IRF5210STRRPBF
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Infineon Technologies IRF5210STRRPBF

Manufacturer No:
IRF5210STRRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 38A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF5210STRRPBF is a single P-Channel power MOSFET produced by Infineon Technologies. It is housed in a D2PAK package, which is an industry-standard surface-mount power package. This MOSFET is designed for applications requiring high current carrying capability and fast switching speeds. It is optimized for use in industrial markets and features a planar cell structure for a wide Safe Operating Area (SOA).

Key Specifications

Parameter Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage (VBRDSS) - - -100 V
Continuous Drain Current (ID) at TC = 25°C - - -38 A
Pulsed Drain Current (IDM) - - -140 A
Static Drain-to-Source On-Resistance (RDS(on)) - - 60 mΩ mΩ
Gate Threshold Voltage (VGS(th)) -2.0 - -4.0 V
Operating Junction Temperature (TJ) -55 - 150 °C
Maximum Power Dissipation (PD) at TA = 25°C - - 170 W

Key Features

  • Planar Cell Structure: Provides a wide Safe Operating Area (SOA).
  • Ultra Low On-Resistance: With a maximum RDS(on) of 60 mΩ, this MOSFET offers efficient switching.
  • Fast Switching Speed: Optimized for fast switching applications, making it suitable for high-frequency use.
  • Repetitive Avalanche Rating: Allowed up to Tjmax, enhancing reliability in demanding applications.
  • High Current Carrying Capability: Up to 38 A continuous drain current and 140 A pulsed drain current.
  • Industry Standard Package: D2PAK package, which is wave-solderable and suitable for surface-mount applications.
  • Lead-Free and RoHS Compliant: Ensuring environmental compliance and safety.

Applications

  • Industrial Power Supplies: Suitable for high-power switching applications in industrial power supplies due to its high current and fast switching capabilities.
  • Motor Control: Used in motor control circuits where high current and efficient switching are required.
  • Power Conversion: Ideal for power conversion applications such as DC-DC converters and inverters.
  • Automotive Systems: Can be used in automotive systems that require high reliability and efficient power management.

Q & A

  1. What is the maximum drain-to-source breakdown voltage of the IRF5210STRRPBF?

    The maximum drain-to-source breakdown voltage is -100 V.

  2. What is the continuous drain current rating of the IRF5210STRRPBF at 25°C?

    The continuous drain current rating is -38 A at 25°C.

  3. What is the maximum power dissipation of the IRF5210STRRPBF at 25°C?

    The maximum power dissipation is 170 W at 25°C.

  4. Is the IRF5210STRRPBF lead-free and RoHS compliant?

    Yes, the IRF5210STRRPBF is lead-free and RoHS compliant.

  5. What is the operating junction temperature range of the IRF5210STRRPBF?

    The operating junction temperature range is -55°C to 150°C.

  6. What package type is the IRF5210STRRPBF available in?

    The IRF5210STRRPBF is available in a D2PAK package.

  7. Is the IRF5210STRRPBF suitable for high-frequency applications?

    Yes, it is optimized for fast switching speeds, making it suitable for high-frequency applications.

  8. What is the maximum pulsed drain current rating of the IRF5210STRRPBF?

    The maximum pulsed drain current rating is -140 A.

  9. Does the IRF5210STRRPBF have a built-in diode?

    Yes, it has a built-in body diode.

  10. Is the IRF5210STRRPBF wave-solderable?

    Yes, the D2PAK package is wave-solderable.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:230 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2780 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRF5210STRRPBF IRF510STRRPBF IRF5210STRLPBF
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Last Time Buy Active Active
FET Type P-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc) 5.6A (Tc) 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 38A, 10V 540mOhm @ 3.4A, 10V 60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V 8.3 nC @ 10 V 230 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 25 V 180 pF @ 25 V 2780 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 170W (Tc) 3.7W (Ta), 43W (Tc) 3.1W (Ta), 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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