PMV48XPA2R
  • Share:

Nexperia USA Inc. PMV48XPA2R

Manufacturer No:
PMV48XPA2R
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 4A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV48XPA2R is a 20 V, P-channel Trench MOSFET produced by Nexperia USA Inc. This automotive-qualified, enhancement mode Field-Effect Transistor (FET) is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD). The device is designed to offer high efficiency and reliability, making it suitable for a wide range of applications across various industries.

Key Specifications

Parameter Value
Type Number PMV48XPA2
Package SOT23 (TO-236AB)
Channel Type P-channel
V DS [max] (V) -20
R DSon [max] @ V GS = 4.5 V; @25 C (mΩ) 55
T j [max] (°C) 175
I D [max] (A) -4
Q GD [typ] (nC) 2.3
Q G(tot) [typ] @ V GS = 4.5 V (nC) 7
P tot [max] (W) 2
V GSth [typ] (V) -0.95
Automotive Qualified Yes (AEC-Q101 qualified)
C iss [typ] (pF) 679
C oss [typ] (pF) 87

Key Features

  • Logic-level compatible
  • Trench MOSFET technology for high efficiency and fast switching
  • AEC-Q101 qualified for automotive applications
  • High-side load switch and high-speed line driver capabilities
  • Relay driver and switching circuits applications
  • Small SOT23 package for compact designs

Applications

  • Automotive electronics: e-mobility, safety, and efficiency improvements
  • Industrial applications: power miniaturization, system reliability, and energy efficiency
  • Power management: high-side load switching, high-speed line driving, and relay driving
  • Consumer and mobile devices: efficient power management and switching circuits
  • Wearables and computing: compact and efficient power solutions

Q & A

  1. What is the maximum drain-to-source voltage (V DS) of the PMV48XPA2R?

    The maximum drain-to-source voltage (V DS) is -20 V.

  2. What is the typical on-resistance (R DSon) at V GS = 4.5 V and 25°C?

    The typical on-resistance (R DSon) is 55 mΩ.

  3. Is the PMV48XPA2R automotive qualified?

    Yes, it is AEC-Q101 qualified.

  4. What is the maximum junction temperature (T j) of the PMV48XPA2R?

    The maximum junction temperature (T j) is 175°C.

  5. What are the typical gate-drain charge (Q GD) and total gate charge (Q G(tot)) values?

    The typical gate-drain charge (Q GD) is 2.3 nC, and the total gate charge (Q G(tot)) at V GS = 4.5 V is 7 nC.

  6. What is the maximum total power dissipation (P tot) of the PMV48XPA2R?

    The maximum total power dissipation (P tot) is 2 W.

  7. What is the typical threshold voltage (V GSth) of the PMV48XPA2R?

    The typical threshold voltage (V GSth) is -0.95 V.

  8. What are the typical input capacitance (C iss) and output capacitance (C oss) values?

    The typical input capacitance (C iss) is 679 pF, and the output capacitance (C oss) is 87 pF.

  9. In which package is the PMV48XPA2R available?

    The PMV48XPA2R is available in the SOT23 (TO-236AB) package.

  10. What are some common applications of the PMV48XPA2R?

    Common applications include automotive electronics, industrial power management, high-side load switching, high-speed line driving, and relay driving.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 8V
Rds On (Max) @ Id, Vgs:49mOhm @ 4A, 8V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:679 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):610mW (Ta), 8.3W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.39
85

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number PMV48XPA2R PMV48XPAR
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 8V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 49mOhm @ 4A, 8V 55mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V 11 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 679 pF @ 10 V 1000 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 610mW (Ta), 8.3W (Tc) 510mW (Ta), 4.15W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAS21J/ZLF
BAS21J/ZLF
Nexperia USA Inc.
DIODE GEN PURP 300V 250MA SC90
BZX384-B10,115
BZX384-B10,115
Nexperia USA Inc.
DIODE ZENER 10V 300MW SOD323
BZX84-C8V2/DG/B4R
BZX84-C8V2/DG/B4R
Nexperia USA Inc.
DIODE ZENER 8.2V 250MW TO236AB
PBSS4021NX,115
PBSS4021NX,115
Nexperia USA Inc.
TRANS NPN 20V 7A SOT89
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
PMPB20ENZ
PMPB20ENZ
Nexperia USA Inc.
MOSFET N-CH 30V 7.2A DFN2020MD-6
74HCT125DB,118
74HCT125DB,118
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 14SSOP
HEF4020BT,653
HEF4020BT,653
Nexperia USA Inc.
IC COUNTER BINARY 14STAGE 16SOIC
74AUP1G04GM,132
74AUP1G04GM,132
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 6XSON
74HCT14D-Q100,118
74HCT14D-Q100,118
Nexperia USA Inc.
IC INVERT SCHMITT 6CH 1-INP 14SO
74AHC573D,118
74AHC573D,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20SOIC
74LVC373ADB112
74LVC373ADB112
Nexperia USA Inc.
NOW NEXPERIA 74LVC373ADB - BUS D