Overview
The STW11NB80 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing the advanced PowerMESH™ technology. This device is designed to offer exceptional electrical and thermal performance, making it suitable for a wide range of high-power applications. The STW11NB80 features a low on-resistance (RDS(on)) of less than 0.8 Ω, a high drain-source voltage (VDS) rating of 800 V, and a continuous drain current (ID) of 11 A. These characteristics, combined with its high dv/dt capability and low intrinsic capacitances, make it an ideal choice for demanding power switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 800 | V |
| On-Resistance (RDS(on)) | < 0.8 | Ω |
| Continuous Drain Current (ID) | 11 | A |
| Pulsed Drain Current (IDM) | 44 | A |
| Gate-Source Voltage (VGS) | ±30 | V |
| Total Dissipation at TC = 25 °C (PTOT) | 150 | W |
| Thermal Resistance Junction-Case (Rthj-case) | 0.66 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-a) | 50 | °C/W |
| Operating Junction Temperature (TJ) | -65 to 150 | °C |
| Storage Temperature (Tstg) | -65 to 150 | °C |
Key Features
- Low on-resistance (RDS(on)) of less than 0.8 Ω, ensuring high efficiency in power switching applications.
- High drain-source voltage (VDS) rating of 800 V, providing robustness against voltage spikes.
- High continuous drain current (ID) of 11 A and pulsed current capability up to 44 A.
- Excellent avalanche characteristics and high dv/dt capability, making it suitable for inductive load switching.
- Low intrinsic capacitances and minimized gate charge, enhancing switching performance.
- 100% avalanche tested to ensure reliability in harsh operating conditions.
Applications
The STW11NB80 is designed for various high-power switching applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Uninterruptible Power Supplies (UPS) and power conditioning systems.
- Industrial and automotive power systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STW11NB80?
The maximum drain-source voltage (VDS) is 800 V. - What is the typical on-resistance (RDS(on)) of the STW11NB80?
The typical on-resistance (RDS(on)) is less than 0.8 Ω. - What is the continuous drain current (ID) rating of the STW11NB80?
The continuous drain current (ID) rating is 11 A. - What is the maximum pulsed drain current (IDM) of the STW11NB80?
The maximum pulsed drain current (IDM) is 44 A. - What is the gate-source voltage (VGS) range for the STW11NB80?
The gate-source voltage (VGS) range is ±30 V. - What is the thermal resistance junction-case (Rthj-case) of the STW11NB80?
The thermal resistance junction-case (Rthj-case) is 0.66 °C/W. - What are the operating and storage temperature ranges for the STW11NB80?
The operating junction temperature (TJ) range is -65 to 150 °C, and the storage temperature (Tstg) range is also -65 to 150 °C. - Is the STW11NB80 100% avalanche tested?
Yes, the STW11NB80 is 100% avalanche tested. - What are some typical applications for the STW11NB80?
Typical applications include power supplies, motor control systems, high-frequency switching circuits, UPS systems, and industrial and automotive power systems. - What technology is used in the STW11NB80?
The STW11NB80 uses STMicroelectronics' advanced PowerMESH™ technology.
