IRF5210PBF
  • Share:

Infineon Technologies IRF5210PBF

Manufacturer No:
IRF5210PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET P-CH 100V 40A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF5210PBF is a -100V single P-Channel Power MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is available in the TO-220 package, an industry standard through-hole power package, making it easy to integrate into various designs. The device is optimized for applications switching below 100kHz and is known for its high-current rating and ruggedness.

Key Specifications

Parameter Units Min. Typ. Max.
Continuous Drain Current, ID @ TC = 25°C A - - -38
Continuous Drain Current, ID @ TC = 100°C A - - -23
Pulsed Drain Current, IDM A - - -140
Maximum Power Dissipation, PD @ TA = 25°C W - - 300
Gate-to-Source Voltage, VGS V - - -20
Drain-to-Source Breakdown Voltage, V(BR)DSS V -100 - -
Drain-to-Source On Resistance, RDS(on) Ω - 0.18 -
Operating Junction Temperature, TJ °C -55 - 150
Storage Temperature Range, TSTG °C -55 - 150

Key Features

  • Planar Cell Structure: Offers a wide Safe Operating Area (SOA).
  • Optimized for Broad Availability: Widely available from distribution partners.
  • Industry Standard Package: Available in TO-220 package, an industry standard through-hole power package.
  • High-Current Rating: Capable of handling high current levels.
  • Fast Switching Speed: Features fast switching speed and improved repetitive avalanche rating.
  • High Performance in Low Frequency Applications: Optimized for applications switching below 100kHz.
  • Increased Ruggedness: Enhanced ruggedness and reliability).
  • Ultra Low On-Resistance: Advanced process technology results in ultra-low on-resistance).
  • Lead-Free: Compliant with lead-free requirements).

Applications

  • DC Motors: Suitable for DC motor control applications).
  • Inverters: Used in inverter circuits for various power conversion applications).
  • Switch Mode Power Supplies (SMPS): Ideal for SMPS due to its high efficiency and reliability).
  • Lighting: Can be used in lighting control and dimming applications).
  • Load Switches: Suitable for load switch applications requiring high current handling).
  • Battery Powered Applications: Used in battery-powered devices due to its low on-resistance and high efficiency).

Q & A

  1. What is the maximum drain-to-source voltage of the IRF5210PBF?

    The maximum drain-to-source voltage (VDS) is -100V).

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) at 25°C is -38A).

  3. What is the maximum power dissipation at 25°C?

    The maximum power dissipation (PD) at 25°C is 300W).

  4. What is the operating junction temperature range?

    The operating junction temperature (TJ) range is from -55°C to 150°C).

  5. Is the IRF5210PBF lead-free?

    Yes, the IRF5210PBF is lead-free).

  6. What type of package is the IRF5210PBF available in?

    The IRF5210PBF is available in the TO-220 package).

  7. What are some typical applications of the IRF5210PBF?

    Typical applications include DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications).

  8. What is the drain-to-source on-resistance (RDS(on)) of the IRF5210PBF?

    The typical drain-to-source on-resistance (RDS(on)) is 0.18Ω).

  9. Does the IRF5210PBF support fast switching?

    Yes, the IRF5210PBF features fast switching speed and improved repetitive avalanche rating).

  10. Is the IRF5210PBF qualified according to industry standards?

    Yes, the IRF5210PBF is qualified according to JEDEC standards).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.84
222

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF5210PBF IRF5210SPBF IRF510PBF IRF520PBF IRF5210LPBF
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies
Product Status Active Discontinued at Digi-Key Active Active Last Time Buy
FET Type P-Channel P-Channel N-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 38A (Tc) 5.6A (Tc) 9.2A (Tc) 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 24A, 10V 60mOhm @ 38A, 10V 540mOhm @ 3.4A, 10V 270mOhm @ 5.5A, 10V 60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 230 nC @ 10 V 8.3 nC @ 10 V 16 nC @ 10 V 230 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V 2780 pF @ 25 V 180 pF @ 25 V 360 pF @ 25 V 2780 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 200W (Tc) 3.1W (Ta), 170W (Tc) 43W (Tc) 60W (Tc) 3.1W (Ta), 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB D2PAK TO-220AB TO-220AB TO-262
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

BAS2103WE6327HTSA1
BAS2103WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOD323
BAS16WE6327HTSA1
BAS16WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BFG135AE6327XT
BFG135AE6327XT
Infineon Technologies
RF TRANS NPN 15V 6GHZ SOT223-4
BC80740E6327
BC80740E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC 817-40 E6327
BC 817-40 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
IRF7410TRPBF
IRF7410TRPBF
Infineon Technologies
MOSFET P-CH 12V 16A 8SO
IRFR5305TRPBF
IRFR5305TRPBF
Infineon Technologies
MOSFET P-CH 55V 31A DPAK
BSS138WH6433XTMA1
BSS138WH6433XTMA1
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
IRS21867STRPBF
IRS21867STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
BTS50202EKAXUMA2
BTS50202EKAXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-14
BTS428L2XT
BTS428L2XT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
S34ML01G100TFI000
S34ML01G100TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I