IRLML6344TRPBF
  • Share:

Infineon Technologies IRLML6344TRPBF

Manufacturer No:
IRLML6344TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 5A MICRO3/SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRLML6344TRPBF is a 30V single N-channel StrongIRFET™ power MOSFET produced by Infineon Technologies. This device is part of the StrongIRFET™ family, which is optimized for low RDS(on) and high current capability, making it ideal for low frequency applications that require performance and ruggedness. The MOSFET is packaged in a standard SOT-23-3 package, ensuring industry-standard compatibility and ease of use in various applications.

Key Specifications

Parameter Units Min. Typ. Max.
VDS (Drain-Source Voltage) V - - 30
VGS (Gate-to-Source Voltage) V - - ±12
ID (Continuous Drain Current at TA = 25°C) A - - 5.0
ID (Continuous Drain Current at TA = 70°C) A - - 4.0
RDS(on) (at VGS = 4.5V) - - 29
RDS(on) (at VGS = 2.5V) - - 37
VGS(th) (Gate Threshold Voltage) V 0.5 0.8 1.1
TJ (Junction Temperature Range) °C -55 - 150
RθJA (Junction-to-Ambient Thermal Resistance) °C/W - - 100

Key Features

  • Industry standard surface-mount power package (SOT-23-3)
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below 100 kHz
  • Softer body-diode compared to previous silicon generation
  • Standard pinout allows for drop-in replacement
  • High performance in low frequency applications
  • Increased power density
  • RoHS compliant, containing no lead, no bromide, and no halogen

Applications

  • Battery protection
  • Switch Mode Power Supplies (SMPS)
  • DC switch
  • Load switch
  • DC motors
  • Battery management systems
  • Inverters
  • DC-DC converters

Q & A

  1. What is the maximum drain-source voltage (VDS) of the IRLML6344TRPBF?

    The maximum drain-source voltage (VDS) is 30V.

  2. What is the typical RDS(on) at VGS = 4.5V?

    The typical RDS(on) at VGS = 4.5V is 29 mΩ.

  3. What is the continuous drain current at TA = 25°C?

    The continuous drain current at TA = 25°C is 5.0 A.

  4. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is from 0.5V to 1.1V.

  5. Is the IRLML6344TRPBF RoHS compliant?
  6. What are the typical applications of the IRLML6344TRPBF?

    The typical applications include battery protection, SMPS, DC switch, load switch, DC motors, battery management systems, inverters, and DC-DC converters.

  7. What is the junction temperature range for the IRLML6344TRPBF?

    The junction temperature range is from -55°C to 150°C.

  8. What is the thermal resistance (RθJA) of the IRLML6344TRPBF?

    The thermal resistance (RθJA) is 100 °C/W.

  9. Is the IRLML6344TRPBF qualified according to JEDEC standards?
  10. What package type is the IRLML6344TRPBF available in?

    The IRLML6344TRPBF is available in a SOT-23-3 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:29mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:6.8 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro3™/SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.60
345

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRLML6344TRPBF IRLML6346TRPBF IRLML6244TRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta) 3.4A (Ta) 6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 29mOhm @ 5A, 4.5V 63mOhm @ 3.4A, 4.5V 21mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10µA 1.1V @ 10µA 1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 4.5 V 2.9 nC @ 4.5 V 8.9 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 25 V 270 pF @ 24 V 700 pF @ 16 V
FET Feature - - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package Micro3™/SOT-23 Micro3™/SOT-23 Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

BAS7005WH6327XTSA1
BAS7005WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BAS4005E6327HTSA1
BAS4005E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS 70-04 B5003
BAS 70-04 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BCP54-16E6433
BCP54-16E6433
Infineon Technologies
TRANS NPN 45V 1A SOT223
MMBT3906LT1
MMBT3906LT1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23-3
BC858BE6433HTMA1
BC858BE6433HTMA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
BC 807-16 E6327
BC 807-16 E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT-23
BC 846B E6433
BC 846B E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
BC817K25WE6327HTSA1
BC817K25WE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
IRF7240TRPBF
IRF7240TRPBF
Infineon Technologies
MOSFET P-CH 40V 10.5A 8SO
SPP20N60C3HKSA1
SPP20N60C3HKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
IKW50N60T
IKW50N60T
Infineon Technologies
IKW50N60 - DISCRETE IGBT WITH AN