PMV48XPAR
  • Share:

Nexperia USA Inc. PMV48XPAR

Manufacturer No:
PMV48XPAR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 3.5A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV48XPAR is a P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component is designed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench technology. It is well-suited for a variety of applications requiring low on-state resistance and high switching performance.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
ID (Continuous Drain Current)3.5 A
RDS(on) (On-State Resistance)Typically 44 mΩ at VGS = -4.5 V
VGS(th) (Threshold Voltage)Typically -1.5 V to -3.5 V
Ptot (Total Power Dissipation)1.25 W
TJ (Junction Temperature)-55°C to 150°C
PackageSOT23 (TO-236AB)

Key Features

  • Low on-state resistance (RDS(on)) for reduced power losses.
  • High switching performance due to the Trench technology.
  • Compact SOT23 package for space-efficient designs.
  • Enhancement mode operation for easy control.
  • Wide operating temperature range (-55°C to 150°C).

Applications

  • Power management in portable electronics.
  • Switching circuits in automotive systems.
  • Audio amplifiers and other consumer electronics.
  • Industrial control and automation systems.
  • Battery management systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMV48XPAR? The maximum drain-source voltage is 20 V.
  2. What is the continuous drain current (ID) rating of the PMV48XPAR? The continuous drain current rating is 3.5 A.
  3. What is the typical on-state resistance (RDS(on)) of the PMV48XPAR? The typical on-state resistance is 44 mΩ at VGS = -4.5 V.
  4. What is the threshold voltage (VGS(th)) range of the PMV48XPAR? The threshold voltage range is typically -1.5 V to -3.5 V.
  5. What is the total power dissipation (Ptot) of the PMV48XPAR? The total power dissipation is 1.25 W.
  6. What is the junction temperature (TJ) range of the PMV48XPAR? The junction temperature range is -55°C to 150°C.
  7. In what package is the PMV48XPAR available? The PMV48XPAR is available in the SOT23 (TO-236AB) package.
  8. What technology is used in the PMV48XPAR? The PMV48XPAR uses Trench technology.
  9. What are some common applications of the PMV48XPAR? Common applications include power management in portable electronics, switching circuits in automotive systems, audio amplifiers, industrial control systems, and battery management systems.
  10. Where can I purchase the PMV48XPAR? The PMV48XPAR can be purchased from various distributors such as Digi-Key, Mouser Electronics, and Avnet.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:55mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):510mW (Ta), 4.15W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.51
30

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMV48XPAR PMV48XPA2R
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 8V
Rds On (Max) @ Id, Vgs 55mOhm @ 2.4A, 4.5V 49mOhm @ 4A, 8V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V 10 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 10 V 679 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 510mW (Ta), 4.15W (Tc) 610mW (Ta), 8.3W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK

Related Product By Brand

BAT854CW,115
BAT854CW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
PMEG2010BEA,115
PMEG2010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
PUMD10/ZLF
PUMD10/ZLF
Nexperia USA Inc.
TRANS PREBIAS
PBSS5350X,135
PBSS5350X,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
BC857-QR
BC857-QR
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
PCMF3USB30Z
PCMF3USB30Z
Nexperia USA Inc.
CMC 6LN SMD ESD
74HCT4051PW,112
74HCT4051PW,112
Nexperia USA Inc.
IC MUX/DEMUX 8X1 16TSSOP
HEF4013BTT-Q100J
HEF4013BTT-Q100J
Nexperia USA Inc.
IC FF D-TYPE DUAL 1BIT 14TSSOP
74HC2G08DP,125
74HC2G08DP,125
Nexperia USA Inc.
IC GATE AND 2CH 2-INP 8TSSOP
74LVC1G11GW,125
74LVC1G11GW,125
Nexperia USA Inc.
IC GATE AND 1CH 3-INP 6TSSOP
74HCT14D-Q100,118
74HCT14D-Q100,118
Nexperia USA Inc.
IC INVERT SCHMITT 6CH 1-INP 14SO