Overview
The STW11NM80 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing their revolutionary MDmesh™ technology. This technology combines the multiple drain process with the company's PowerMESH™ horizontal layout, resulting in extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. The STW11NM80 is designed to offer superior dynamic performance compared to similar products on the market.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 800 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 11 | A |
| Pulsed Drain Current (IDM) | 44 | A |
| Maximum Power Dissipation (PTOT) at TC = 25 °C | 150 | W |
| Thermal Resistance Junction-Case (Rthj-case) | 0.83 | °C/W |
| Gate Charge (Qg) | 43.6 | nC |
| Drain-Source On-State Resistance (RDS(on)) | 0.4 | Ω |
| Rise Time (tr) | 17 | ns |
| Output Capacitance (Coss) | 750 | pF |
| Package | TO-247 |
Key Features
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)*Qg in the industry
- Extremely low on-resistance
- High dv/dt and excellent avalanche characteristics
- Utilizes ST's proprietary strip technique for superior dynamic performance
- Available in ECOPACK® packages for environmental compliance
Applications
The STW11NM80 is suitable for various switching applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drive systems
- High-frequency switching circuits
- Aerospace and industrial power systems
Q & A
- What is the maximum drain-source voltage (VDS) of the STW11NM80?
The maximum drain-source voltage (VDS) is 800 V.
- What is the maximum gate-source voltage (VGS) for the STW11NM80?
The maximum gate-source voltage (VGS) is ±30 V.
- What is the continuous drain current (ID) at TC = 25 °C for the STW11NM80?
The continuous drain current (ID) at TC = 25 °C is 11 A.
- What is the maximum power dissipation (PTOT) at TC = 25 °C for the STW11NM80?
The maximum power dissipation (PTOT) at TC = 25 °C is 150 W.
- What is the thermal resistance junction-case (Rthj-case) for the STW11NM80?
The thermal resistance junction-case (Rthj-case) is 0.83 °C/W.
- What is the gate charge (Qg) for the STW11NM80?
The gate charge (Qg) is 43.6 nC.
- What is the drain-source on-state resistance (RDS(on)) for the STW11NM80?
The drain-source on-state resistance (RDS(on)) is 0.4 Ω.
- What is the rise time (tr) for the STW11NM80?
The rise time (tr) is 17 ns.
- What is the output capacitance (Coss) for the STW11NM80?
The output capacitance (Coss) is 750 pF.
- In what package is the STW11NM80 available?
The STW11NM80 is available in the TO-247 package.
