Overview
The BUK9Y14-80E,115 is a logic level N-channel MOSFET produced by Nexperia USA Inc. This component utilizes TrenchMOS technology and is packaged in an LFPAK56 (Power SO8) package. It is designed to offer high performance and reliability, making it suitable for various applications, particularly in the automotive sector where it is automotive qualified.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 80 V |
| RDS(on) (Drain-Source On-Resistance) | 15 mΩ |
| VGS(th) (Gate-Source Threshold Voltage) | 1 - 2 V |
| ID (Continuous Drain Current) | 60 A |
| Ptot (Total Power Dissipation) | 200 W |
| Tj (Junction Temperature) | -55 to 150 °C |
| Package | LFPAK56 (Power SO8) |
Key Features
- Logic level gate drive for easy interface with microcontrollers and other logic circuits.
- TrenchMOS technology for low on-resistance and high efficiency.
- Automotive qualified, making it suitable for use in automotive applications.
- LFPAK56 (Power SO8) package for high power density and thermal performance.
- High continuous drain current of 60 A.
Applications
- Automotive systems: Suitable for various automotive applications due to its automotive qualification.
- Power management: Used in power management circuits requiring high efficiency and low on-resistance.
- Industrial control: Applicable in industrial control systems where high reliability and performance are needed.
- Consumer electronics: Can be used in consumer electronics that require efficient power switching.
Q & A
- What is the drain-source voltage rating of the BUK9Y14-80E,115 MOSFET?
The drain-source voltage rating is 80 V. - What is the on-resistance of the BUK9Y14-80E,115 MOSFET?
The on-resistance is 15 mΩ. - What is the gate-source threshold voltage range of the BUK9Y14-80E,115 MOSFET?
The gate-source threshold voltage range is 1 - 2 V. - What is the continuous drain current of the BUK9Y14-80E,115 MOSFET?
The continuous drain current is 60 A. - What package type is used for the BUK9Y14-80E,115 MOSFET?
The package type is LFPAK56 (Power SO8). - Is the BUK9Y14-80E,115 MOSFET automotive qualified?
Yes, it is automotive qualified. - What technology is used in the BUK9Y14-80E,115 MOSFET?
The BUK9Y14-80E,115 uses TrenchMOS technology. - What is the total power dissipation of the BUK9Y14-80E,115 MOSFET?
The total power dissipation is 200 W. - What is the junction temperature range of the BUK9Y14-80E,115 MOSFET?
The junction temperature range is -55 to 150 °C. - In which sectors can the BUK9Y14-80E,115 MOSFET be applied?
The BUK9Y14-80E,115 can be applied in automotive, power management, industrial control, and consumer electronics sectors.
