IRF5210SPBF
  • Share:

Infineon Technologies IRF5210SPBF

Manufacturer No:
IRF5210SPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET P-CH 100V 38A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF5210SPBF is a P-Channel Power MOSFET produced by Infineon Technologies. It is part of the HEXFET family, which utilizes advanced processing techniques to achieve extremely low on-resistance and high performance. This device is packaged in a TO-220AB package, which is an industry standard through-hole power package, facilitating ease of design and integration into various applications.

The IRF5210SPBF is optimized for applications switching below 100 kHz and is suitable for a wide range of uses, including DC motors, inverters, Switch-Mode Power Supplies (SMPS), lighting, load switches, and battery-powered applications.

Key Specifications

Parameter Units Min. Typ. Max.
ID @ TC = 25°C (Continuous Drain Current, VGS @ -10V) A - - -38
ID @ TC = 100°C (Continuous Drain Current, VGS @ -10V) A - - -24
IDM (Pulsed Drain Current) A - - -140
PD @ TA = 25°C (Maximum Power Dissipation) W - - 120
VGS (Gate-to-Source Voltage) V - - -20
V(BR)DSS (Drain-to-Source Breakdown Voltage) V -100 - -
TJ (Operating Junction Temperature) °C -55 - 150
RθJC (Junction-to-Case Thermal Resistance) °C/W - 0.75 -
RθJA (Junction-to-Ambient Thermal Resistance, PCB Mount, steady state) °C/W - 40 -

Key Features

  • Planar Cell Structure: Offers a wide Safe Operating Area (SOA).
  • Advanced Process Technology: Utilizes fifth-generation HEXFET technology for extremely low on-resistance and high performance.
  • High Current Rating: Supports high continuous and pulsed drain currents, making it suitable for demanding applications.
  • Industry Standard Package: Available in the TO-220AB package, which is widely recognized and used in the industry.
  • Repetitive Avalanche Allowed: The device can handle repetitive avalanche events up to the maximum junction temperature, enhancing reliability.
  • Fast Switching Speed: Optimized for fast switching applications, contributing to efficient operation in various power management scenarios.
  • High Junction Operating Temperature: Can operate up to 150°C, making it suitable for high-temperature environments).

Applications

  • DC Motors: Suitable for motor control and drive applications due to its high current handling and low on-resistance).
  • Inverters and SMPS: Used in switch-mode power supplies and inverter circuits where high efficiency and reliability are crucial).
  • Lighting and Load Switches: Ideal for lighting control and load switching applications where fast switching and high current capability are required).
  • Battery-Powered Applications: Suitable for battery-powered devices due to its low on-resistance and high efficiency).

Q & A

  1. What is the maximum drain-to-source breakdown voltage of the IRF5210SPBF?

    The maximum drain-to-source breakdown voltage is -100V).

  2. What is the continuous drain current rating at 25°C and 100°C?

    The continuous drain current rating is -38A at 25°C and -24A at 100°C).

  3. What is the maximum power dissipation at 25°C?

    The maximum power dissipation at 25°C is 120W).

  4. What is the operating junction temperature range of the IRF5210SPBF?

    The operating junction temperature range is from -55°C to 150°C).

  5. What type of package is the IRF5210SPBF available in?

    The IRF5210SPBF is available in the TO-220AB package).

  6. Is the IRF5210SPBF suitable for high-frequency applications?

    No, it is optimized for applications switching below 100 kHz).

  7. What are the key benefits of using the IRF5210SPBF?

    The key benefits include increased ruggedness, wide availability, industry standard qualification, high performance in low frequency applications, and high current capability).

  8. Can the IRF5210SPBF handle repetitive avalanche events?

    Yes, it can handle repetitive avalanche events up to the maximum junction temperature).

  9. What is the thermal resistance from junction to case for the IRF5210SPBF?

    The thermal resistance from junction to case is 0.75°C/W).

  10. What are some common applications for the IRF5210SPBF?

    Common applications include DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:230 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2780 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
130

Please send RFQ , we will respond immediately.

Same Series
IRF5210LPBF
IRF5210LPBF
MOSFET P-CH 100V 38A TO262
IRF5210STRRPBF
IRF5210STRRPBF
MOSFET P-CH 100V 38A D2PAK
IRF5210SPBF
IRF5210SPBF
MOSFET P-CH 100V 38A D2PAK

Similar Products

Part Number IRF5210SPBF IRF510SPBF IRF520SPBF IRF5210LPBF IRF5210PBF
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Active Last Time Buy Active
FET Type P-Channel N-Channel N-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc) 5.6A (Tc) 9.2A (Tc) 38A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 38A, 10V 540mOhm @ 3.4A, 10V 270mOhm @ 5.5A, 10V 60mOhm @ 38A, 10V 60mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V 8.3 nC @ 10 V 16 nC @ 10 V 230 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 25 V 180 pF @ 25 V 360 pF @ 25 V 2780 pF @ 25 V 2700 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 3.1W (Ta), 170W (Tc) 3.7W (Ta), 43W (Tc) 3.7W (Ta), 60W (Tc) 3.1W (Ta), 170W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK D²PAK (TO-263) D2PAK TO-262 TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3

Related Product By Categories

STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP

Related Product By Brand

BAV 70S H6327
BAV 70S H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAV99E6327
BAV99E6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAV 70W E6433
BAV 70W E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BC846SE6433BTMA1
BC846SE6433BTMA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BFG135AE6327XT
BFG135AE6327XT
Infineon Technologies
RF TRANS NPN 15V 6GHZ SOT223-4
BC847C-B5000
BC847C-B5000
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BCV26E327
BCV26E327
Infineon Technologies
TRANS PNP DARL 30V 0.5A SOT23
BCX5316H6433XTMA1
BCX5316H6433XTMA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BCX5616E6433HTMA1
BCX5616E6433HTMA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BCX 55-16 E6327
BCX 55-16 E6327
Infineon Technologies
TRANS NPN 60V 1A SOT-89
TDA21470AUMA1
TDA21470AUMA1
Infineon Technologies
INT. POWERSTAGE/DRIVER
CYUSB3014-BZXI
CYUSB3014-BZXI
Infineon Technologies
IC ARM9 USB CONTROLLER 121FBGA