IRF5210STRRPBF
  • Share:

Infineon Technologies IRF5210STRRPBF

Manufacturer No:
IRF5210STRRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 38A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF5210STRRPBF is a single P-Channel power MOSFET produced by Infineon Technologies. It is housed in a D2PAK package, which is an industry-standard surface-mount power package. This MOSFET is designed for applications requiring high current carrying capability and fast switching speeds. It is optimized for use in industrial markets and features a planar cell structure for a wide Safe Operating Area (SOA).

Key Specifications

Parameter Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage (VBRDSS) - - -100 V
Continuous Drain Current (ID) at TC = 25°C - - -38 A
Pulsed Drain Current (IDM) - - -140 A
Static Drain-to-Source On-Resistance (RDS(on)) - - 60 mΩ
Gate Threshold Voltage (VGS(th)) -2.0 - -4.0 V
Operating Junction Temperature (TJ) -55 - 150 °C
Maximum Power Dissipation (PD) at TA = 25°C - - 170 W

Key Features

  • Planar Cell Structure: Provides a wide Safe Operating Area (SOA).
  • Ultra Low On-Resistance: With a maximum RDS(on) of 60 mΩ, this MOSFET offers efficient switching.
  • Fast Switching Speed: Optimized for fast switching applications, making it suitable for high-frequency use.
  • Repetitive Avalanche Rating: Allowed up to Tjmax, enhancing reliability in demanding applications.
  • High Current Carrying Capability: Up to 38 A continuous drain current and 140 A pulsed drain current.
  • Industry Standard Package: D2PAK package, which is wave-solderable and suitable for surface-mount applications.
  • Lead-Free and RoHS Compliant: Ensuring environmental compliance and safety.

Applications

  • Industrial Power Supplies: Suitable for high-power switching applications in industrial power supplies due to its high current and fast switching capabilities.
  • Motor Control: Used in motor control circuits where high current and efficient switching are required.
  • Power Conversion: Ideal for power conversion applications such as DC-DC converters and inverters.
  • Automotive Systems: Can be used in automotive systems that require high reliability and efficient power management.

Q & A

  1. What is the maximum drain-to-source breakdown voltage of the IRF5210STRRPBF?

    The maximum drain-to-source breakdown voltage is -100 V.

  2. What is the continuous drain current rating of the IRF5210STRRPBF at 25°C?

    The continuous drain current rating is -38 A at 25°C.

  3. What is the maximum power dissipation of the IRF5210STRRPBF at 25°C?

    The maximum power dissipation is 170 W at 25°C.

  4. Is the IRF5210STRRPBF lead-free and RoHS compliant?

    Yes, the IRF5210STRRPBF is lead-free and RoHS compliant.

  5. What is the operating junction temperature range of the IRF5210STRRPBF?

    The operating junction temperature range is -55°C to 150°C.

  6. What package type is the IRF5210STRRPBF available in?

    The IRF5210STRRPBF is available in a D2PAK package.

  7. Is the IRF5210STRRPBF suitable for high-frequency applications?

    Yes, it is optimized for fast switching speeds, making it suitable for high-frequency applications.

  8. What is the maximum pulsed drain current rating of the IRF5210STRRPBF?

    The maximum pulsed drain current rating is -140 A.

  9. Does the IRF5210STRRPBF have a built-in diode?

    Yes, it has a built-in body diode.

  10. Is the IRF5210STRRPBF wave-solderable?

    Yes, the D2PAK package is wave-solderable.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:230 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2780 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.94
75

Please send RFQ , we will respond immediately.

Same Series
IRF5210LPBF
IRF5210LPBF
MOSFET P-CH 100V 38A TO262
IRF5210STRRPBF
IRF5210STRRPBF
MOSFET P-CH 100V 38A D2PAK
IRF5210SPBF
IRF5210SPBF
MOSFET P-CH 100V 38A D2PAK

Similar Products

Part Number IRF5210STRRPBF IRF510STRRPBF IRF5210STRLPBF
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Last Time Buy Active Active
FET Type P-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc) 5.6A (Tc) 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 38A, 10V 540mOhm @ 3.4A, 10V 60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V 8.3 nC @ 10 V 230 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 25 V 180 pF @ 25 V 2780 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 170W (Tc) 3.7W (Ta), 43W (Tc) 3.1W (Ta), 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4

Related Product By Brand

BAW56WE6327
BAW56WE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS70-04E6327
BAS70-04E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BAS28E6359HTMA1
BAS28E6359HTMA1
Infineon Technologies
DIODE GP 80V 100MA SOT143
BC847SH6433XTMA1
BC847SH6433XTMA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BC80725WE6327BTSA1
BC80725WE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
BC857CWE6433HTMA1
BC857CWE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BCP 54-16 H6778
BCP 54-16 H6778
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
BSS84PWH6327XTSA1
BSS84PWH6327XTSA1
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
SPP20N60C3
SPP20N60C3
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 2
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
TLE72593GEXUMA3
TLE72593GEXUMA3
Infineon Technologies
IC TRANSCEIVER 1/1 DSO-8
BSP742RIXUMA1
BSP742RIXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 PDSO-8