Overview
The STB11NM60T4 and STP11NM60 are N-channel Power MOSFETs developed by STMicroelectronics using the second generation of MDmesh™ technology. These devices are designed to offer one of the world's lowest on-resistance and gate charge, making them highly suitable for the most demanding high-efficiency converters. Available in D²PAK and TO-220 packages, these MOSFETs are ideal for applications requiring high performance and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 600 | V |
| VGS (Gate-Source Voltage) | ±30 | V |
| ID (Continuous Drain Current at TC = 25°C) | 11 | A |
| ID (Continuous Drain Current at TC = 100°C) | 7 | A |
| IDM (Pulsed Drain Current) | 44 | A |
| RDS(on) (On-Resistance) | 0.45 Ω (max), 0.4 Ω (typ.) | Ω |
| PTOT (Total Dissipation at TC = 25°C) | 160 | W |
| Tj (Operating Junction Temperature Range) | -65 to 150 | °C |
| Tstg (Storage Temperature Range) | -65 to 150 | °C |
| Package | D²PAK (STB11NM60T4), TO-220 (STP11NM60) |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Vertical structure with strip layout for low on-resistance and gate charge
- High-efficiency performance suitable for demanding converters
- Available in ECOPACK® packages for environmental compliance
Applications
These MOSFETs are primarily used in switching applications, including high-efficiency converters where low on-resistance and gate charge are critical.
Q & A
- What is the maximum drain-source voltage (VDS) for the STB11NM60T4 and STP11NM60?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of these MOSFETs?
The typical on-resistance (RDS(on)) is 0.4 Ω.
- What are the package options available for these MOSFETs?
The STB11NM60T4 is available in D²PAK, and the STP11NM60 is available in TO-220.
- What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 11 A.
- What is the thermal resistance junction-case (Rthj-case) for the D²PAK package?
The thermal resistance junction-case (Rthj-case) for the D²PAK package is 0.78 °C/W.
- Are these MOSFETs 100% avalanche tested?
Yes, these MOSFETs are 100% avalanche tested.
- What is the typical gate-source charge (Qgs)?
The typical gate-source charge (Qgs) is 10 nC.
- What is the reverse recovery time (trr) for the source-drain diode?
The reverse recovery time (trr) for the source-drain diode is 390 ns at Tj = 25°C and 570 ns at Tj = 150°C.
- What are the primary applications for these MOSFETs?
These MOSFETs are primarily used in switching applications, including high-efficiency converters.
- Do these MOSFETs come in environmentally compliant packages?
Yes, these MOSFETs are available in ECOPACK® packages, which meet various environmental compliance standards.
