IRF5210PBF
  • Share:

Infineon Technologies IRF5210PBF

Manufacturer No:
IRF5210PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET P-CH 100V 40A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF5210PBF is a -100V single P-Channel Power MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is available in the TO-220 package, an industry standard through-hole power package, making it easy to integrate into various designs. The device is optimized for applications switching below 100kHz and is known for its high-current rating and ruggedness.

Key Specifications

Parameter Units Min. Typ. Max.
Continuous Drain Current, ID @ TC = 25°C A - - -38
Continuous Drain Current, ID @ TC = 100°C A - - -23
Pulsed Drain Current, IDM A - - -140
Maximum Power Dissipation, PD @ TA = 25°C W - - 300
Gate-to-Source Voltage, VGS V - - -20
Drain-to-Source Breakdown Voltage, V(BR)DSS V -100 - -
Drain-to-Source On Resistance, RDS(on) Ω - 0.18 -
Operating Junction Temperature, TJ °C -55 - 150
Storage Temperature Range, TSTG °C -55 - 150

Key Features

  • Planar Cell Structure: Offers a wide Safe Operating Area (SOA).
  • Optimized for Broad Availability: Widely available from distribution partners.
  • Industry Standard Package: Available in TO-220 package, an industry standard through-hole power package.
  • High-Current Rating: Capable of handling high current levels.
  • Fast Switching Speed: Features fast switching speed and improved repetitive avalanche rating.
  • High Performance in Low Frequency Applications: Optimized for applications switching below 100kHz.
  • Increased Ruggedness: Enhanced ruggedness and reliability).
  • Ultra Low On-Resistance: Advanced process technology results in ultra-low on-resistance).
  • Lead-Free: Compliant with lead-free requirements).

Applications

  • DC Motors: Suitable for DC motor control applications).
  • Inverters: Used in inverter circuits for various power conversion applications).
  • Switch Mode Power Supplies (SMPS): Ideal for SMPS due to its high efficiency and reliability).
  • Lighting: Can be used in lighting control and dimming applications).
  • Load Switches: Suitable for load switch applications requiring high current handling).
  • Battery Powered Applications: Used in battery-powered devices due to its low on-resistance and high efficiency).

Q & A

  1. What is the maximum drain-to-source voltage of the IRF5210PBF?

    The maximum drain-to-source voltage (VDS) is -100V).

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) at 25°C is -38A).

  3. What is the maximum power dissipation at 25°C?

    The maximum power dissipation (PD) at 25°C is 300W).

  4. What is the operating junction temperature range?

    The operating junction temperature (TJ) range is from -55°C to 150°C).

  5. Is the IRF5210PBF lead-free?

    Yes, the IRF5210PBF is lead-free).

  6. What type of package is the IRF5210PBF available in?

    The IRF5210PBF is available in the TO-220 package).

  7. What are some typical applications of the IRF5210PBF?

    Typical applications include DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications).

  8. What is the drain-to-source on-resistance (RDS(on)) of the IRF5210PBF?

    The typical drain-to-source on-resistance (RDS(on)) is 0.18Ω).

  9. Does the IRF5210PBF support fast switching?

    Yes, the IRF5210PBF features fast switching speed and improved repetitive avalanche rating).

  10. Is the IRF5210PBF qualified according to industry standards?

    Yes, the IRF5210PBF is qualified according to JEDEC standards).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.84
222

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF5210PBF IRF5210SPBF IRF510PBF IRF520PBF IRF5210LPBF
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies
Product Status Active Discontinued at Digi-Key Active Active Last Time Buy
FET Type P-Channel P-Channel N-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 38A (Tc) 5.6A (Tc) 9.2A (Tc) 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 24A, 10V 60mOhm @ 38A, 10V 540mOhm @ 3.4A, 10V 270mOhm @ 5.5A, 10V 60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 230 nC @ 10 V 8.3 nC @ 10 V 16 nC @ 10 V 230 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V 2780 pF @ 25 V 180 pF @ 25 V 360 pF @ 25 V 2780 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 200W (Tc) 3.1W (Ta), 170W (Tc) 43W (Tc) 60W (Tc) 3.1W (Ta), 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB D2PAK TO-220AB TO-220AB TO-262
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

BAS21UE6327HTSA1
BAS21UE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 200V 250MA SC74-6
BAS40-07WH6327
BAS40-07WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS28E6359HTMA1
BAS28E6359HTMA1
Infineon Technologies
DIODE GP 80V 100MA SOT143
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC847BWE6327
BC847BWE6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT323-3
BCX5310E6327
BCX5310E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC858BW
BC858BW
Infineon Technologies
TRANS PNP 30V 0.1A SOT323
BCP 69US E6327
BCP 69US E6327
Infineon Technologies
TRANS PNP 20V 1A TSOP6-6
BCX 55-16 E6327
BCX 55-16 E6327
Infineon Technologies
TRANS NPN 60V 1A SOT-89
IRLML6402TRPBF-1
IRLML6402TRPBF-1
Infineon Technologies
MOSFET P-CH 20V 3.7A SOT23
FF600R12ME4PB72BPSA1
FF600R12ME4PB72BPSA1
Infineon Technologies
MEDIUM POWER ECONO
TLE6250G ITJKK
TLE6250G ITJKK
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8