2N7002H6327XTSA2
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Infineon Technologies 2N7002H6327XTSA2

Manufacturer No:
2N7002H6327XTSA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The 2N7002H6327XTSA2 is a small-signal N-channel MOSFET produced by Infineon Technologies. This transistor is part of the OptiMOS™ family, known for its high performance and reliability. It is designed in an enhanced mode and features logic-level gate drive, making it suitable for a wide range of applications. The device is packaged in a PG-SOT23 case, which is Pb-free, RoHS compliant, and halogen-free according to IEC61249-2-21 standards.

Key Specifications

ParameterValueUnit
Type of transistorN-MOSFET
TechnologyOptiMOS™
PolarisationUnipolar
Drain-source voltage60V
Drain current0.3A
Power dissipation0.5W
CasePG-SOT23
Gate-source voltage±20V
On-state resistance4 (VGS=4.5V), 3 (VGS=10V)Ω
MountingSMD
Kind of channelEnhanced
Gate threshold voltage1.5 - 2.5V
Operating and storage temperature-55 to 150°C

Key Features

  • Enhancement mode N-channel MOSFET
  • Logic level gate drive
  • Avalanche rated
  • Fast switching capabilities
  • Pb-free, RoHS compliant, and halogen-free packaging
  • Low on-state resistance (RDS(on))
  • High drain-source breakdown voltage (V(BR)DSS) of 60V
  • Low gate-source leakage current
  • ESD class JESD22-A114 (HBM) class 0 (<250V)

Applications

The 2N7002H6327XTSA2 is versatile and can be used in various applications, including:

  • General-purpose switching
  • Power management circuits
  • Audio and video switching
  • Motor control and drive circuits
  • Automotive and industrial control systems

Q & A

  1. What is the maximum drain-source voltage of the 2N7002H6327XTSA2?
    The maximum drain-source voltage is 60V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current rating at 25°C is 0.3A.
  3. What is the on-state resistance of the transistor?
    The on-state resistance is 4Ω at VGS=4.5V and 3Ω at VGS=10V.
  4. Is the 2N7002H6327XTSA2 RoHS compliant?
    Yes, the transistor is Pb-free, RoHS compliant, and halogen-free.
  5. What is the operating temperature range of the transistor?
    The operating and storage temperature range is -55 to 150°C.
  6. What is the gate threshold voltage range?
    The gate threshold voltage range is 1.5 to 2.5V.
  7. What are the typical applications of the 2N7002H6327XTSA2?
    Typical applications include general-purpose switching, power management circuits, audio and video switching, motor control, and automotive and industrial control systems.
  8. What is the maximum power dissipation of the transistor?
    The maximum power dissipation is 0.5W at 25°C.
  9. Is the transistor ESD protected?
    Yes, it has an ESD class JESD22-A114 (HBM) class 0 (<250V).
  10. What is the package type of the 2N7002H6327XTSA2?
    The package type is PG-SOT23.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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