Overview
The STB11NM80T4 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing their revolutionary MDmesh™ technology. This technology combines the multiple drain process with the company's PowerMESH™ horizontal layout, resulting in extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. The STB11NM80T4 is designed to offer superior dynamic performance compared to similar products on the market.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 800 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 11 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 8 | A |
| Pulsed Drain Current (IDM) | 44 | A |
| Total Dissipation at TC = 25 °C | 150 | W |
| Derating Factor | 1.2 W/°C | W/°C |
| Insulation Withstand Voltage (VISO) | 2500 | V |
| Operating Junction Temperature (TJ) | -65 to 150 | °C |
| Static Drain-Source On Resistance (RDS(on)) | < 0.40 Ω | Ω |
| RDS(on)*Qg | 14 Ω*nC | Ω*nC |
| Gate Threshold Voltage (VGS(th)) | 3 to 5 | V |
| Input Capacitance (Ciss) | 1630 pF | pF |
| Output Capacitance (Coss) | 750 pF | pF |
| Reverse Transfer Capacitance (Crss) | 30 pF | pF |
| Total Gate Charge (Qg) | 43.6 nC | nC |
Key Features
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)*Qg in the industry
- Extremely low on-resistance
- High dv/dt and excellent avalanche characteristics
- Superior dynamic performance due to ST's proprietary strip technique
- Available in various packages: D²PAK, TO-220FP, I²PAK, TO-220, TO-247
- ECOPACK® packages for environmental compliance
Applications
The STB11NM80T4 is suitable for various switching applications, including but not limited to:
- Power supplies and converters
- Motor control and drives
- High-frequency switching circuits
- Industrial and automotive systems requiring high reliability and performance
Q & A
- What is the maximum drain-source voltage (VDS) of the STB11NM80T4?
The maximum drain-source voltage (VDS) is 800 V.
- What is the continuous drain current (ID) at TC = 25 °C?
The continuous drain current (ID) at TC = 25 °C is 11 A.
- What is the static drain-source on resistance (RDS(on))?
The static drain-source on resistance (RDS(on)) is less than 0.40 Ω.
- What are the available packages for the STB11NM80T4?
The STB11NM80T4 is available in D²PAK, TO-220FP, I²PAK, TO-220, and TO-247 packages.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is from 3 to 5 V.
- What is the total gate charge (Qg)?
The total gate charge (Qg) is 43.6 nC.
- What are the thermal resistance values for the STB11NM80T4?
The thermal resistance junction-case (Rthj-case) is 0.83 °C/W, and the thermal resistance junction-ambient (Rthj-a) is 62.5 °C/W.
- What is the maximum operating junction temperature (TJ)?
The maximum operating junction temperature (TJ) is 150 °C.
- What are the typical applications for the STB11NM80T4?
The STB11NM80T4 is typically used in switching applications, including power supplies, motor control, and high-frequency switching circuits.
- Does the STB11NM80T4 come in environmentally compliant packages?
