STP11NM80
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STMicroelectronics STP11NM80

Manufacturer No:
STP11NM80
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 11A TO220AB
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Product Introduction

Overview

The STP11NM80 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the revolutionary MDmesh™ technology. This technology combines the multiple drain process with ST's PowerMESH™ horizontal layout, resulting in extremely low on-resistance and excellent avalanche characteristics. The STP11NM80 is available in various packages, including TO-220, TO-220FP, D²PAK, and TO-247, making it versatile for different application needs. It is designed to offer superior dynamic performance compared to similar products in the market.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)800V
Gate-Source Voltage (VGS)±30V
Drain Current (continuous) at TC = 25 °C11A
Drain Current (continuous) at TC = 100 °C8A
Pulse Drain Current (IDM)44A
Total Dissipation at TC = 25 °C150W
On-Resistance (RDS(on))< 0.40Ω
RDS(on) * Qg14 Ω*nC
Thermal Resistance Junction-Case0.83°C/W
Operating Junction Temperature-65 to 150°C

Key Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • Best RDS(on) * Qg in the industry
  • Excellent avalanche characteristics
  • Superior dynamic performance due to ST's proprietary strip technique
  • Available in TO-220, TO-220FP, D²PAK, and TO-247 packages
  • ECOPACK® compliant for environmental sustainability

Applications

The STP11NM80 is primarily designed for switching applications, where its low on-resistance, high dv/dt, and excellent avalanche characteristics make it an ideal choice. These applications include but are not limited to power supplies, motor control, and high-frequency switching circuits.

Q & A

  1. What is the maximum drain-source voltage of the STP11NM80? The maximum drain-source voltage (VDS) is 800 V.
  2. What are the available packages for the STP11NM80? The STP11NM80 is available in TO-220, TO-220FP, D²PAK, and TO-247 packages.
  3. What is the continuous drain current at 25 °C? The continuous drain current at 25 °C is 11 A.
  4. What is the thermal resistance junction-case for the TO-220 package? The thermal resistance junction-case for the TO-220 package is 0.83 °C/W.
  5. What is the significance of MDmesh™ technology in the STP11NM80? The MDmesh™ technology combines the multiple drain process with ST's PowerMESH™ horizontal layout, resulting in extremely low on-resistance and excellent avalanche characteristics.
  6. What are the key features of the STP11NM80? Key features include low input capacitance and gate charge, low gate input resistance, best RDS(on) * Qg in the industry, and superior dynamic performance.
  7. What are the typical applications of the STP11NM80? The STP11NM80 is primarily used in switching applications such as power supplies, motor control, and high-frequency switching circuits.
  8. Is the STP11NM80 environmentally compliant? Yes, the STP11NM80 is available in ECOPACK® compliant packages, ensuring environmental sustainability.
  9. What is the maximum pulse drain current? The maximum pulse drain current (IDM) is 44 A.
  10. What is the operating junction temperature range? The operating junction temperature range is -65 to 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:43.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1630 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP11NM80 STP11NM60
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 5.5A, 10V 450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43.6 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1630 pF @ 25 V 1000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 160W (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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