STP11NM80
  • Share:

STMicroelectronics STP11NM80

Manufacturer No:
STP11NM80
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 11A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP11NM80 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the revolutionary MDmesh™ technology. This technology combines the multiple drain process with ST's PowerMESH™ horizontal layout, resulting in extremely low on-resistance and excellent avalanche characteristics. The STP11NM80 is available in various packages, including TO-220, TO-220FP, D²PAK, and TO-247, making it versatile for different application needs. It is designed to offer superior dynamic performance compared to similar products in the market.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)800V
Gate-Source Voltage (VGS)±30V
Drain Current (continuous) at TC = 25 °C11A
Drain Current (continuous) at TC = 100 °C8A
Pulse Drain Current (IDM)44A
Total Dissipation at TC = 25 °C150W
On-Resistance (RDS(on))< 0.40Ω
RDS(on) * Qg14 Ω*nC
Thermal Resistance Junction-Case0.83°C/W
Operating Junction Temperature-65 to 150°C

Key Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • Best RDS(on) * Qg in the industry
  • Excellent avalanche characteristics
  • Superior dynamic performance due to ST's proprietary strip technique
  • Available in TO-220, TO-220FP, D²PAK, and TO-247 packages
  • ECOPACK® compliant for environmental sustainability

Applications

The STP11NM80 is primarily designed for switching applications, where its low on-resistance, high dv/dt, and excellent avalanche characteristics make it an ideal choice. These applications include but are not limited to power supplies, motor control, and high-frequency switching circuits.

Q & A

  1. What is the maximum drain-source voltage of the STP11NM80? The maximum drain-source voltage (VDS) is 800 V.
  2. What are the available packages for the STP11NM80? The STP11NM80 is available in TO-220, TO-220FP, D²PAK, and TO-247 packages.
  3. What is the continuous drain current at 25 °C? The continuous drain current at 25 °C is 11 A.
  4. What is the thermal resistance junction-case for the TO-220 package? The thermal resistance junction-case for the TO-220 package is 0.83 °C/W.
  5. What is the significance of MDmesh™ technology in the STP11NM80? The MDmesh™ technology combines the multiple drain process with ST's PowerMESH™ horizontal layout, resulting in extremely low on-resistance and excellent avalanche characteristics.
  6. What are the key features of the STP11NM80? Key features include low input capacitance and gate charge, low gate input resistance, best RDS(on) * Qg in the industry, and superior dynamic performance.
  7. What are the typical applications of the STP11NM80? The STP11NM80 is primarily used in switching applications such as power supplies, motor control, and high-frequency switching circuits.
  8. Is the STP11NM80 environmentally compliant? Yes, the STP11NM80 is available in ECOPACK® compliant packages, ensuring environmental sustainability.
  9. What is the maximum pulse drain current? The maximum pulse drain current (IDM) is 44 A.
  10. What is the operating junction temperature range? The operating junction temperature range is -65 to 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:43.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1630 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$6.58
141

Please send RFQ , we will respond immediately.

Same Series
STW11NM80
STW11NM80
MOSFET N-CH 800V 11A TO247-3
STP11NM80
STP11NM80
MOSFET N-CH 800V 11A TO220AB
STI11NM80
STI11NM80
MOSFET N-CH 800V 11A I2PAK
STB11NM80T4
STB11NM80T4
MOSFET N-CH 800V 11A D2PAK

Similar Products

Part Number STP11NM80 STP11NM60
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 5.5A, 10V 450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43.6 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1630 pF @ 25 V 1000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 160W (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO

Related Product By Brand

STPS40M80CT
STPS40M80CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 80V TO220AB
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
STL6P3LLH6
STL6P3LLH6
STMicroelectronics
MOSFET P-CH 30V 6A POWERFLAT
STM32L412CBU6
STM32L412CBU6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 48UFQFPN
STM32L052R8H6
STM32L052R8H6
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64TFBGA
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
STM32L476VGT6U
STM32L476VGT6U
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STG3157CTR
STG3157CTR
STMicroelectronics
IC SWITCH SPDT SINGLE SOT323-6L
LM293N
LM293N
STMicroelectronics
IC COMPARATOR LP DUAL 8-DIP
M24C02-WMN6
M24C02-WMN6
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
VIPER122LSTR
VIPER122LSTR
STMicroelectronics
IC OFFLINE SW MULT TOP 10SSOP
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT