IRLML6344TRPBF
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Infineon Technologies IRLML6344TRPBF

Manufacturer No:
IRLML6344TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 5A MICRO3/SOT23
Delivery:
Payment:
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Product Introduction

Overview

The IRLML6344TRPBF is a 30V single N-channel StrongIRFET™ power MOSFET produced by Infineon Technologies. This device is part of the StrongIRFET™ family, which is optimized for low RDS(on) and high current capability, making it ideal for low frequency applications that require performance and ruggedness. The MOSFET is packaged in a standard SOT-23-3 package, ensuring industry-standard compatibility and ease of use in various applications.

Key Specifications

Parameter Units Min. Typ. Max.
VDS (Drain-Source Voltage) V - - 30
VGS (Gate-to-Source Voltage) V - - ±12
ID (Continuous Drain Current at TA = 25°C) A - - 5.0
ID (Continuous Drain Current at TA = 70°C) A - - 4.0
RDS(on) (at VGS = 4.5V) - - 29
RDS(on) (at VGS = 2.5V) - - 37
VGS(th) (Gate Threshold Voltage) V 0.5 0.8 1.1
TJ (Junction Temperature Range) °C -55 - 150
RθJA (Junction-to-Ambient Thermal Resistance) °C/W - - 100

Key Features

  • Industry standard surface-mount power package (SOT-23-3)
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below 100 kHz
  • Softer body-diode compared to previous silicon generation
  • Standard pinout allows for drop-in replacement
  • High performance in low frequency applications
  • Increased power density
  • RoHS compliant, containing no lead, no bromide, and no halogen

Applications

  • Battery protection
  • Switch Mode Power Supplies (SMPS)
  • DC switch
  • Load switch
  • DC motors
  • Battery management systems
  • Inverters
  • DC-DC converters

Q & A

  1. What is the maximum drain-source voltage (VDS) of the IRLML6344TRPBF?

    The maximum drain-source voltage (VDS) is 30V.

  2. What is the typical RDS(on) at VGS = 4.5V?

    The typical RDS(on) at VGS = 4.5V is 29 mΩ.

  3. What is the continuous drain current at TA = 25°C?

    The continuous drain current at TA = 25°C is 5.0 A.

  4. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is from 0.5V to 1.1V.

  5. Is the IRLML6344TRPBF RoHS compliant?
  6. What are the typical applications of the IRLML6344TRPBF?

    The typical applications include battery protection, SMPS, DC switch, load switch, DC motors, battery management systems, inverters, and DC-DC converters.

  7. What is the junction temperature range for the IRLML6344TRPBF?

    The junction temperature range is from -55°C to 150°C.

  8. What is the thermal resistance (RθJA) of the IRLML6344TRPBF?

    The thermal resistance (RθJA) is 100 °C/W.

  9. Is the IRLML6344TRPBF qualified according to JEDEC standards?
  10. What package type is the IRLML6344TRPBF available in?

    The IRLML6344TRPBF is available in a SOT-23-3 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:29mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:6.8 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro3™/SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number IRLML6344TRPBF IRLML6346TRPBF IRLML6244TRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta) 3.4A (Ta) 6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 29mOhm @ 5A, 4.5V 63mOhm @ 3.4A, 4.5V 21mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10µA 1.1V @ 10µA 1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 4.5 V 2.9 nC @ 4.5 V 8.9 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 25 V 270 pF @ 24 V 700 pF @ 16 V
FET Feature - - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package Micro3™/SOT-23 Micro3™/SOT-23 Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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