IRF5210STRLPBF
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Infineon Technologies IRF5210STRLPBF

Manufacturer No:
IRF5210STRLPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 38A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF5210STRLPBF is a single P-Channel power MOSFET produced by Infineon Technologies. This device is housed in the industry-standard D2PAK package, which is optimized for high-current carrying capability and wave soldering. The IRF5210STRLPBF is designed with a planar cell structure, providing a wide Safe Operating Area (SOA) and making it suitable for a variety of applications requiring reliable and efficient power switching.

Key Specifications

ParameterMin.Typ.Max.Units
Drain-to-Source Breakdown Voltage (VBRDSS)-100--V
Continuous Drain Current (ID) at TC = 25°C-38--A
Pulsed Drain Current (IDM)-140--A
Maximum Power Dissipation (PD) at TA = 25°C--170W
Gate-to-Source Voltage (VGS)-20-20V
Static Drain-to-Source On-Resistance (RDS(on))--60
Gate Threshold Voltage (VGS(th))-2.0--4.0V
Operating Junction Temperature (TJ)-55-150°C
Storage Temperature Range (TSTG)-55-150°C

Key Features

  • Planar Cell Structure: Provides a wide Safe Operating Area (SOA) for reliable operation.
  • High-Current Capability: Up to 38 A continuous drain current and 140 A pulsed drain current.
  • Low On-Resistance: Static drain-to-source on-resistance of up to 60 mΩ.
  • Fast Switching: Fast turn-on and turn-off times with low switching losses.
  • Repetitive Avalanche Rating: Allowed up to Tjmax for robustness in demanding applications.
  • Industry Standard Package: D2PAK package, suitable for wave soldering and high-current applications.

Applications

The IRF5210STRLPBF is suitable for a wide range of applications, including:

  • Power Supplies: DC-DC converters, switching power supplies, and power management systems.
  • Motor Control: Motor drives, servo motors, and other high-current motor applications.
  • Automotive Systems: Automotive power systems, battery management, and electric vehicle applications.
  • Industrial Automation: Control systems, power distribution, and industrial power management.

Q & A

  1. What is the maximum drain-to-source breakdown voltage of the IRF5210STRLPBF?
    The maximum drain-to-source breakdown voltage is -100 V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current rating at 25°C is -38 A.
  3. What is the typical on-resistance of the IRF5210STRLPBF?
    The typical static drain-to-source on-resistance is up to 60 mΩ.
  4. What is the operating junction temperature range of the IRF5210STRLPBF?
    The operating junction temperature range is -55°C to 150°C.
  5. Is the IRF5210STRLPBF suitable for wave soldering?
    Yes, the IRF5210STRLPBF is capable of being wave-soldered.
  6. What package type is used for the IRF5210STRLPBF?
    The IRF5210STRLPBF is housed in a D2PAK package.
  7. What are the key benefits of the planar cell structure in the IRF5210STRLPBF?
    The planar cell structure provides a wide Safe Operating Area (SOA) and enhances the device's reliability and efficiency.
  8. Can the IRF5210STRLPBF handle repetitive avalanche conditions?
    Yes, the IRF5210STRLPBF is designed to handle repetitive avalanche conditions up to Tjmax.
  9. What are some common applications for the IRF5210STRLPBF?
    Common applications include power supplies, motor control, automotive systems, and industrial automation.
  10. Where can I find detailed specifications and datasheets for the IRF5210STRLPBF?
    Detailed specifications and datasheets can be found on the Infineon Technologies website, as well as through distributors like Mouser and RS Components.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:230 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2780 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRF5210STRLPBF IRF5210STRRPBF IRF510STRLPBF
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix
Product Status Active Last Time Buy Active
FET Type P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc) 38A (Tc) 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 38A, 10V 60mOhm @ 38A, 10V 540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V 230 nC @ 10 V 8.3 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 25 V 2780 pF @ 25 V 180 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 170W (Tc) 3.1W (Ta), 170W (Tc) 43W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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