V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:679 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):610mW (Ta), 8.3W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV48XPA2R PMV48XPAR
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 8V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 49mOhm @ 4A, 8V 55mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V 11 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 679 pF @ 10 V 1000 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 610mW (Ta), 8.3W (Tc) 510mW (Ta), 4.15W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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