Overview
The STP11NM80 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the revolutionary MDmesh™ technology. This technology combines the multiple drain process with ST's PowerMESH™ horizontal layout, resulting in extremely low on-resistance and excellent avalanche characteristics. The STP11NM80 is available in various packages, including TO-220, TO-220FP, D²PAK, and TO-247, making it versatile for different application needs. It is designed to offer superior dynamic performance compared to similar products in the market.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDS) | 800 | V |
Gate-Source Voltage (VGS) | ±30 | V |
Drain Current (continuous) at TC = 25 °C | 11 | A |
Drain Current (continuous) at TC = 100 °C | 8 | A |
Pulse Drain Current (IDM) | 44 | A |
Total Dissipation at TC = 25 °C | 150 | W |
On-Resistance (RDS(on)) | < 0.40 | Ω |
RDS(on) * Qg | 14 Ω*nC | |
Thermal Resistance Junction-Case | 0.83 | °C/W |
Operating Junction Temperature | -65 to 150 | °C |
Key Features
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on) * Qg in the industry
- Excellent avalanche characteristics
- Superior dynamic performance due to ST's proprietary strip technique
- Available in TO-220, TO-220FP, D²PAK, and TO-247 packages
- ECOPACK® compliant for environmental sustainability
Applications
The STP11NM80 is primarily designed for switching applications, where its low on-resistance, high dv/dt, and excellent avalanche characteristics make it an ideal choice. These applications include but are not limited to power supplies, motor control, and high-frequency switching circuits.
Q & A
- What is the maximum drain-source voltage of the STP11NM80? The maximum drain-source voltage (VDS) is 800 V.
- What are the available packages for the STP11NM80? The STP11NM80 is available in TO-220, TO-220FP, D²PAK, and TO-247 packages.
- What is the continuous drain current at 25 °C? The continuous drain current at 25 °C is 11 A.
- What is the thermal resistance junction-case for the TO-220 package? The thermal resistance junction-case for the TO-220 package is 0.83 °C/W.
- What is the significance of MDmesh™ technology in the STP11NM80? The MDmesh™ technology combines the multiple drain process with ST's PowerMESH™ horizontal layout, resulting in extremely low on-resistance and excellent avalanche characteristics.
- What are the key features of the STP11NM80? Key features include low input capacitance and gate charge, low gate input resistance, best RDS(on) * Qg in the industry, and superior dynamic performance.
- What are the typical applications of the STP11NM80? The STP11NM80 is primarily used in switching applications such as power supplies, motor control, and high-frequency switching circuits.
- Is the STP11NM80 environmentally compliant? Yes, the STP11NM80 is available in ECOPACK® compliant packages, ensuring environmental sustainability.
- What is the maximum pulse drain current? The maximum pulse drain current (IDM) is 44 A.
- What is the operating junction temperature range? The operating junction temperature range is -65 to 150 °C.