IRF5210PBF
  • Share:

Infineon Technologies IRF5210PBF

Manufacturer No:
IRF5210PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET P-CH 100V 40A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF5210PBF is a -100V single P-Channel Power MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is available in the TO-220 package, an industry standard through-hole power package, making it easy to integrate into various designs. The device is optimized for applications switching below 100kHz and is known for its high-current rating and ruggedness.

Key Specifications

Parameter Units Min. Typ. Max.
Continuous Drain Current, ID @ TC = 25°C A - - -38
Continuous Drain Current, ID @ TC = 100°C A - - -23
Pulsed Drain Current, IDM A - - -140
Maximum Power Dissipation, PD @ TA = 25°C W - - 300
Gate-to-Source Voltage, VGS V - - -20
Drain-to-Source Breakdown Voltage, V(BR)DSS V -100 - -
Drain-to-Source On Resistance, RDS(on) Ω - 0.18 -
Operating Junction Temperature, TJ °C -55 - 150
Storage Temperature Range, TSTG °C -55 - 150

Key Features

  • Planar Cell Structure: Offers a wide Safe Operating Area (SOA).
  • Optimized for Broad Availability: Widely available from distribution partners.
  • Industry Standard Package: Available in TO-220 package, an industry standard through-hole power package.
  • High-Current Rating: Capable of handling high current levels.
  • Fast Switching Speed: Features fast switching speed and improved repetitive avalanche rating.
  • High Performance in Low Frequency Applications: Optimized for applications switching below 100kHz.
  • Increased Ruggedness: Enhanced ruggedness and reliability).
  • Ultra Low On-Resistance: Advanced process technology results in ultra-low on-resistance).
  • Lead-Free: Compliant with lead-free requirements).

Applications

  • DC Motors: Suitable for DC motor control applications).
  • Inverters: Used in inverter circuits for various power conversion applications).
  • Switch Mode Power Supplies (SMPS): Ideal for SMPS due to its high efficiency and reliability).
  • Lighting: Can be used in lighting control and dimming applications).
  • Load Switches: Suitable for load switch applications requiring high current handling).
  • Battery Powered Applications: Used in battery-powered devices due to its low on-resistance and high efficiency).

Q & A

  1. What is the maximum drain-to-source voltage of the IRF5210PBF?

    The maximum drain-to-source voltage (VDS) is -100V).

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) at 25°C is -38A).

  3. What is the maximum power dissipation at 25°C?

    The maximum power dissipation (PD) at 25°C is 300W).

  4. What is the operating junction temperature range?

    The operating junction temperature (TJ) range is from -55°C to 150°C).

  5. Is the IRF5210PBF lead-free?

    Yes, the IRF5210PBF is lead-free).

  6. What type of package is the IRF5210PBF available in?

    The IRF5210PBF is available in the TO-220 package).

  7. What are some typical applications of the IRF5210PBF?

    Typical applications include DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications).

  8. What is the drain-to-source on-resistance (RDS(on)) of the IRF5210PBF?

    The typical drain-to-source on-resistance (RDS(on)) is 0.18Ω).

  9. Does the IRF5210PBF support fast switching?

    Yes, the IRF5210PBF features fast switching speed and improved repetitive avalanche rating).

  10. Is the IRF5210PBF qualified according to industry standards?

    Yes, the IRF5210PBF is qualified according to JEDEC standards).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.84
222

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF5210PBF IRF5210SPBF IRF510PBF IRF520PBF IRF5210LPBF
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies
Product Status Active Discontinued at Digi-Key Active Active Last Time Buy
FET Type P-Channel P-Channel N-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 38A (Tc) 5.6A (Tc) 9.2A (Tc) 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 24A, 10V 60mOhm @ 38A, 10V 540mOhm @ 3.4A, 10V 270mOhm @ 5.5A, 10V 60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 230 nC @ 10 V 8.3 nC @ 10 V 16 nC @ 10 V 230 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V 2780 pF @ 25 V 180 pF @ 25 V 360 pF @ 25 V 2780 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 200W (Tc) 3.1W (Ta), 170W (Tc) 43W (Tc) 60W (Tc) 3.1W (Ta), 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB D2PAK TO-220AB TO-220AB TO-262
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

BAV199E6327HTSA1
BAV199E6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAV99SH6327XTSA1
BAV99SH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAV99E6327
BAV99E6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAS21UE6359HTMA1
BAS21UE6359HTMA1
Infineon Technologies
DIODE GP 200V 125MA SC74
BC847PNB6327XT
BC847PNB6327XT
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC 860B E6327
BC 860B E6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BCP53-10E6327
BCP53-10E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847BWE6433HTMA1
BC847BWE6433HTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1
Infineon Technologies
MOSFET N-CH 80V 100A TDSON
BSS138W E6327
BSS138W E6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
BTN8962TAAUMA1
BTN8962TAAUMA1
Infineon Technologies
IC MOTOR DRIVER PAR TO263-7
TLE73682EXUMA1
TLE73682EXUMA1
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36