2N7002H6327XTSA2
  • Share:

Infineon Technologies 2N7002H6327XTSA2

Manufacturer No:
2N7002H6327XTSA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002H6327XTSA2 is a small-signal N-channel MOSFET produced by Infineon Technologies. This transistor is part of the OptiMOS™ family, known for its high performance and reliability. It is designed in an enhanced mode and features logic-level gate drive, making it suitable for a wide range of applications. The device is packaged in a PG-SOT23 case, which is Pb-free, RoHS compliant, and halogen-free according to IEC61249-2-21 standards.

Key Specifications

ParameterValueUnit
Type of transistorN-MOSFET
TechnologyOptiMOS™
PolarisationUnipolar
Drain-source voltage60V
Drain current0.3A
Power dissipation0.5W
CasePG-SOT23
Gate-source voltage±20V
On-state resistance4 (VGS=4.5V), 3 (VGS=10V)Ω
MountingSMD
Kind of channelEnhanced
Gate threshold voltage1.5 - 2.5V
Operating and storage temperature-55 to 150°C

Key Features

  • Enhancement mode N-channel MOSFET
  • Logic level gate drive
  • Avalanche rated
  • Fast switching capabilities
  • Pb-free, RoHS compliant, and halogen-free packaging
  • Low on-state resistance (RDS(on))
  • High drain-source breakdown voltage (V(BR)DSS) of 60V
  • Low gate-source leakage current
  • ESD class JESD22-A114 (HBM) class 0 (<250V)

Applications

The 2N7002H6327XTSA2 is versatile and can be used in various applications, including:

  • General-purpose switching
  • Power management circuits
  • Audio and video switching
  • Motor control and drive circuits
  • Automotive and industrial control systems

Q & A

  1. What is the maximum drain-source voltage of the 2N7002H6327XTSA2?
    The maximum drain-source voltage is 60V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current rating at 25°C is 0.3A.
  3. What is the on-state resistance of the transistor?
    The on-state resistance is 4Ω at VGS=4.5V and 3Ω at VGS=10V.
  4. Is the 2N7002H6327XTSA2 RoHS compliant?
    Yes, the transistor is Pb-free, RoHS compliant, and halogen-free.
  5. What is the operating temperature range of the transistor?
    The operating and storage temperature range is -55 to 150°C.
  6. What is the gate threshold voltage range?
    The gate threshold voltage range is 1.5 to 2.5V.
  7. What are the typical applications of the 2N7002H6327XTSA2?
    Typical applications include general-purpose switching, power management circuits, audio and video switching, motor control, and automotive and industrial control systems.
  8. What is the maximum power dissipation of the transistor?
    The maximum power dissipation is 0.5W at 25°C.
  9. Is the transistor ESD protected?
    Yes, it has an ESD class JESD22-A114 (HBM) class 0 (<250V).
  10. What is the package type of the 2N7002H6327XTSA2?
    The package type is PG-SOT23.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.38
1,249

Please send RFQ , we will respond immediately.

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK

Related Product By Brand

BAT5404WH6327XTSA1
BAT5404WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT323
BAS70-06WE6327
BAS70-06WE6327
Infineon Technologies
SCHOTTKY DIODE
BAS7004SE6327HTSA1
BAS7004SE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT363
BAS16B5003
BAS16B5003
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BC817-16B5003
BC817-16B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23-3
BCX53-16E6433
BCX53-16E6433
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847BWH6433XTMA1
BC847BWH6433XTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCX5216H6327XTSA1
BCX5216H6327XTSA1
Infineon Technologies
TRANS PNP 60V 1A SOT89
BCX 56-10 E6327
BCX 56-10 E6327
Infineon Technologies
TRANS NPN 80V 1A SOT89
IRFP064NPBF
IRFP064NPBF
Infineon Technologies
MOSFET N-CH 55V 110A TO247AC
IPW65R080CFDFKSA1
IPW65R080CFDFKSA1
Infineon Technologies
MOSFET N-CH 700V 43.3A TO247-3
BSS123 E6433
BSS123 E6433
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3