IRF5210PBF
  • Share:

Infineon Technologies IRF5210PBF

Manufacturer No:
IRF5210PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET P-CH 100V 40A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF5210PBF is a -100V single P-Channel Power MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is available in the TO-220 package, an industry standard through-hole power package, making it easy to integrate into various designs. The device is optimized for applications switching below 100kHz and is known for its high-current rating and ruggedness.

Key Specifications

Parameter Units Min. Typ. Max.
Continuous Drain Current, ID @ TC = 25°C A - - -38
Continuous Drain Current, ID @ TC = 100°C A - - -23
Pulsed Drain Current, IDM A - - -140
Maximum Power Dissipation, PD @ TA = 25°C W - - 300
Gate-to-Source Voltage, VGS V - - -20
Drain-to-Source Breakdown Voltage, V(BR)DSS V -100 - -
Drain-to-Source On Resistance, RDS(on) Ω - 0.18 -
Operating Junction Temperature, TJ °C -55 - 150
Storage Temperature Range, TSTG °C -55 - 150

Key Features

  • Planar Cell Structure: Offers a wide Safe Operating Area (SOA).
  • Optimized for Broad Availability: Widely available from distribution partners.
  • Industry Standard Package: Available in TO-220 package, an industry standard through-hole power package.
  • High-Current Rating: Capable of handling high current levels.
  • Fast Switching Speed: Features fast switching speed and improved repetitive avalanche rating.
  • High Performance in Low Frequency Applications: Optimized for applications switching below 100kHz.
  • Increased Ruggedness: Enhanced ruggedness and reliability).
  • Ultra Low On-Resistance: Advanced process technology results in ultra-low on-resistance).
  • Lead-Free: Compliant with lead-free requirements).

Applications

  • DC Motors: Suitable for DC motor control applications).
  • Inverters: Used in inverter circuits for various power conversion applications).
  • Switch Mode Power Supplies (SMPS): Ideal for SMPS due to its high efficiency and reliability).
  • Lighting: Can be used in lighting control and dimming applications).
  • Load Switches: Suitable for load switch applications requiring high current handling).
  • Battery Powered Applications: Used in battery-powered devices due to its low on-resistance and high efficiency).

Q & A

  1. What is the maximum drain-to-source voltage of the IRF5210PBF?

    The maximum drain-to-source voltage (VDS) is -100V).

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) at 25°C is -38A).

  3. What is the maximum power dissipation at 25°C?

    The maximum power dissipation (PD) at 25°C is 300W).

  4. What is the operating junction temperature range?

    The operating junction temperature (TJ) range is from -55°C to 150°C).

  5. Is the IRF5210PBF lead-free?

    Yes, the IRF5210PBF is lead-free).

  6. What type of package is the IRF5210PBF available in?

    The IRF5210PBF is available in the TO-220 package).

  7. What are some typical applications of the IRF5210PBF?

    Typical applications include DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications).

  8. What is the drain-to-source on-resistance (RDS(on)) of the IRF5210PBF?

    The typical drain-to-source on-resistance (RDS(on)) is 0.18Ω).

  9. Does the IRF5210PBF support fast switching?

    Yes, the IRF5210PBF features fast switching speed and improved repetitive avalanche rating).

  10. Is the IRF5210PBF qualified according to industry standards?

    Yes, the IRF5210PBF is qualified according to JEDEC standards).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.84
222

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF5210PBF IRF5210SPBF IRF510PBF IRF520PBF IRF5210LPBF
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies
Product Status Active Discontinued at Digi-Key Active Active Last Time Buy
FET Type P-Channel P-Channel N-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 38A (Tc) 5.6A (Tc) 9.2A (Tc) 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 24A, 10V 60mOhm @ 38A, 10V 540mOhm @ 3.4A, 10V 270mOhm @ 5.5A, 10V 60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 230 nC @ 10 V 8.3 nC @ 10 V 16 nC @ 10 V 230 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V 2780 pF @ 25 V 180 pF @ 25 V 360 pF @ 25 V 2780 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 200W (Tc) 3.1W (Ta), 170W (Tc) 43W (Tc) 60W (Tc) 3.1W (Ta), 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB D2PAK TO-220AB TO-220AB TO-262
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4

Related Product By Brand

BAV199E6327HTSA1
BAV199E6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAV70UE6327HTSA1
BAV70UE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SC74-6
BAS16E6393HTSA1
BAS16E6393HTSA1
Infineon Technologies
DIODE GP 80V 250MA SOT23-3
BFG135AE6327XT
BFG135AE6327XT
Infineon Technologies
RF TRANS NPN 15V 6GHZ SOT223-4
BCX5516H6433XTMA1
BCX5516H6433XTMA1
Infineon Technologies
TRANS NPN 60V 1A SOT89
BC817K25WE6327HTSA1
BC817K25WE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BCP5416E6433HTMA1
BCP5416E6433HTMA1
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1
Infineon Technologies
MOSFET N-CH 80V 100A TDSON
BSC0702LSATMA1
BSC0702LSATMA1
Infineon Technologies
MOSFET N-CH 60V 100A SUPERSO8
SPP20N60C3HKSA1
SPP20N60C3HKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
SAK-TC1796-256F150EBE
SAK-TC1796-256F150EBE
Infineon Technologies
IC MCU 32BIT 2MB FLASH 416PBGA
CYUSB3014-BZXI
CYUSB3014-BZXI
Infineon Technologies
IC ARM9 USB CONTROLLER 121FBGA